STTH152

STTH152 ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr(max) 32 ns c u d FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature ■ ■ e t le ■ o s b O - The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ) s ( ct u d o o r P DO-15 STTH152 ■ DESCRIPTION ) s t( ABSOLUTE RATINGS (limiting values) Symbol VRRM IFSM bs O Parameter Repetitive peak reverse voltage t e l o IF(AV) Tstg r P e Tj Value 200 Unit V Average forward current TI = 115°C δ = 0.5 1.5 A Surge non repetitive forward current tp=10 ms Sinusoidal 80 A -65 +175 °C 175 °C Storage temperature range Maximum operating junction temperature THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient* Value Unit 45 °C/W * On infinite heatsink with 10mm lead length. November 2001 - Ed:1A 1/5 STTH152 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions IR * Reverse leakage current Min. Typ. VR = VRRM Tj = 25°C 2 Tj = 125°C VF ** Forward voltage drop Unit 1.5 µA 40 0.95 IF = 1.5A Tj = 25°C Max. 0.66 Tj = 125°C V 0.75 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.10 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr Parameter Tests conditions Reverse recovery IF = 1A dIF/dt = -50A/µs time VR = 30V Forward recovery I = 1.5A dI /dt = 50A/µs F F time VFR = 1.1 x VFmax Forward recovery voltage so tfr VFP ) s ( ct u d o r P e t e l o s b O 2/5 e t le Tj = 25°C b O - o r P c u d Min. Typ. ) s t( Max. Unit 32 ns Tj = 25°C 50 ns Tj = 25°C 1.8 V STTH152 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) IF(av)(A) 1.6 δ = 0.1 1.8 δ = 0.2 δ = 0.5 δ = 0.05 1.4 1.6 Rth(j-a)=Rth(j-l) 1.4 1.2 δ=1 1.0 1.2 1.0 0.8 0.8 0.6 Rth(j-a)=100°C:W 0.6 0.4 T 0.4 0.2 0.2 IF(av)(A) δ=tp/T 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 Tamb(°C) 0.0 0 1.8 25 50 75 1.0 Rth(j-a) 100 0.9 90 0.8 e t le 0.6 Rth(j-l) 175 ) s t( o r P o s b O 0.7 60 150 c u d Zth(j-a)/Rth(j-a) Rth(°C/W) 110 70 125 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm). Fig. 3: Thermal resistance versus lead length. 80 100 δ = 0.5 0.5 50 0.4 40 ) s ( ct 30 20 10 Lleads(mm) 0 5 10 15 o r P e du 20 0.3 0.2 0.1 25 t e l o IFM(A) s b O T δ = 0.1 tp(s) Single pulse δ=tp/T 0.0 Fig. 5: Forward voltage drop versus forward current. 100.0 δ = 0.2 1.E-01 1.E+00 1.E+01 1.E+02 tp 1.E+03 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25°C Tj=125°C (Maximum values) 10.0 Tj=25°C (Maximum values) Tj=125°C (Typical values) 10 1.0 VFM(V) VR(V) 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000 3/5 STTH152 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). trr(ns) IRM(A) 4.0 90 IF=1.5A VR=100V 80 IF=1.5A VR=100V 3.5 70 3.0 Tj=125°C 60 Tj=125°C 2.5 50 2.0 Tj=25°C 40 Tj=25°C 1.5 30 1.0 20 10 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 1 10 100 1000 1 10 100 Fig. 9: Relative variations of dynamic parameters versus junction temperature. c u d IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 3.5 IF=1.5A dIF/dt=200A/µs VR=100V 3.0 e t le Qrr 2.5 2.0 trr 1.5 IRM Tj(°C) 1.0 25 50 75 100 o r P e t e l o s b O 4/5 125 c u d (t s) 150 o s b O - 175 o r P 1000 ) s t( STTH152 PACKAGE MECHANICAL DATA DO-15 DIMENSIONS C D ■ ■ REF. C A B Millimeters Min. Max. Min. Max. A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139 C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035 Ordering code Marking Package Weight Base qty STTH152 STTH152 DO-15 0.4 g 1000 STTH152RL STTH152 DO-15 0.4 g e t le c u d o r P 6000 White band indicates cathode Epoxy meets UL 94,V0 ) s ( ct Inches ) s t( Delivery mode Ammopack Tape and reel o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5