STTH1R06AF

STTH1R06AF Datasheet 600 V, 1 A, turbo 2 ultrafast rectifier Features K A SOD128Flat • • • • • • Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK2 compliant component Applications • • • Product status STTH1R06AF Clamping function Boost diode PFC Description Product summary IF(AV) 1A VRRM 600 V trr 30 ns Tj 175 °C VF(typ.) 1.08 V The STTH1R06AF is an ultrafast recovery power rectifier housed in SOD128Flat to improve space saving. It is especially designed for clamping function in energy recovery block or boost diode in power correction circuitry. The compromise between forward voltage drop and recovery time offers optimized performance. DS12471 - Rev 3 - April 2022 For further information contact your local STMicroelectronics sales office. www.st.com STTH1R06AF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit 600 V VRRM Repetitive peak reverse voltage IF(AV) Average forward current TL = 135 °C, δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A Tstg Storage temperature range -65 to +175 °C 175 °C Tj Operating junction temperature Table 2. Thermal parameters Symbol Rth(j-l) Parameter Junction to lead Typ. Max. Unit 16 24 °C/W Table 3. Static electrical characteristics Symbol Parameter IR Reverse leakage current VF Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = 600 V IF = 1 A Min. Typ. Max. - 1 10 - µA 75 - 1.9 1.08 Unit V 1.4 To evaluate the conduction losses, use the following equation: P = 1.1 x IF(AV) + 0.30 x IF2(RMS) Table 4. Dynamic electrical characteristics Symbol trr Reverse recovery time IRM Reverse recovery current QRR Reverse recovery charge trr DS12471 - Rev 3 Parameter Reverse recovery time Test conditions Tj = 25 °C Tj = 125 °C IF = 1 A, VR = 30 V, dlF/dt = -50 A/µs IF = 1 A, VR = 400 V, dlF/dt = -200 A/µs Min. Typ. Max. Unit - 30 45 ns - 3 A - 90 nC - 65 ns page 2/9 STTH1R06AF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 2.0 PF(AV)(W) Figure 2. Forward voltage drop versus forward current (typical values) 10.00 δ = 0.1 δ = 0.05 δ = 0.5 δ = 0.2 IF(A) δ= 1 1.6 1.00 Tj = 25 °C Tj = 150 °C 1.2 0.8 0.10 T 0.4 0.1 0.2 0.3 0.4 0.5 0.6 tp δ =tp/T IF(AV)(A) 0.0 0.0 0.7 0.8 0.9 1.0 1.1 VF(V) 1.2 Figure 3. Forward voltage drop versus forward current (maximum values) 10.00 IF(A) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration 1.0 Zth(j-l) /Rth(j-l) 0.9 0.8 0.7 1.00 Tj = 25 °C Tj = 150 °C 0.6 0.5 0.4 0.10 0.3 0.2 VF(V) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 5. Peak reverse recovery current versus dlF/dt (typical values) 8 IRM(A) IF = 2 x IF(AV) 6 IF = IF(AV) 5 IF = 0.5 x IF(AV) 4 IF = 0.25 x IF(AV) 3 2 1 dIF/dt(A/µs) 0 0 50 DS12471 - Rev 3 100 150 200 250 300 350 400 450 500 t P(s) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Figure 6. Reverse recovery time versus dlF/dt (typical values) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 VR = 400 V Tj = 125 °C 7 Single pulse 0.1 t RR(ns) VR = 400 V Tj = 125 °C IF = 2 x IF(AV) IF = IF(AV) IF = 0.5 x IF(AV) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 page 3/9 STTH1R06AF Characteristics (curves) Figure 7. Reverse recovery charges versus dIF/dt (typical values) 250 Figure 8. Softness factor versus dIF/dt (typical values) QRR(nC) 8 VR = 400 V Tj = 125 °C 7 225 200 S factor IF = IF(AV) VR = 400 V Tj = 125 °C 6 IF = 2 x IF(AV) 175 5 150 4 125 IF = IF(AV) 3 100 IF = 0.5 x IF(AV) 75 2 50 1 dIF/dt(A/µs) 25 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 0 50 Figure 9. Relative variations of dynamic parameters versus junction temperature 150 200 250 300 350 400 450 500 Figure 10. Junction capacitance versus reverse voltage applied (typical values) 1.0 100 0.9 100 500 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C S factor 0.8 IRM 0.7 0.6 QRR 0.5 10 0.4 0.3 0.2 0.1 T j (°C) IF = IF(AV) VR = 400 V Reference: Tj = 125°C VR(V) 0.0 25 50 75 100 1 125 1 10 100 1000 Figure 11. Thermal resistance junction to ambient versus copper surface under each lead (typical values, epoxy printed board FR4, eCu = 35 µm) 200 Rth(j-a) (°C/W) SOD128-Flat 150 100 50 SCu (cm²) 0 0.0 DS12471 - Rev 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 page 4/9 STTH1R06AF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 SOD128Flat package information • • Epoxy meets UL94, V0 Lead-free package Figure 12. SOD128Flat package outline DS12471 - Rev 3 page 5/9 STTH1R06AF SOD128Flat package information Table 5. SOD128Flat package mechanical data Dimensions Millimeters Ref. Inches Min. Max. Min. Max. A 0.93 1.03 0.037 0.041 b 1.69 1.81 0.067 0.071 c 0.10 0.22 0.004 0.009 D 2.30 2.50 0.091 0.098 E 4.60 4.80 0.181 0.189 E1 3.70 3.90 0.146 0.154 L 0.55 0.85 0.026 0.033 L1 0.30 typ. 0.012 typ. L2 0.45 typ. 0.018 typ. Figure 13. SOD128Flat footprint in mm (inches) DS12471 - Rev 3 page 6/9 STTH1R06AF Ordering information 3 Ordering information Table 6. Ordering information DS12471 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STTH1R06AF 1R6A SOD128Flat 26.4 mg 3000 Tape and reel page 7/9 STTH1R06AF Revision history Table 7. Document revision history DS12471 - Rev 3 Date Revision 03-Apr-2018 1 06-Dec-2018 2 11-Apr-2022 3 Changes Initial release. Added Section Applications. Updated title of document. Updated Table 6. page 8/9 STTH1R06AF IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS12471 - Rev 3 page 9/9