STTH2003CG

STTH2003C Hight frequency secondary rectifier Main product characteristics IF(AV) VRRM Tj (max) VF(max) trr (typ) A1 K A2 2 x 10 A 300 V 170° C 1V 35 ns K A2 K A1 A1 A2 Features and benefits ■ ■ ■ TO-220FPAB STTH2003CFP D2PAK STTH2003CG Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated packages: TO-220FPAB Electric insulation: 2000 V DC Capacitance: 12 pF A2 K A1 A1 K A2 Description Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AB, TO-220FPAB, I2PAK or D2PAK, this device is especially intended for secondary rectification. TO-220AB STTH2003CT I2PAK STTH2003CR Order codes Part Number STTH2003CT STTH2003CG STTH2003CG-TR STTH2003CF STTH2003CFP STTH2003CR Marking STTH2003CT STTH2003CG STTH2003CG STTH2003CF STTH2003CFP STTH2003CR March 2007 Rev 8 1/11 www.st.com 11 Characteristics STTH2003C 1 Table 1. Symbol VRRM IF(RMS) IF(peak) IFSM IRSM Tstg Tj Characteristics Absolute ratings (limiting values, per diode) Parameter Repetitive peak reverse voltage RMS forward voltage Peak working forward current δ = 0.5 I2PAK, D2PAK, TO-220AB TO-220FPAB Tc = 140°C Tc = 125°C tp = 10 ms sinusoidal tp = 10 µs square 110 5 -65 to + 175 175 A A °C °C Per diode Per device Value 300 30 10 20 Unit V A A Surge non repetitive forward current Non repetitive avalanche current Storage temperature range Maximum operating junction temperature Table 2. Symbol Thermal resistance Parameter I2PAK, D2PAK, TO-220AB Per diode Total Value (max) 2.5 1.3 4.6 °C/W Total I2PAK, D2PAK, TO-220AB Coupling 4 0.1 3.5 Unit Rth(j-c) Junction to case Per diode TO-220FPAB Rth(c) TO-220FPAB Coupling Table 3. Symbol IR(1) VF(2) Static electrical characteristics (per diode) Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Forward voltage drop Tj = 25° C Tj = 125° C VR = 300 V Min. Typ Max. 20 µA 30 300 1.25 IF = 10 A V 0.85 1 Unit 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % Note: To evaluate the conduction losses use the following equation: P = 0.75 x IF(AV) + 0.025 IF2(RMS)) 2/11 STTH2003C Table 4. Symbol Characteristics Recovery Characteristics Parameter Test conditions IF = 0.5 A IR = 1 A Irr = 0.25 A Min. Typ Max. 25 ns 35 230 3.5 8 0.3 ns V A Unit trr Reverse recovery time Tj = 25°C VR = 30 V IF = 1 A dIF/dt = -50 A/µs IF = 10 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax I F = 10 A dIF/dt = 100 A/µs tfr VFP IRM Sfactor Forward recovery time Peak forward voltage Reverse recovery current Softness factor Tj = 25°C Tj = 25°C Tj = 125°C VCC = 200V I F = 10 A dIF/dt = 200 A/µs 3/11 Characteristics STTH2003C Figure 1. Conduction losses versus average Figure 2. forward current (per diode) IFM(A) δ = 0.05 δ = 0.1 200 Forward voltage drop versus forward current (maximum values, per diode) P1(W) 14 δ = 0.2 δ = 0.5 100 Tj=125°C 12 10 8 6 4 2 δ=1 Tj=25°C 10 Tj=75°C T IF(AV)(A) 0 0 2 4 6 8 δ=tp/T 10 tp VFM(V) 12 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Figure 3. Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D2PAK / I2PAK) 1.0 Relative variation of thermal impedance junction to case versus pulse duration (TO-22FP0AB) Zth(j-c)/Rth(j-c) 1.0 Zth(j-c)/Rth(j-c) 0.8 δ = 0.5 0.8 δ = 0.5 0.6 0.6 δ = 0.2 δ = 0.1 0.4 δ = 0.2 δ = 0.1 0.4 T T 0.2 Single pulse 0.2 Single pulse tp(s) 0.0 1E-3 1E-2 1E-1 δ=tp/T tp tp(s) 1E+0 0.0 1E-2 1E-1 1E+0 δ=tp/T tp 1E+1 Figure 5. Peak reverse recovery current Figure 6. versus dIF/dt (90% confidence, per diode) trr(ns) 100 Reverse recovery time versus dIF/dt (90% confidence, per diode) IRM(A) 16 14 12 10 8 6 4 IF=0.5 x IF(AV) VR=200V Tj=125°C VR=200V Tj=125°C IF=2 x IF(AV) IF=IF(AV) 80 IF=IF(AV) 60 IF=2 x IF(AV) IF=0.5 x IF(AV) 40 20 2 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 0 0 50 100 150 dIF/dt(A/µs) 200 250 300 350 400 450 500 4/11 STTH2003C Characteristics Figure 7. Softness factor (tb/ta) versus dIF/dt Figure 8. (typical values, per diode) 2.4 2.2 VR=200V Tj=125°C Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C) S factor 0.60 0.50 0.40 0.30 0.20 0.10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IRM S factor dIF/dt(A/µs) 0.00 0 50 100 150 200 250 300 350 400 450 500 0.2 0.0 25 50 Tj(°C) 75 100 125 Figure 9. Transient peak forward voltage Figure 10. Forward recovery time versus dIF/dt versus dIF/dt (90% confidence, per (90% confidence, per diode) diode) (TO-220AB) tfr(ns) 500 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C VFP(V) 10 IF=IF(AV) Tj=125°C 8 400 6 300 4 200 2 100 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (D2PAK). Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 S(Cu)(cm²) 0 0 5 10 15 20 25 30 35 40 5/11 Package information STTH2003C 2 Package information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm Maximum torque value: 0.70 Nm I2PAK dimensions Dimensions Ref. Millimeters Min. A E L2 c2 Table 5. Inches Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.195 0.394 0.512 0.138 0.050 Max. 0.181 0.107 0.035 0.067 0.028 0.052 0.368 0.106 0.203 0.409 0.551 0.155 0.055 Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 A A1 b b1 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 D c c2 L1 L b1 A1 D e e1 E b e e1 c L L1 L2 6/11 STTH2003C Table 6. D2PAK dimensions Package information Dimensions Ref. Millimeters Min. A A E L2 C2 Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037 Typ. Max. 4.60 2.69 0.23 0.93 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0° 1.40 A1 A2 B D L L3 A1 B2 C C2 0.60 1.36 9.35 0.017 0.047 0.352 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 B2 B G C R D E 10.28 0.393 5.28 0.192 A2 2mm min. FLAT ZONE G L V2 15.85 0.590 1.40 1.75 0.050 0.055 L2 L3 R V2 8° 0° 8° Figure 12. Footprint (dimensions in millimeters) 16.90 10.30 1.30 5.08 8.90 3.70 7/11 Package information Table 7. TO-220AB dimensions Dimensions Ref. Millimeters Min. A C H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A STTH2003C Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 8/11 STTH2003C Table 8. TO-220FPAB dimensions Package information Dimensions Ref. Millimeters Min. A A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 E 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G L3 L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 9/11 Ordering information STTH2003C 3 Ordering information Part Number STTH2003CT STTH2003CG STTH2003CG-TR STTH2003CFP STTH2003CR Marking STTH2003CT STTH2003CG STTH2003CG STTH2003CFP STTH2003CR Package TO-220AB D2PAK D2PAK TO-220AB I2PAK Weight 2.2 g 1.48 g 1.48 g 2.08 g 1.49 g Base qty 50 50 500 50 50 Delivery mode Tube Tube Tape & reel Tube Tube 4 Revision history Date Aug-2003 26-Mar-2007 Revision 7D 8 Last release. Removed ISOWATT package. Description of Changes 10/11 STTH2003C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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