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STTH1R06AFY

STTH1R06AFY

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOD128

  • 描述:

    AUTOMOTIVE 600 V, 1 A SOD128FLAT

  • 数据手册
  • 价格&库存
STTH1R06AFY 数据手册
STTH1R06AFY Datasheet Automotive 600 V, 1 A, turbo 2 ultrafast rectifier Features K A SOD128Flat • • • AEC-Q101 qualified Ultrafast recovery VRRM 600 V up to -40 °C • • • • • Low power losses High surge capability Low leakage current High junction temperature PPAP capable • ECOPACK®2 compliant component Applications • • • • Reverse polarity protection Clamping function Boost diode PFC Description The STTH1R06AFY is an ultrafast recovery power rectifier dedicated to energy recovery in automotive application housed in SOD128Flat to improve space saving. Product status STTH1R06AFY It is especially designed for clamping function in energy recovery block. Product summary IF(AV) 1A VRRM 600 V trr 30 ns Tj 175 °C VF(typ.) 1.08 V The compromise between forward voltage drop and recovery time offers optimized performance. DS12434 - Rev 2 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com STTH1R06AFY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit 600 V VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(AV) Average forward current TL = 135 °C, δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Tj Table 2. Thermal parameters Symbol Rth(j-l) Parameter Junction to lead Typ. Max. Unit 16 24 °C/W Table 3. Static electrical characteristics Symbol Parameter IR Reverse leakage current VF Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = 600 V IF = 1 A Min. Typ. Max. - 1 10 µA 75 - Unit 1.9 1.08 V 1.4 To evaluate the conduction losses, use the following equation: P = 1.1 x IF(AV) + 0.30 x IF2(RMS) Table 4. Dynamic electrical characteristics Symbol trr Reverse recovery time IRM Reverse recovery current QRR Reverse recovery charge trr DS12434 - Rev 2 Parameter Reverse recovery time Test conditions Tj = 25 °C Tj = 125 °C IF = 1 A, VR = 30 V, dlF/dt = -50 A/µs IF = 1 A, VR = 400 V, dlF/dt = -200 A/µs Min. Typ. Max. Unit - 30 45 ns - 3 A - 90 nC - 65 ns page 2/10 STTH1R06AFY Characteristics (curves) 1.1 Characteristics (curves) Figure 2. Average forward power dissipation versus average forward current 2.0 PF(AV)(W) Figure 3. Forward voltage drop versus forward current (typical values) 10.00 δ = 0.1 δ = 0.05 δ = 0.5 δ = 0.2 IF(A) δ= 1 1.6 1.00 Tj = 25 °C Tj = 150 °C 1.2 0.8 0.10 T 0.4 0.1 0.2 0.3 0.4 0.5 0.6 tp δ =tp/T IF(AV)(A) 0.0 0.0 0.7 0.8 0.9 1.0 1.1 VF(V) 1.2 Figure 4. Forward voltage drop versus forward current (maximum values) 10.00 IF(A) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 5. Relative variation of thermal impedance junction to lead versus pulse duration 1.0 Zth(j-l) /Rth(j-l) 0.9 0.8 0.7 1.00 Tj = 25 °C Tj = 150 °C 0.6 0.5 0.4 0.10 0.3 0.2 VF(V) 0.01 0.0 DS12434 - Rev 2 0.5 1.0 1.5 2.0 2.5 3.0 Single pulse 0.1 3.5 0.0 1.E-04 t P(s) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 page 3/10 STTH1R06AFY Characteristics (curves) Figure 6. Peak reverse recovery current versus dlF/dt (typical values) IRM(A) 8 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 VR = 400 V Tj = 125 °C 7 IF = 2 x IF(AV) 6 IF = IF(AV) 5 IF = 0.5 x IF(AV) 4 IF = 0.25 x IF(AV) 3 2 1 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 8. Reverse recovery charges versus dIF/dt (typical values) 250 Figure 7. Reverse recovery time versus dlF/dt (typical values) IF = 2 x IF(AV) IF = IF(AV) IF = 0.5 x IF(AV) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 9. Softness factor versus dIF/dt (typical values) 8 VR = 400 V Tj = 125 °C 7 200 VR = 400 V Tj = 125 °C 0 QRR(nC) 225 t RR(ns) S factor IF = IF(AV) VR = 400 V Tj = 125 °C 6 IF = 2 x IF(AV) 175 5 150 4 125 IF = IF(AV) 3 100 IF = 0.5 x IF(AV) 75 2 50 1 dIF/dt(A/µs) 25 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 0 Figure 10. Relative variations of dynamic parameters versus junction temperature 1.0 100 150 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) 100 0.9 50 500 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C S factor 0.8 IRM 0.7 0.6 QRR 0.5 10 0.4 0.3 0.2 0.1 T j (°C) IF = IF(AV) VR = 400 V Reference: Tj = 125°C VR(V) 0.0 25 DS12434 - Rev 2 50 75 100 125 1 1 10 100 1000 page 4/10 STTH1R06AFY Characteristics (curves) Figure 12. Thermal resistance junction to ambient versus copper surface under each lead (typical values, epoxy printed board FR4, eCu = 35 µm) 200 Rth(j-a) (°C/W) SOD128-Flat 150 100 50 SCu (cm²) 0 0.0 DS12434 - Rev 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 page 5/10 STTH1R06AFY Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 SOD128Flat package information • • Epoxy meets UL94, V0 Lead-free package Figure 13. SOD128Flat package outline DS12434 - Rev 2 page 6/10 STTH1R06AFY SOD128Flat package information Table 5. SOD128Flat package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 0.93 1.03 0.037 0.041 b 1.69 1.81 0.067 0.071 c 0.10 0.22 0.004 0.009 D 2.30 2.50 0.091 0.098 E 4.60 4.80 0.181 0.189 E1 3.70 3.90 0.146 0.154 L 0.55 0.85 0.026 0.033 L1 0.30 typ. 0.012 typ. L2 0.45 typ. 0.018 typ. Figure 14. SOD128Flat footprint in mm (inches) DS12434 - Rev 2 page 7/10 STTH1R06AFY Ordering information 3 Ordering information Table 6. Ordering information DS12434 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STTH1R06AFY 1R6AY SOD128Flat 26.4 mg 3000 Tape and reel page 8/10 STTH1R06AFY Revision history Table 7. Document revision history DS12434 - Rev 2 Date Revision 01-Feb-2018 1 06-Dec-2018 2 Changes Initial release. Added Section Applications. Updated title of document. page 9/10 STTH1R06AFY IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12434 - Rev 2 page 10/10
STTH1R06AFY 价格&库存

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STTH1R06AFY
  •  国内价格 香港价格
  • 3000+1.283243000+0.15922
  • 6000+1.218016000+0.15113
  • 9000+1.131009000+0.14033
  • 30000+1.1049030000+0.13710
  • 75000+1.0767475000+0.13360

库存:17351

STTH1R06AFY
  •  国内价格 香港价格
  • 1+3.787161+0.46990
  • 10+3.2504710+0.40331
  • 100+2.26180100+0.28064
  • 500+1.76612500+0.21914
  • 1000+1.435481000+0.17811

库存:17351