STTH200L06TV1

STTH200L06TV Turbo 2 ultrafast high voltage rectifier Datasheet - production data A1 K1 A2 K2 Description This device, which uses ST Turbo 2 600 V technology, is especially suited for use in switching power supplies and industrial applications, like rectification and freewheeling diodes. A2 K2 Table 1: Device summary A1 K1 ISOTOP Features      Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package ISOTOP:  Insulated voltage: 2500 VRMS sine November 2017 Value IF(AV) up to 2 x 120 A VRRM 600 V Tj (max.) 150 °C VF (typ.) 0.95 V trr (max.) 80 ns TM: ISOTOP is a trademark of STMicroelectronics DocID10767 Rev 3 This is information on a product in full production. Symbol 1/10 www.st.com Characteristics 1 STTH200L06TV Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 180 A Average forward current, δ = 0.5 Tc = 65 °C, per diode 100 Tc = 35 °C, per diode 120 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 800 A Tstg Storage temperature range -55 to +150 °C 150 °C Maximum values Unit IF(AV) Tj A Maximum operating junction temperature Table 3: Thermal parameters Symbol Rth(j-c) Parameter Junction to case Per diode 0.60 Total 0.35 Coupling Rth(c) °C/W 0.1 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 100 A Min. Typ. - 100 100 - test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% 0.95 To evaluate the maximum conduction losses, use the following equation: P = 0.93 x IF(AV) + 0.0027 x IF2(RMS) 2/10 DocID10767 Rev 3 1000 1.55 Notes: (1)Pulse Max. 1.20 Unit µA V STTH200L06TV Characteristics Table 5: Dynamic characteristics (per diode) Symbol trr Parameter Reverse recovery time Test conditions Tj = 25 °C Min. Typ. Max. Unit IF = 0.5 A, Irr = 0.25 A, IR = 1 A - IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 85 120 15 20 A 700 ns ns IRM Reverse recovery current Tj = 125 °C IF = 100 A, dIF/dt = 400 A/μs, dIF/dt = 100 A/μs - tfr Forward recovery time Tj = 25 °C IF = 100 A, dIF/dt = 200 A/μs VFR = 1.1 x VFmax - VFP Forward recovery voltage Tj = 25 °C IF = 100 A, dIF/dt = 200 A/μs VFR = 1.1 x VFmax - DocID10767 Rev 3 80 3.4 V 3/10 Characteristics 1.1 STTH200L06TV Characteristics (curves) Figure 2: Forward voltage drop versus forward current (per diode) Figure 1: Conduction losses versus average forward current (per diode) 200 P(W) δ = 0.5 δ=1 180 δ = 0.2 160 δ = 0.1 140 δ = 0.05 120 100 80 60 T 40 20 δ =tp/T IF(AV)(A) tp 0 0 20 40 60 80 100 120 140 160 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c) /Rth(j-c) 60 IRM(A) VR = 400 V Tj = 125 °C 0.9 50 IF = 2 x IF(AV) 0.8 0.7 IF = IF(AV) 40 0.6 IF = 0.5 x IF(AV) 30 0.5 0.4 20 0.3 Single pulse 0.2 10 0.1 t P(s) 0.0 1.E-03 dIF/dt(A/µs) 0 1.E-02 1.E-01 1.E+00 1.E+01 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 1400 trr (ns) 0 150 200 250 300 350 400 450 500 Q rr (µC) VR = 400 V Tj = 125 °C 4.5 1200 100 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) 5.0 VR = 400 V Tj = 125 °C dIF/dt(A/µs) 50 IF = 2 x IF(AV) 4.0 1000 3.5 IF = 2 x IF(AV) IF = IF(AV) 3.0 800 2.5 600 IF = 0.5 x IF(AV) 2.0 1.5 400 1.0 200 0.5 IF = IF(AV) 0.0 0 4/10 dIF/dt(A/µs) IF = 0.5 x IF(AV) 0 50 100 150 200 250 300 350 400 450 500 DocID10767 Rev 3 0 100 200 300 400 500 STTH200L06TV Characteristics Figure 8: Relative variations of dynamic parameters versus junction temperature Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) 1.6 Sfactor IF < 2 x IF(AV) VR = 400 V Tj = 125 °C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 8 VFP(V) 600 IF = IF(AV) Tj = 125 °C 7 Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) IF = IF(AV) VFR = 1.1 x VF max. Tj = 125 °C 550 500 450 6 400 5 350 300 4 250 3 200 150 2 100 1 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) 10000 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1000 100 VR(V) 10 1 10 DocID10767 Rev 3 100 1000 5/10 500 Package information 2 STTH200L06TV Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 1.3 N·m Maximum torque value: 1.5 N·m STMicroelectronics strongly recommends the use of the screws delivered with this product. The use of any other screws is entirely at the user's own risk and will invalidate the warranty. 6/10 DocID10767 Rev 3 STTH200L06TV 2.1 Package information ISOTOP package information Figure 12: ISOTOP package outline DocID10767 Rev 3 7/10 Package information STTH200L06TV Table 6: ISOTOP package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 11.80 12.20 0.460 0.480 A1 8.90 9.10 0.350 0.358 B 7.80 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 E2 8/10 Inches 24.80 0.951 0.976 G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5 0.181 0.197 H -0.05 0.1 -0.002 0.004 Diam P 4 4.30 0.157 0.69 P1 4 4.30 0.157 0.69 S 30.10 30.30 1.185 1.193 DocID10767 Rev 3 STTH200L06TV 3 Ordering information Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH200L06TV1 STTH200L06TV1 ISOTOP 27 g (without screws) 10 (with screws) Tube Revision history Table 8: Document revision history Date Revision Changes 07-Sep-2004 1 First issue. 05-Sep-2011 2 Updated Figure 6. 06-Nov-2017 3 Updated Section "Features" and Section 2.1: "ISOTOP package information". DocID10767 Rev 3 9/10 STTH200L06TV IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 10/10 DocID10767 Rev 3