STTH212

STTH212 High voltage ultrafast diode Datasheet - production data Description A K SMB This device is an ultrafast diode based on a high voltage planar technology, it is perfectly suited for freewheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. K A A Housed in SMB and SMC packages, this diode reduces the losses in high switching frequency operations. K SMC Table 1: Device summary Features      Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology June 2017 DocID11497 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 2A VRRM 1200 V Tj 175 °C VF (typ.) 1.0 V trr (max.) 75 ns 1/11 www.st.com Characteristics 1 STTH212 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V V(RMS) RMS voltage 850 V IF(AV) Average forward current δ = 0.5, square wave 2 A IF(RMS) SMB Tlead = 90 °C SMC Tlead = 105 °C RMS forward current 10 IFSM Forward surge current tp = 8.3 ms 40 Tstg Storage temperature range A Tj -50 to +175 °C 175 °C Maximum Unit Maximum operating junction temperature Table 3: Thermal parameters Symbol Rth(j-l) Parameter Junction to lead SMB 25 SMC 20 °C/W Table 4: Static electrical characteristics (per diode) Symbol IR Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C VF Forward voltage drop Tj = 125 °C IF = 2 A Tj = 150 °C Min. Typ. Max. - 10 - 100 - 1.75 - 1.07 1.50 - 1.0 - Unit µA V To evaluate the conduction losses, use the following equation: P = 1.26 x IF(AV) + 0.12 x IF2(RMS) Table 5: Dynamic characteristics Symbol Parameter trr Reverse recovery time tfr Forward recovery time VFP 2/11 Forward recovery voltage Test conditions Tj = 25 °C Tj = 25 °C IF = 1 A; dIF/dt = -100 A/μs; VR = 30 V IF = 2 A; dIF/dt = 50 A/μs; VFR = 1.1 x VFmax DocID11497 Rev 2 Min. Typ. Max. - - 75 Unit ns - - 500 - - 30 V STTH212 Characteristics 1.1 Characteristics (curves) Figure 2: Forward voltage drop versus forward current Figure 1: Conduction losses versus average forward current 4.0 P(W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ =1 3.5 3.0 2.5 2.0 1.5 1.0 T 0.5 δ = tp /T IF(AV)(A) 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 tp 2.25 2.50 Figure 3: Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, SCU = 1 cm2) Zth(j-a) /Rth(j-a) 1.0 1.0 SMB Scu = 1 cm² 0.9 Figure 4: Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, SCU = 1 cm2) 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 SMC Scu = 1 cm² 0.2 0.1 0.1 t p(s) 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 IRM(A) 10 1.E+00 1.E+01 1.E+02 1.E+03 Figure 6: Reverse recovery time versus dIF/dt (typical values) 900 V R = 600 V T j = 125 °C t p(s) 0.0 1.E-01 Figure 5: Reverse recovery current versus dIF/dt (typical values) 11 Zth(j-a) /Rth(j-a) t RR(ns) VR = 600 V Tj = 125 °C 800 IF = 2 x IF(AV) 9 700 8 IF = IF(AV) 7 600 IF = 0.5 x IF(AV) 6 500 5 400 4 IF = 2 x IF(AV) IF = IF(AV) 300 3 200 2 1 100 dIF/dt(A/µs) IF = 0.5 x IF(AV) dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 200 DocID11497 Rev 2 0 50 100 150 200 250 300 350 400 450 3/11 500 Characteristics STTH212 Figure 7: Reverse recovery charges versus dIF/dt (typical values) Q RR(nC) 1400 SFACTOR 6.0 VR = 600 V Tj = 125 °C 1200 Figure 8: Softness factor versus dIF/dt (typical values) IF = IF(AV) VR = 600 V Tj = 125 °C 5.5 IF = 2 x IF(AV) 5.0 4.5 1000 4.0 800 3.5 IF = IF(AV) 3.0 600 2.5 2.0 IF = 0.5 x IF(AV) 400 1.5 1.0 200 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 0 50 100 150 200 250 300 350 400 450 0 500 Figure 9: Relative variations of dynamic parameters versus junction temperature 50 75 100 125 150 175 Figure 11: Forward recovery time versus dIF/dt (typical values) 250 IF = IF(AV) Tj = 125 °C dIF/dt(A/µs) 10 20 30 40 50 60 70 80 90 100 Figure 12: Junction capacitance versus reverse voltage applied (typical values) t FR(ns) 100 C(pF) F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C IF = IF(AV) VFR = 1.1 x VF max. Tj = 125 °C 380 225 VFP(V) 0 400 200 Figure 10: Transient peak forward voltage versus dIF/dt (typical values) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 420 25 360 340 320 10 300 280 260 240 220 VR(V) dIF/dt(A/µs) 1 200 0 4/11 20 40 60 80 100 DocID11497 Rev 2 1 10 100 1000 STTH212 Characteristics Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, eCU = 35 μm) 110 Rth(j-a) (°C/W) 100 90 80 SMB 70 60 SMC 50 40 30 20 10 SCu(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 DocID11497 Rev 2 3.5 4.0 4.5 5.0 5/11 Package information 2 STTH212 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  2.1 Epoxy meets UL94, V0 SMB package information Figure 14: SMB package outline 6/11 DocID11497 Rev 2 STTH212 Package information Table 6: SMB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 Figure 15: SMB recommended footprint 1.62 0.064 2.60 (0.102) 1.62 0.064 2.18 (0.086) 5.84 (0.230) millimeters (inches) DocID11497 Rev 2 7/11 Package information 2.2 STTH212 SMC package information Figure 16: SMC package outline Table 7: SMC package mechanical data Dimensions Ref. 8/11 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 2.90 3.20 0.1142 0.1260 c 0.15 0.40 0.0059 0.0157 D 5.55 6.25 0.2185 0.2461 E 7.75 8.15 0.3051 0.3209 E1 6.60 7.15 0.2598 0.2815 E2 4.40 4.70 0.1732 0.1850 L 0.75 1.50 0.0295 0.0591 DocID11497 Rev 2 STTH212 Package information Figure 17: SMC recommended footprint 5.11 (0.201) 1.54 (0.061) 1.54 (0.061) 3.14 (0.124) 8.19 (0.323) millimeters (inches) DocID11497 Rev 2 9/11 Ordering information 3 STTH212 Ordering information Table 8: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH212U STTH212S U22 SMB 0.110 g 2500 Tape and reel S12 SMC 0.243 g 2500 Tape and reel Revision history Table 9: Document revision history 10/11 Date Revision Changes 28-Jun-2005 1 First issue 12-Jun-2017 2 Updated cover image. Removed DO-201AD package. DocID11497 Rev 2 STTH212 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID11497 Rev 2 11/11