STTH212S

STTH212 High voltage ultrafast diode Main product characteristics A K IF(AV) VRRM Tj VF (typ) trr (max) 2A 1200 V 175°C 1.0 V 75 ns DO-201AD STTH212 Features and benefits ■ ■ ■ ■ ■ Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology SMB STTH212U SMC STTH212S Description The STTH212, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. Housed in axial, SMB, and SMC packages, this diode will reduce the losses in high switching freqency operations. Order codes Part Number STTH212 STTH212RL STTH212U STTH212S Marking STTH212 STTH212 U22 S12 June 2005 Rev 1 1/9 www.st.com 9 1 Electrical characteristics STTH212 1 Table 1. Symbol VRRM V(RMS) Electrical characteristics Absolute Ratings (limiting values) Parameter Repetitive peak reverse voltage RMS voltage DO-201AD IF(AV) Average forward current δ = 0.5 RMS forward current Forward surge current tp = 8.3ms Storage temperature range Maximum operating junction temperature SMB SMC Tl = 105°C Tl = 90°C Tl = 105°C 10 40 -50 to + 175 175 A A °C °C 2 A Value 1200 850 Unit V V IF(RMS) IFSM Tstg Tj DO-201AD, SMB, SMC DO-201AD, SMB, SMC Table 2. Symbol Thermal parameters Parameter L = 10 mm DO-201AD SMB SMC Value 20 25 20 75 °C/W °C/W Unit Rth(j-l) Junction to lead Rth(j-a) Junction to ambient L = 10 mm DO-201AD Table 3. Symbol IR Static Electrical Characteristics Parameter Reverse leakage current Test conditions Tj = 25°C Tj = 125°C Tj = 25°C VR = VRRM Min. Typ Max. 10 µA 100 1.75 IF = 2A 1.07 1.0 1.50 V Unit VF Forward voltage drop Tj = 125°C Tj = 150°C To evaluate the conduction losses use the following equation: P = 1.26 x IF(AV) + 0.12 IF2(RMS) 2/9 STTH212 1 Electrical characteristics Table 4. Symbol trr Dynamic Electrical Characteristics Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25°C Test conditions IF = 1A dIF/dt = -100 A/µs VR =30V Min. Typ Max. 75 500 30 Unit ns ns V tfr VFP Tj = 25°C IF = 2A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Figure 1. Conduction losses versus average forward current Figure 2. IFM(A) 50 Forward voltage drop versus forward current P(W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.00 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 45 40 δ=1 Tj=125°C (maximum values) 35 30 25 20 Tj=25°C (maximum values) Tj=125°C (typical values) T 15 10 IF(AV)(A) 0.25 0.50 0.75 1.00 1.25 1.50 1.75 δ=tp/T 2.00 2.25 tp 2.50 5 0 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 3.0 3.5 4.0 4.5 Figure 3. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, LLeads = 10mm) Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, SCU = 1cm2) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Zth(j-a)/Rth(j-a) DO-201AD Lleads=10mm 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Zth(j-a)/Rth(j-a) SMB SCu=1cm² tp(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.1 0.0 1.E-01 1.E+00 tp(s) 1.E+01 1.E+02 1.E+03 0.0 1.E-01 3/9 1 Electrical characteristics STTH212 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, SCU = 1cm2) Figure 6. Reverse recovery current versus dIF/dt (typical values) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Zth(j-a)/Rth(j-a) 11 SMC SCu=1cm² IRM(A) 10 9 8 I =I AV) F F( V R =600V Tj =125° C I =2 x I AV) F F( 7 I =0. x I AV ) 5 F( F 6 5 4 3 2 tp(s) 1.E+00 1.E+01 1.E+02 1.E+03 1 0 0 20 40 60 80 dlF/dt(A/µs) 100 120 140 160 180 200 0.0 1.E-01 Figure 7. trr(ns) 900 800 700 Reverse recovery time versus dIF/dt Figure 8. (typical values) 1400 VR =600V Tj=125 °C Reverse recovery charges versus dIF/dt (typical values) V R =600V Tj =125°C I =2 x I AV) F F( Qrr(nC) 1200 1000 600 500 400 300 200 100 0 0 50 100 150 IF =0.5 xF(AV) I IF x F(AV) =2 I IF F(AV) =I 800 600 I =I AV) F F( I =0. x I AV) 5 F( F 400 200 dlF/dt(A/µs) 200 250 300 350 400 450 500 dlF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature 1.0 SFACTOR 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 I =I AV) F F( V R =600V Tj =125° C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 I =I AV) F F( V R =600V R ef ence:Tj er =125°C Q RR IM R S FAC TO R dlF/dt(A/µs) 100 125 150 175 200 225 250 0.1 0.0 25 50 75 Tj(°C) 100 125 4/9 STTH212 1 Electrical characteristics Figure 11. Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 I =I AV) F F( Tj =125°C Figure 12. Forward recovery time versus dIF/dt (typical values) tFR(ns) 420 400 380 360 340 320 300 280 260 240 I =I AV) F F( V FR =1. x V F m ax. 1 Tj =125°C dlF/dt(A/µs) 10 20 30 40 50 60 70 80 90 100 220 200 0 20 dlF/dt(A/µs) 40 60 80 100 Figure 13. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz Vosc=30mVRMS Tj=25°C Figure 14. Thermal resistance versus lead length Rth(j-a)(°C/W) 100 90 80 70 60 Rth(j-a) DO201-AD 10 50 40 30 20 10 Rth(j-l) 1 1 10 VR(V) 100 1000 0 5 10 LLeads(mm) 15 20 25 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, eCU = 35µm) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 DO-201AD Figure 16. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, ecu = 35 µm) Rth(j-a)(°C/W) 110 100 90 80 70 60 50 40 30 20 SMC SMB SCu(cm2) 5 6 7 8 9 10 10 0 0.0 0.5 1.0 1.5 SCu(cm2) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5/9 2 Package mechanical data STTH212 2 Package mechanical data Table 5. SMB dimensions DIMENSIONS REF. Min. A1 A2 b c E E1 D L 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Millimeters Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Inches Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 Figure 17. SMB references to dimensions table E1 Figure 18. SMB footprint dimensions (in millimetres) 2.23 D 1.64 2.23 2.30 E A1 6.10 C A2 L b 6/9 STTH212 Table 6. SMC dimensions DIMENSIONS REF. Min. A1 A2 b c E E1 E2 D L 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Millimeters Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 2 Package mechanical data Inches Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 Figure 19. SMC references to dimensions table E1 Figure 20. SMC footprint dimensions (in millimetres) 2.20 4.25 2.20 D 3.30 E A1 8.65 C A2 E2 L b Table 7. DO-201AD dimensions DIMENSIONS B Note 1 A E E Note 1 B REF. Millimeters Min. Max. 9.5 5.3 1.3 1.25 Inches Min. 1.00 - Max. 0.37 0.21 0.051 0.048 ØD Note 2 A B C D E 25.4 - ØC Note: 1 The lead diameter D is not controlled over zone E. 2 The minimum length which must stay straight between the right angles after bending is 15 mm (0.59 inch). 7/9 3 Ordering information STTH212 3 Ordering information Part Number STTH212 STTH212RL STTH212U STTH212S Marking STTH212 DO-201AD STTH212 U22 S12 SMB SMC 0.11 g 0.243 g 1.12 g 1900 2500 2500 Tape & reel Tape & reel Tape & reel Package Weight Base qty 600 Delivery mode Ammopack 4 Revision history Date 28-Jun-2005 Revision 1 First issue. Description of Changes 8/9 STTH212 4 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9