STTH16003
High frequency secondary rectifier
Features
■ ■ ■
A1 A2
K1 K2
Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated package: ISOTOP – insulated voltage: 2500 V rms – capacitance: < 45 pF Low inductance and low capacitance allow simplified layout
K2
K1
■
A1
Description
Dual rectifiers suited for switch mode power supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.
A2
ISOTOP™ STTH16003TV1
Table 1.
Device summary
IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 300 V 150 °C 0.95 V 80 ns
TM: ISOTOP is a registered trademark of STMicroelectronics
June 2008
Rev 5
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www.st.com 7
Characteristics
STTH16003
1
Table 2.
Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj
Characteristics
Absolute ratings (limiting values, per diode, Tamb = 25 °C unless otherwise stated)
Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature Tc = 85°C δ = 0.5 Per diode Per device Value 300 180 60 160 800 5 -55 to + 150 150 Unit V A A A A °C °C
tp = 10 ms Sinusoidal tp = 100 µs square
Table 3.
Symbol Rth(j-c) Rth(c)
Thermal parameters
Parameter Per diode Junction to case Total Coupling 0.4 0.1 °C/W Maximum 0.7 Unit
When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4.
Symbol IR(1) VF(2)
Static electrical characteristics (per diode)
Parameter Reverse leakage current Test conditions Tj = 25 °C Tj= 125 °C Forward voltage drop Tj = 25 °C Tj = 125 °C VR = 300 V Min. Typ Max. 200 0.2 2 1.2 IF = 8 0 A V 0.8 0.95 Unit µA
mA
1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % 1. to evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0025 IF2(RMS)
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STTH16003 Table 5.
Symbol
Characteristics Recovery characteristics
Parameter Test conditions IF = 0.5 A, Irr = 0.25 A IR = 1 A IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V dIF/dt = 200 A/µs IF = 80 A VFR = 1.1 x VFmax IF = 60 A, dIF/dt = 200 A/µs, Vcc = 200 V Min. Typ Max. 60 80 1000 5 16 0.3 Unit ns ns ns V A -
trr
Reverse recovery time
Tj = 25 °C
tfr VFP IRM Sfactor
Forward recovery time Forward recovery voltage Reverse recovery current Tj = 125 °C Tj = 25 °C
Figure 1.
Conduction losses versus average current (per diode)
Figure 2.
Forward voltage drop versus forward current (maximum values, per diode)
100 90 80 70 60 50 40 30 20 10 0
P1(W)
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ=1
IFM(A) 200 100
Tj=125°C (Typical values) Tj=25°C
10
T
Tj=125°C
IF(av) (A) 0 10 20 30 40 50 60 70
δ=tp/T
tp
80
90
100
1 0.0
VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Figure 3.
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration
IRM(A) 30 25
VR=200V Tj=125°C
Peak reverse recovery current versus dIF/dt (90% confidence, per diode)
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2
Single pulse δ = 0.5
IF=2xIF(av) IF=IF(av) IF=0.5xIF(av)
20 15
δ = 0.2 δ = 0.1
10
T
5
tp(s) 1E-2 1E-1
δ=tp/T
tp
dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500
0.0 1E-3
1E+0
5E+0
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Characteristics
STTH16003
Figure 5.
trr(ns) 240 220 200 180 160 140 120 100 80 60 40 20 0
Reverse recovery time versus dIF/dt (90% confidence, per diode)
Figure 6.
Softness factor (tb/ta) versus dIF/dt (typical values, per diode)
S factor
VR=200V Tj=125°C
0.6 0.5
VR=200V Tj=125°C
IF=2xIF(av)
0.4
IF=IF(av) IF=0.5xIF(av)
0.3 0.2 0.1
dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
0.0
dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
Figure 7.
Relative variation of dynamic Figure 8. parameters versus junction temperature (reference: Tj = 125°C)
VFP(V) 8
S factor
Transient peak forward voltage versus dIF/dt (90% confidence, per diode)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25
7 6 5 4 3 2 1
100 125
IF=IF(av) Tj=125°C
IRM
Tj(°C) 50 75
dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
0
Figure 9.
Forward recovery time versus dIF/dt (90% confidence, per diode)
tfr(ns) 1000 900 800 700 600 500 400 300 200 100 0
VFR=1.1 x VF max. IF=IF(av) Tj=125°C
dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
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STTH16003
Package information
2
Package information
● ● ●
Cooling method: by conduction (C) Recommended torque value: 0.9 to 1.2 N·m Epoxy meets UL 94,V0
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 6. ISOTOP dimensions
Dimensions Ref. Millimeters Min.
E G2
Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951
Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15
A
C
11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85
A1
A A1 C2 E2
B C C2
F1 F
D D1 E
P1
E1
G D1
D
S
E2 G
24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30
0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
B
G1 G2
ØP G1 E1
F F1 P P1 S
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Ordering information
STTH16003
3
Ordering information
Table 7. Ordering information
Marking Package ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube
Order code
STTH16003TV1 STTH16003TV1
4
Revision history
Table 8.
Date Oct-1999 25-Jun-2008
Document revision history
Revision 4D 5 Last issue. Reformatted to current standards. Corrected marking in Table 7 Description of changes
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STTH16003
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