STTH20003TV1

STTH20003 Datasheet 300 V ultrafast high voltage rectifier A1 K1 A2 K2 A2 Features • • • • Combines recovery and reverse voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance allow simpler layout Insulated package ISOTOP: – Insulated voltage: 2500 VRMS sine • ECOPACK®2 compliant K2 A1 K1 Applications ISOTOP • • • Switching diode Welding equipments Telecom power Description Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, the STTH20003 is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and Telecom power supplies. Product status link STTH20003 Product summary Symbol Value IF(AV) 2 x 100 A VRRM 300 V Tj (max.) 150 °C VF (typ.) 0.80 V trr (max.) 90 ns DS1796 - Rev 3 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com STTH20003 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 180 A IF(AV) Average forward current, δ = 0.5, square wave IFSM Surge non repetitive forward current Tstg Storage temperature range Tj TC = 110 °C 100 TC = 90 °C 200 tp = 10 ms sinusoidal 1000 A -55 to +150 °C 150 °C Maximum operating junction temperature A Table 2. Thermal resistance parameters Symbol Parameter Max. value Rth(j-c) Junction to case Rth(c) Coupling Per diode 0.55 Total 0.35 Unit °C/W 0.1 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 150 °C Min. VR = 300 V IF = 100 A Typ. - 0.2 - Max. Unit 200 µA 2 mA 1.20 0.80 0.95 V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the maximum conduction losses, use the following equation: P = 0.75 x IF(AV) + 0.0020 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS1796 - Rev 3 page 2/10 STTH20003 Characteristics Table 4. Dynamic characteristics (per diode) Symbol trr IRM Sfactor tfr VFP DS1796 - Rev 3 Parameters Reverse recovery time Reverse recovery current Softness factor Forward recovery time Forward recovery voltage Test conditions Tj = 25 °C IF = 0.5 A, Irr = 0.25 A, IR = 1 A - IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V - 90 - 18 A - 1400 ns - 5 V Tj = 125 °C IF = 100 A, dIF/dt = -200 A/μs, VR = 200 V Tj = 25 °C Min. Typ. Max. Unit IF = 100 A, dIF/dt = 200 A/μs, VFR = 1.1 x VF(max) - 50 ns 0.3 page 3/10 STTH20003 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (square waveform) IF (A) PF(AV)(W) 150 Figure 2. Forward voltage drop versus forward current (typical values) 1000.0 δ=0.2 125 δ=0.5 Tj = 125 °C δ=1.0 δ=0.1 100.0 δ=0.05 100 10.0 75 Tj = 25 °C 50 T 1.0 25 δ=tp/T IF(AV) (A) tp VF(V) 0.1 0 0 25 50 75 100 0.0 125 Figure 3. Forward voltage drop versus forward current (maximum values) 0.5 1.0 1.5 2.0 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration IF (A) Z th(j-c) / R th(j-c) 1000.0 1.0 0.9 100.0 0.8 Tj = 125 °C 0.7 0.6 0.5 10.0 0.4 Tj = 25 °C 0.3 1.0 0.2 0.1 VF(V) 0.1 0.0 DS1796 - Rev 3 0.5 1.0 t p(s) Single pulse 0.0 1.5 2.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 page 4/10 STTH20003 Characteristics (curves) Figure 5. Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Figure 6. Reverse recovery time versus dIF/dt (typical values) t RR(ns) 180 45 VR=200 V Tj=125 °C VR=200 V Tj=125 °C IF = 2 x IF(AV) 120 30 IF = 2 x IF(AV) IF = IF(AV) IF = IF(AV) 15 IF = IF(AV) / 2 60 IF = IF(AV) / 2 dI F/dt(A/µs) dI F/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values) SFACTOR 0.8 0 0 50 100 150 200 250 300 350 400 450 500 Figure 8. Relative variations of dynamic parameters versus junction temperature 2.4 IF=IF(AV) VR=200 V Reference: Tj=125 °C VR=200 V Tj=125 °C SFACTOR 0.6 1.6 0.4 0.8 IRM 0.2 T j (°C) dI F/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 0.0 500 25 50 75 100 125 Figure 9. Junction capacitance versus reverse voltage applied (typical values) C(pF) 10000 1000 VR(V) 100 1 DS1796 - Rev 3 10 100 1000 page 5/10 STTH20003 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 Isotop package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 1.3 N·m Maximum torque value: 1.5 N·m STMicroelectronics strongly recommend the use of the screws delivered with this product. The use of any other screws is entirely at the user's own risk and will invalidate the warranty. Figure 10. ISOTOP package outline E G2 M4 NUTS (×4) A C A1 E2 C2 F1 F Gate note 4 c H P1 D S G D1 B G1 E1 DS1796 - Rev 3 Ø P page 6/10 STTH20003 ISOTOP package information Table 5. ISOTOP package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 11.80 12.20 0.460 0.480 A1 8.90 9.10 0.350 0.358 B 7.80 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 DS1796 - Rev 3 Inches 24.80 0.976 G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 H -0.05 0.10 -0.002 0.004 Diam P 4.00 4.30 0.157 0.169 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 page 7/10 STTH20003 Ordering Information 3 Ordering Information Table 6. Ordering information DS1796 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STTH20003TV STTH20003TV ISOTOP 27 g without screws 10 with screws Tube page 8/10 STTH20003 Revision history Table 7. Document revision history DS1796 - Rev 3 Date Version Changes 1999 2C 5-Sep-2006 2 Reformatted to current standards. Thermal resistance updated in Table 2. 07-Jun-2018 3 Updated features in cover page and Table 1. Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise specified). Updated Section 1.1 Characteristics (curves). First issue. page 9/10 STTH20003 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS1796 - Rev 3 page 10/10