STTH200L04TV1

STTH200L04TV1 Ultrafast high voltage rectifier Features ■ Ultrafast switching ■ Low reverse current A1 K1 ■ Low thermal resistance A2 K2 ■ Reduces switching and conduction losses ■ Package insulation voltage: 2500 VRMS K1 A1 Description K2 The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. A2 ISOTOP STTH200L04TV1 Table 1. September 2011 Doc ID 12827 Rev 2 Device summary Symbol Value IF(AV) up to 2 x 120 A VRRM 400 V Tj (max) 150 °C VF (typ) 0.83 V trr (max) 50 ns 1/8 www.st.com 8 Characteristics 1 STTH200L04TV1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 200 A IF(AV) Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 3. Tc = 90 °C δ = 0.5 Per diode 100 Tc = 73 °C δ = 0.5 Per diode 120 tp = 10 ms sinusoidal 900 A -55 to + 150 °C 150 °C Value (max). Unit A Maximum operating junction temperature Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 0.50 Total 0.30 °C/W 0.10 When diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Symbol Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 150 °C Min. Max. Unit 100 VR = VRRM µA 100 1000 1.2 IF = 100 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.002 IF2(RMS) 2/8 Typ. Doc ID 12827 Rev 2 V 0.83 1.0 STTH200L04TV1 Table 5. Characteristics Dynamic characteristics (per diode) Symbol Parameter Test conditions trr Reverse recovery time Tj = 25 °C Min. Typ. Max. IF = 1 A dIF/dt = 50 A/µs VR = 30 V 75 100 IF = 1 A dIF/dt = 200 A/µs VR = 30 V 45 ns Reverse recovery current Tj = 125 °C IF = 100 A VR = 200 V dIF/dt = 100 A/µs Softness factor Tj = 125 °C VR = 200 V IF = 100 A dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25 °C dIF/dt = 200 A/µs IF = 100 A VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25 °C IF = 100 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax IRM Sfactor Figure 1. P(W) 160 δ=0.2 140 800 ns V Forward voltage drop versus forward current (per diode) 180 Tj=150°C (Maximum values) 140 δ=0.05 120 A 2.6 160 δ=0.1 18 I FM (A) 200 δ=1 δ=0.5 60 0.4 Conduction losses versus Figure 2. average forward current (per diode) 180 Unit 120 100 100 Tj=150°C (Typical values) 80 80 60 60 T 40 40 20 δ=tp/T I F(AV) (A) 0 0 10 Figure 3. 20 30 40 50 60 70 80 tp 0.0 Zth(j-c) /Rth( j-c) 50 Single pulse 40 0.7 35 0.6 30 0.5 25 0.4 20 0.3 15 0.2 10 1.E-01 1.E+01 0.8 1.0 1.2 1.4 IF=IF(AV) VR=200V Tj=125°C dIF/dt(A/µs) 0 1.E+00 0.6 Peak reverse recovery current versus dIF/dt (typical values, per diode) 5 t P (s) 1.E-02 0.4 IRM (A) 45 0.8 0.0 1.E-03 0.2 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration 0.1 Tj=25°C (Maximum values) VFM (V) 0 90 100 110 120 130 140 150 1.0 0.9 20 0 Doc ID 12827 Rev 2 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH200L04TV1 Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) Q rr (nC) t rr (ns) 300 3500 IF=IF(AV) VR=200V Tj=125°C 250 IF=IF(AV) VR=200V Tj=125°C 3000 2500 200 2000 150 1500 100 1000 50 500 dIF/dt(A/µs) 0 0 50 Figure 7. 0.8 100 150 200 250 300 400 450 500 Reverse recovery softness factor versus dIF/dt (typical values, per diode) S FACTOR 0 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature 1.6 IF < 2 x IF(AV) VR=200V Tj=125°C 0.7 SFACTOR 1.4 1.2 0.6 1.0 0.5 0.8 0.4 tRR 0.6 0.3 IRM 0.4 0.2 QRR 0.2 0.1 dIF/dt(A/µs) 0.0 0 4/8 dIF/dt(A/µs) 0 350 50 100 150 200 250 300 Tj (°C) IF=IF(AV) VR=200V Reference: Tj=125°C 0.0 350 400 450 500 25 Doc ID 12827 Rev 2 50 75 100 125 STTH200L04TV1 Figure 9. 6.0 Characteristics Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) Transient peak forward voltage versus dIF/dt (typical values, per diode) t fr (ns) VFP (V) 1800 IF=IF(AV) Tj=125°C 5.5 5.0 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 1600 4.5 1400 4.0 1200 3.5 1000 3.0 2.5 800 2.0 600 1.5 400 1.0 200 dIF/dt(A/µs) 0.5 0.0 dIF /dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25°C 1000 VR(V) 100 1 10 100 Doc ID 12827 Rev 2 1000 5/8 Package information 2 STTH200L04TV1 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. ISOTOP dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E G2 A C A1 C2 E2 F1 F P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 6/8 Doc ID 12827 Rev 2 STTH200L04TV1 3 Ordering information Ordering information Table 7. Ordering information Order code Marking Package STTH200L04TV1 STTH200L04TV1 ISOTOP 4 Weight Base qty 27 g 10 (without screws) (with screws) Delivery mode Tube Revision history Table 8. Document revision history Date Revision Changes 11-Aug-2006 1 First issue. 05-Sep-2011 2 Changed value of Rd to 0.002 in the conduction losses equation above Table 4. Reformatted to current standards. Doc ID 12827 Rev 2 7/8 STTH200L04TV1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 12827 Rev 2