STTH1R02ZF

STTH1R02ZF Ultrafast rectifier Datasheet - production data Description The STTH1R02ZF is an ultrafast recovery rectifier used for energy recovery in switched mode power supplies, switching mode base drive and transistor circuits. Packaged in SOD123Flat, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection. A K A K The compromise between forward voltage drop and recovery time offers optimized performances. SOD123Flat Table 1: Device summary Symbol Features        Very low conduction losses High surge capability Negligible switching losses Low forward and reverse recovery times High junction temperature ECOPACK®2 compliant component Surface mount miniature packages February 2017 DocID030263 Rev 1 This is information on a product in full production. Value IF(AV) 1A VRRM 200 V Tj (max.) 175 °C VF (typ.) 0.75 V trr (typ.) 25 ns 1/8 www.st.com Characteristics 1 STTH1R02ZF Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current Tlead = 153 °C , δ = 0.5 square wave 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 25 A Tstg Storage temperature range -65 to +175 °C +175 °C Maximum Unit 23 °C/W Tj Maximum operating junction temperature Table 3: Thermal parameter Symbol Rth(j-l) Parameter Junction to lead Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min. VR = VRRM IF = 1 A Typ. - Max. Unit 0.5 µA µA - 1 10 - 0.87 1.00 - 0.75 0.85 V Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.75 x IF(AV) + 0.1 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol trr 2/8 Parameters Test conditions Reverse recovery time IRM Reverse recovery current Qrr Reverse recovery charges IF = 1 A dIF/dt = 50 A/μs VR = 30 V Tj = 25 °C IF = 1 A dIF/dt = 100 A/μs VR = 160 V Tj = 125 °C DocID030263 Rev 1 Min. Typ. Max. Unit - 25 32 - 30 - 2.2 A - 34 nC ns STTH1R02ZF 1.2 Characteristics Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current Figure 2: Forward voltage drop versus forward current (typical values) PF(AV)(W) 1.2 10.00 δ = 0.05 1.0 δ = 0.1 δ = 0.2 δ = 0.5 IF(A) δ=1 T j = 125 °C 1.00 0.8 0.6 T j = 25 °C 0.10 0.4 T 0.2 δ= tp/T IF(AV)(A) tp VF(V) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 3: Forward voltage drop versus forward current (maximum values) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Figure 4: Relative variation of thermal impedance junction to lead versus pulse duration IF(A) 10.00 Z /R th(j-l) th(j-l) 1.0 0.9 Single pulse 0.8 0.7 T j = 125 °C 1.00 0.6 0.5 T j = 25 °C 0.4 0.10 0.3 0.2 0.1 VF(V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 5: Peak reverse recovery current versus dIF / dt (typical values) IRM(A) 6 t (s) P 0.0 1.E-04 1.E-02 1.E-01 1.E+00 1.E+01 Figure 6: Reverse recovery charges versus dIF / dt (typical values) Qrr(nC) 80 IF = 1A VR= 160 V Tj = 125 °C 5 1.E-03 IF = 1A VR= 160 V Tj = 125 °C 60 4 40 3 2 20 1 dlF/dt (A/µs) dlF/dt (A/µs) 0 0 0 100 200 300 400 500 0 DocID030263 Rev 1 100 200 300 400 500 3/8 Characteristics STTH1R02ZF Figure 7: Reverse recovery time versus dIF / dt (typical values) Figure 8: Reverse recovery softness factor versus dIF / dt (typical values) trr(ns) 60 Sfactor 0.8 IF = 1A VR= 160 V Tj = 125 °C 50 IF = 1A VR= 160 V Tj = 125 °C 0.6 40 30 0.4 20 0.2 10 dlF/dt (A/µs) dlF/dt (A/µs) 0 0.0 0 100 200 300 400 500 0 Figure 9: Dynamic parameters versus junction temperature (reference Tj = 125 °C) 100 300 400 S; Q RR; IRM [T j ] / S; Q RR; IRM [T j =125°C] C(pF) 100 F = 1 MHz VOSC = 30 mVRMS T = 25 °C IF=1A VR =160V T =125°C S 500 Figure 10: Junction capacitance versus reverse voltage applied (typical values) 1.4 1.2 200 j 1.0 IRM 0.8 10 0.6 QRR 0.4 0.2 VR(V) Tj(°C) 0.0 1 25 50 75 100 125 1 10 100 Figure 11: Thermal resistance junction to ambient total versus copper surface under each lead (typical values) 250 Rth(j-a)(C/W) SOD123Flat 200 150 100 Epoxy printed board FR4, eCu = 35 µm 50 SCu (cm²) 0 0.0 4/8 0.5 1.0 1.5 2.0 2.5 DocID030263 Rev 1 3.0 3.5 4.0 4.5 5.0 1000 Package information STTH1R02ZF 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) SOD123Flat package information Figure 12: SOD123Flat package outline A C1 L HD D L b C E DocID030263 Rev 1 5/8 Package information STTH1R02ZF Table 6: SOD123Flat package mechanical data Dimensions Ref. Millimeters Min. Typ. Max. A 0.86 0.98 1.10 b 0.80 0.90 1.00 c 0.08 0.15 0.25 c1 0.00 D 2.50 2.60 2.70 E 1.50 1.60 1.80 HD 3.30 3.50 3.70 L 0.45 0.65 0.85 0.10 Figure 13: SOD123Flat footprint dimensions (mm) 1.60 1.40 1.30 6/8 DocID030263 Rev 1 Ordering information STTH1R02ZF 3 Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH1R02ZF 1R2 SOD123Flat 12.5 mg 3000 Tape and reel Revision history Table 8: Document revision history Date Revision 06-Feb-2017 1 Changes First issue DocID030263 Rev 1 7/8 STTH1R02ZF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 8/8 DocID030263 Rev 1