STTH1602CR

STTH1602C ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) Up to 2 x 10A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 21 ns K FEATURES AND BENEFITS A2 ■ ■ ■ ■ ■ ■ Suited for SMPS Low losses Low forward and reverse recovery times Low leakage current High junction temperature Insulated package: TO-220FPAB A2 K K A1 A1 I2PAK STTH1602CR TO-220AB STTH1602CT K DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in TO-220AB, D2PAK, TO-220FPAB and I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. K A2 K A1 TO-220FPAB STTH1602CFP A2 A1 D2PAK STTH1602CG ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current δ =0.5 2 TO-220AB / I PAK / D2PAK TO-220FPAB IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature February 2004 - Ed: 1 Value Unit 200 V 30 A A Tc = 150°C Per diode 8 Tc = 140°C Per device 16 Tc = 140°C Per diode 10 Tc = 130°C Per device 20 Tc = 130°C Per diode 8 Tc = 100°C Per device 16 Tc = 110°C Per diode 10 Tc = 75°C Per device 20 tp = 10 ms Sinusoidal 80 A - 65 + 175 °C 175 °C 1/7 STTH1602C THERMAL PARAMETERS Symbol Parameter Rth (j-c) Junction to case 2 2 TO-220AB / I PAK / D PAK TO-220FPAB Coupling Rth (j-c) 2 Maximum Unit Per diode 3.0 °C/W Per device 1.9 Per diode 5.5 Per device 4.5 2 TO-220AB / I PAK / D PAK 0.8 TO-220FPAB 3.5 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR* Tests conditions Reverse leakage current VF** Tj = 25°C Min. VR = VRRM 4 Tj = 125°C Forward voltage drop Typ. Max. Unit 6 µA 60 Tj = 25°C IF = 8 A 1.1 Tj = 25°C IF = 16 A 1.25 Tj = 150°C IF = 8 A Tj = 150°C IF = 16 A 0.78 V 0.89 1.05 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.73 x IF(AV) + 0.020 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IRM tfr VFP 2/7 Parameter Tests conditions Min. Typ. Max. Unit Reverse recovery time Tj = 25°C IF = 1 A VR = 30V dIF/dt = 100 A/µs 21 26 ns Reverse recovery current Tj = 125°C IF = 8 A VR = 160V dIF/dt = 200 A/µs 6.8 8.8 A Forward recovery time Tj = 25°C IF = 8 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 160 ns Forward recovery voltage Tj = 25°C IF = 8 A dIF/dt = 100 A/µs 2.4 V STTH1602C Fig. 1: Peak current versus duty cycle (per diode). Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode). IM(A) IFM(A) 80 100 90 70 IM T 80 60 70 δ=tp/T 50 tp Tj=150°C 60 50 40 P = 15W 40 Tj=25°C 30 30 P = 8W 20 20 10 P = 3W 10 0 0.0 0.1 0.2 0.3 0.4 VFM(V) 0 δ 0.0 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1.0 Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode). Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, D2PAK, I2PAK). Zth(j-c)/Rth(j-c) IFM(A) 1.0 100 90 80 70 60 Single pulse Tj=150°C 50 40 30 Tj=25°C 20 10 tp(s) VFM(V) 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode). Zth(j-c)/Rth(j-c) C(pF) 1.0 100 F=1MHz VOSC=30mVRMS Tj=25°C Single pulse 0.1 VR(V) tp(s) 10 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 50 100 150 200 3/7 STTH1602C Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode). Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). trr(ns) Qrr(nC) 280 80 260 IF=8A VR=160V 240 IF=8A VR=160V 70 220 60 200 180 Tj=125°C 50 160 Tj=125°C 140 40 120 30 100 80 20 60 Tj=25°C Tj=25°C 40 10 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 1000 Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). 10 100 1000 Fig. 8: Dynamic parameters versus junction temperature. IRM(A) Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C] 16 1.4 IF=8A VR=160V 14 IF=8A VR=160V 1.2 12 1.0 10 IRM 0.8 8 Qrr Tj=125°C 0.6 6 0.4 4 Tj=25°C 0.2 2 Tj(°C) dIF/dt(A/µs) 0.0 0 10 100 1000 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU: 35µm) for D2PAK. Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 S(Cu)(cm²) 0 0 4/7 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 STTH1602C Ordering code Marking Package Weight Base qty Delivery mode STTH1602CT STTH1602CT TO-220AB STTH1602CG STTH1602CG STTH1602CG-TR 2.23 g 50 Tube 2 1.48 g 50 Tube 2 1.48 g 1000 Tape & reel 2 D PAK STTH1602CG D PAK STTH1602CR STTH1602CR I PAK 1.49 g 50 Tube STTH1602CFP STTH1602CFP TO-220FPAB 1.70g 50 Tube PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 5/7 STTH1602C PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E c2 L2 D L1 A1 b2 L b1 b Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 c e PACKAGE MECHANICAL DATA TO-220FPAB REF. A B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F G1 G 6/7 E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 STTH1602C PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. Dia Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 C L5 L7 L6 L2 F2 F1 D L9 L4 L2 F M G1 E G ■ ■ ■ ■ 0.645 typ. 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 Diam. ■ 16.4 typ. L4 M ■ Inches Min. A H2 Millimeters 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Epoxy meets UL94,V0 Cooling method: by conduction (method C) Recommended torque value (TO-220AB): 0.8 N.m. Maximum torque value (TO-220AB): 1.0 N.m. Recommended torque value (TO-220FPAB): 0.55 N.m. Maximum torque value (TO-220FPAB): 0.7 N.m. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. 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