STTH16R04CFP

STTH16R04C Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2X8A 400 V 175° C 0.9 V A2 A2 A1 K A1 A2 K 25 ns A1 K Features and benefits ■ ■ ■ ■ TO-220AB STTH16R04CT TO-220FPAB STTH16R04CFP Very low switching losses High frequency and/or high pulsed current operation High junction temperature Insulated package: – TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF A1 K A2 D2PAK STTH16R04CG Description The STTH16R04C series uses ST's new 400 V planar Pt doping technology. The STTH16R04C is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes Part Number STTH16R04CT STTH16R04CG STTH16R04CG-TR STTH16R04CFP Marking STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CFP March 2007 Rev 1 1/10 www.st.com Characteristics STTH16R04C 1 Table 1. Symbol VRRM IF(RMS) Characteristics Absolute ratings (limiting values at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current TO-220AB / D2PAK IF(AV) Average forward current, δ = 0.5 TO-220FPAB IFSM Tstg Tj Per diode Tc = 150° C Per device Tc = 145° C Per diode Tc = 125° C Per device Tc = 90° C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature range Value 400 30 8 16 A 8 16 120 -65 to +175 -40 to +175 A °C °C Unit V A Table 2. Symbol Thermal parameters Parameter TO-220AC / D2PAK Per diode Per device Value 2 1.15 °C/W Per diode TO-220FPAB per device TO-220AC / D2PAK Per device per device 3.8 0.3 °C/W TO-220FPAB 3 4.6 Unit Rth(j-c) Junction to case Rth(c) Coupling When the diodes are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/10 STTH16R04C Table 3. Symbol IR(1) Characteristics Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 100° C VF(2) Forward voltage drop Tj = 150° C Tj = 25° C Tj = 100° C Tj = 150° C IF = 16 A 1.25 1.12 IF = 8 A 1.05 0.9 VR = VRRM Min Typ Max 10 µA 10 100 1.5 1.3 1.1 V 1.75 1.55 1.37 Unit 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.83 x IF(AV) + 0.034 x IF2(RMS) Table 4. Symbol Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 8 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 8 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 8 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs Tj = 25° C 2.9 Min Typ 35 25 5.5 0.4 150 ns V Max 50 ns 35 8 A Unit trr Reverse recovery time IRM S tfr VFP 3/10 Characteristics STTH16R04C Figure 1. P(W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 Conduction losses versus average current δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 Figure 2. IFM(A) Forward voltage drop versus forward current 200 180 160 140 120 100 80 60 T TJ=150°C (Maximum values) TJ=150°C (Typical values) 40 IF(AV)(A) 3 4 5 6 7 8 TJ=25°C (Maximum values) δ=tp/T 9 10 tp 20 0 11 VFM(V) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Relative variation of thermal impedance junction to case versus pulse duration TO-220FPAB Zth(j-c)/Rth(j-c) 1.0 Single pulse TO-220AB/D²PAK Zth(j-c)/Rth(j-c) 1.0 Single pulse TO-220FPAB 0.1 tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Figure 5. IRM(A) IF= 8 A VR=320 V Peak reverse recovery current versus dIF/dt (typical values) Figure 6. tRR(ns) Reverse recovery time versus dIF/dt (typical values) IF= 8 A VR=320 V 12 11 10 9 8 7 6 5 4 3 2 1 0 140 120 100 80 Tj=125 °C 60 40 Tj=25 °C Tj=125 °C Tj=25 °C 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 1000 10 100 10 100 1000 4/10 STTH16R04C Characteristics Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU = 35 µm) D²PAK 200 180 160 QRR(nC) IF= 8 A VR=320 V Rth(j-a) (°C/W) 80 70 60 140 120 100 80 60 40 20 0 10 100 1000 Tj=25 °C Tj=125 °C 50 40 30 20 10 dIF/dt(A/µs) 0 0 2 4 6 8 SCU(cm²) 10 12 14 16 18 20 Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values) VFp(V) 5.0 4.5 4.0 IF=8 A Tj=125 °C 1.4 1.2 1.0 0.8 0.6 QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] IF= 8 A VR=320 V 3.5 IRM 3.0 2.5 2.0 QRR 0.4 0.2 T j(°C) 0.0 25 50 75 100 125 150 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus (typical values) reverse voltage applied (typical values) 700 600 500 400 300 200 100 0 0 100 200 300 400 500 dIF/dt(A/µs) VR(V) 10 1 10 100 1000 tFR(ns) IF=8 A VFR=1.1 x V F max. Tj=125°C C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25°C 5/10 Package information STTH16R04C 2 Package information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm (TO-220FPAB) / 0.55 Nm (TO-220AB) Maximum torque value: 1.0 Nm (TO-220FPAB) / 0.70 Nm (TO-220AB) D2PAK dimensions Dimensions Ref. Millimeters Min. A A E L2 C2 Table 5. Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 A1 A2 B D L L3 A1 B2 B G A2 R B2 C C2 C D E G L M * V2 L2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0° 8° 0.016 typ. 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 1.30 5.08 8.90 3.70 6/10 STTH16R04C Table 6. TO-220AB dimensions Package information Dimensions Ref. Millimeters Min. A a1 B ØI L F A I4 l3 a1 l2 c2 b2 C Inches Min. Typ. Max. 0.625 0.147 Typ. Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.90 0.598 a2 B b1 b2 C c1 c2 14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 a2 e M F c1 b1 e ØI I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066 7/10 Package information Table 7. TO-220FPAB dimensions STTH16R04C Dimensions Ref. Millimeters Min. A A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 E 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G L3 L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 STTH16R04C Ordering information 3 Ordering information Part Number STTH16R04CT STTH16R04CG STTH16R04CG-TR STTH16R04CFP Marking STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CFP Package TO-220AB D PAK D2PAK TO-220FPAB 2 Weight 1.92 g 1.48 g 1.48 g 1.69 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape and reel Tube 4 Revision history Date 31-Mar-2007 Revision 1 First issue Description of Changes 9/10 STTH16R04C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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