STTH1R04UY

STTH1R04-Y Automotive ultrafast recovery diode Datasheet - production data Description This device that uses ST's new 400 V planar Pt doping technology, is specially suited for switching mode base drive and transistor circuits. A Packaged in SMB and SMA, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. K SMA Table 1: Device summary SMB Features      AEC-Q101 qualified Negligible switching losses Low forward and reverse recovery times High junction temperature ECOPACK®2 compliant component March 2017 DocID024449 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 1A VRRM 400 V Tj (max.) 175 °C VF (typ.) 0.9 V trr (typ.) 14 ns 1/12 www.st.com Characteristics 1 STTH1R04-Y Characteristics Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol VRRM Parameter Repetitive peak reverse voltage IF(AV) Average forward current, δ = 0.5, square wave IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Operating junction Tj = -40 °C to +175 °C SMA Tl = 130 °C SMB Tl = 140 °C Value Unit 400 V 1.0 A tp = 10 ms sinusoidal 30 tp = 8.3 ms sinusoidal 37 temperature(1) A -65 to +175 °C -40 to +175 °C Notes: (1)(dP tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal resistance parameters Symbol Rth(j-l) Parameter Junction to lead Maximum value SMA 30 SMB 25 Unit °C/W Table 4: Static electrical characteristics ( per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C VF(2) Forward voltage drop Tj = 100 °C IF = 1 A Tj = 150 °C Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.9 x IF(AV) + 0.250 x IF2(RMS) 2/12 DocID024449 Rev 2 Min. Typ. - Max. 5 - 5 50 - 1.30 1.60 - 1.05 1.30 - 0.90 1.15 Unit µA V STTH1R04-Y Characteristics Table 5: Dynamic electrical characteristics per diode (Tj = 25 °C, unless otherwise specified) Symbol trr Parameters Reverse recovery time Test conditions Min. Max. IF = 1 A dIF/dt = -50 A/μs VR = 30 V - IF = 1 A dIF/dt = -100 A/μs VR = 30 V - 14 20 - 2.5 3.5 2.9 IRM Reverse recovery current VFP Forward recovery voltage IF = 1 A dIF/dt = 100 A/μs - Forward recovery time IF = 1 A dIF/dt = 100 A/μs VFR = 1.1 x VF (max) - DocID024449 Rev 2 Unit 30 ns IF = 1 A dIF/dt = -200 A/μs VR = 320 V Tj = 125 °C tfr Typ. A V 50 ns 3/12 Characteristics 1.1 STTH1R04-Y Characteristics (curves) Figure 1: Conduction losses versus average forward current 1.6 Figure 2: Forward voltage drop versus forward current PF( AV )(W) 100.0 δ = 0.2 δ = 0.1 IFM (A) δ = 0.5 δ = 0.05 1.4 Tj =150°C (Maximum values) 1.2 10.0 δ=1 1.0 Tj =150°C (Typical values) 0.8 Tj =25°C (Maximum values) 0.6 1.0 0.4 T 0.2 IF( AV 0.0 0.0 0.2 0.4 ) ( A) 0.6 δ =tp/T 0.8 VFM (V) tp 0.1 1.0 1.2 Figure 3: Relative variation of thermal impedance junction to case ambient versus pulse duration (SMA) 1.0 0.0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Figure 4: Relative variation of thermal impedance junction to case ambient versus pulse duration (SMB) Zth (j-a) /Rth(j-a) Zth (j-a) /Rth(j-a) 1.0 SMA S cu = 1cm² 0.9 0.4 SMB Scu = 1 cm 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 Single pulse 0.1 t P(s) Single pulse 0.1 t P (s) 0.0 1.E-02 0.0 1.E-03 1.E-01 1.E+00 1.E+01 1.E+02 Figure 5: Junction capacitance versus reverse voltage applied (typical values) 100 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+03 Figure 6: Reverse recovery charges versus dIF / dt (typical values) C(pF) QRR(nC) 40 F=1MHz VOSC =30mVRMS Tj=25°C IF = 1 A VR =320 V 36 32 28 24 10 Tj=125 °C 20 16 12 8 Tj=25 °C 4 1 10 1 4/12 dIF/dt(A/µs) 0 VR(V) 10 100 1000 DocID024449 Rev 2 100 1000 STTH1R04-Y Characteristics Figure 7: Reverse recovery time versus dIF / dt (typical values) IRM(A) 5.0 t RR(ns) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 Figure 8: Peak reverse recovery current versus dIF / dt (typical values) IF = 1 A VR =320 V 4.5 IF = 1 A VR =320 V 4.0 3.5 3.0 Tj=125 °C 2.5 Tj=125 °C 2.0 1.5 Tj=25 °C 1.0 10 Tj=25 °C 0.5 dIF/dt(A/µs) 100 1000 dIF/dt(A/µs) 0.0 10 Figure 9: Relative variation of dynamic parameters versus junction temperature Q QRR [Tj ]j ] // Q QRR [Tj =125°C] RR;; IIRM RM [T RR;; IIRM RM [T j =125°C] 1.4 1000 Figure 10: Transient peak forward voltage versus dIF / dt (typical values) 30 VFp(V) IF =1 A Tj=125 °C IF = 1 A VR =320 V 1.2 100 25 1.0 20 IRM 0.8 15 QRR 0.6 10 0.4 5 0.2 dIF/dt(A/µs) Tj (°C) 0 0.0 25 50 75 100 125 150 Figure 11: Forward recovery time versus dIF / dt (typical values) 55 t FR(ns) 0 50 150 200 250 300 350 400 450 500 Figure 12: Thermal resistance junction to ambient total versus copper surface under each lead (SMA) 200 Rth (j -a) (°C/W) epoxy printed board FR4, copper thickness Cu = 35 µm IF=1 A Tj=125 °C 50 100 SMA 45 150 40 35 30 100 25 20 15 50 10 5 SCU(cm²) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 DocID024449 Rev 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5/12 5.0 Characteristics STTH1R04-Y Figure 13: Thermal resistance junction to ambient total versus copper surface under each lead (SMB) 200 Rth (j -a) (°C/W) epoxy printed board FR4, copper thickness Cu = 35 µm SMB 150 100 50 SCU(cm²) 0 0.0 6/12 0.5 1.0 1.5 2.0 2.5 DocID024449 Rev 2 3.0 3.5 4.0 4.5 5.0 Package information STTH1R04-Y 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 SMA package information Figure 14: SMA package outline Table 6: SMA package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.097 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 E 4.80 5.35 0.189 0.211 E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 DocID024449 Rev 2 7/12 Package information STTH1R04-Y Figure 15: SMA recommended footprint in mm (inches) 1.4 2.63 1.4 (0.055) (0.103) (0.055) 1.64 (0.064) 5.43 (0.214) 8/12 DocID024449 Rev 2 Package information STTH1R04-Y 2.2 SMB package information Figure 16: SMB package outline Table 7: SMB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 DocID024449 Rev 2 9/12 Package information STTH1R04-Y Figure 17: SMB recommended Footprint 1.62 0.064 2.60 (0.102) 2.18 (0.086) 5.84 (0.230) millimeters (inches) 10/12 DocID024449 Rev 2 1.62 0.064 Ordering information STTH1R04-Y 3 Ordering information Table 8: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH1R04AY HR4Y SMA 0.068 g 5000 Tape and reel STTH1R04UY BR4Y SMB 0.12 g 2500 Tape and reel Revision history Table 9: Document revision history Date Revis ion 09-Jul-2013 1 First issue 16-Mar-2017 2 Updated Table 2: "Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)". Changes DocID024449 Rev 2 11/12 STTH1R04-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 12/12 DocID024449 Rev 2