STTH2L06

STTH2L06 High efficiency ultrafast diode Features A ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K Description DO-41 STTH2L06 The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection. SMA STTH2L06A Table 1. October 2009 Doc ID10758 Rev 2 SMB STTH2L06U Device summary Symbol Value IF(AV) 2A VRRM 600 V Tj 175 °C VF(typ) 0.85 V trr (max) 60 ns 1/9 www.st.com 9 Characteristics 1 STTH2L06 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 3. Symbol V 7 A 2 SMA Tl = 100 °C 2 SMB Tl = 115 °C 2 DO-41 tp = 10 ms sinusoidal 45 A A 35 -65 to + 175 °C 175 °C Maximum Unit Maximum operating junction temperature Thermal resistance Parameter Junction to lead L = 5 mm 35 SMA 30 SMB 25 °C/W Static electrical characteristics Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj= 150 °C Tj = 25 °C Tj = 150 °C Min. Typ. Max. Unit 2 VR = VRRM µA 12 85 1.3 IF = 2 A V 0.85 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation: P = 0.89 x IF(AV) + 0.08 IF2(RMS) 2/9 600 Tl = 90 °C DO-41 Table 4. Unit DO-41 SMA / SMB Symbol Rth(j-l) Value Doc ID10758 Rev 2 1.05 STTH2L06 Table 5. Characteristics Dynamic electrical characteristics Symbol Test conditions Parameter trr Reverse recovery time tfr Forward recovery time Forward recovery voltage VFP Figure 1. Min. Tj = 25 °C IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V Tj = 25 °C IF = 2 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax Conduction losses vs average forward current Figure 2. P(W) Typ. Max. Unit 60 85 ns 100 ns 9 V Forward voltage drop vs forward current IFM(A) 2.5 δ = 0.1 δ = 0.2 10 δ = 0.5 9 δ = 0.05 2.0 Tj=150°C (maximum values) 8 7 δ=1 1.5 6 Tj=150°C (typical values) 5 4 1.0 Tj=25°C (maximum values) 3 T 2 0.5 δ=tp/T IF(AV)(A) tp 1 VFM(V) 0 0.0 0.00 0.25 Figure 3. 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 Relative variation of thermal impedance junction to case vs pulse duration (SMA - SCU = 1 cm2) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 Figure 4. Zth(j-a)/Rth(j-a) Zth(j-a)/Rth(j-a) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.1 Relative variation of thermal impedance junction to case vs pulse duration (SMB - SCU = 1 cm2) 0.2 Single pulse 0.1 tp(s) 0.0 1.E-02 Single pulse tp(s) 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-03 Doc ID10758 Rev 2 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 3/9 Characteristics Figure 5. STTH2L06 Relative variation of thermal impedance junction to case vs pulse duration (DO-41) Figure 6. Peak reverse recovery current vs dIF/dt (typical values) IRM(A) Zth(j-a)/Rth(j-a) 15.0 1.0 VR=400V Tj=125°C 0.9 IF=2 x IF(AV) 12.5 0.8 IF=IF(AV) 0.7 10.0 IF=0.5 x IF(AV) 0.6 7.5 0.5 0.4 5.0 0.3 0.2 2.5 Single pulse 0.1 tp(s) dIF/dt(A/µs) 0.0 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Reverse recovery time vs dIF/dt (typical values) Figure 7. 0 50 Figure 8. trr(ns) 100 150 200 250 300 350 400 450 500 Reverse recovery charges vs dIF/dt (typical values) Qrr(nC) 800 500 VR=400V Tj=125°C VR=400V Tj=125°C 450 700 400 IF=2 x IF(AV) 600 350 500 300 IF=IF(AV) IF=2 x IF(AV) 250 400 IF=IF(AV) 200 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 300 150 200 100 100 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 Figure 9. 100 150 200 250 300 350 400 450 0 500 100 200 300 400 500 Relative variations of dynamic Figure 10. Transient peak forward voltage vs parameters vs junction temperature dIF/dt (typical values) VFP(V) 1.4 25 IF=IF(AV) VR=400V Reference: Tj=125°C 1.2 IF=IF(AV) Tj=125°C 20 1.0 15 0.8 QRR 0.6 trr 10 IRM 0.4 5 0.2 Tj(°C) dIF/dt(A/µs) 0 0.0 25 4/9 50 75 100 125 0 Doc ID10758 Rev 2 50 100 150 200 250 STTH2L06 Characteristics Figure 11. Forward recovery time vs dIF/dt (typical values) Figure 12. Junction capacitance vs reverse voltage applied (typical values) C(pF) tfr(ns) 400 100 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 350 F=1MHz VOSC=30mVRMS Tj=25°C 300 250 200 10 150 100 50 dIF/dt(A/µs) VR(V) 0 1 0 50 100 150 200 250 Figure 13. Thermal resistance junction to ambient vs copper surface under tab (epoxy FR4, Cu = 35 µm) 1 10 100 1000 Figure 14. Thermal resistance vs lead lengh (DO-41) Rth(°C/W) Rth(j-a)(°C/W) 120 120 110 Rth(j-a) 100 100 90 SMA 80 80 SMB 70 60 60 Rth(j-l) 50 40 40 30 20 20 10 SCU(cm²) Llead(mm) 0 0 0 1 2 3 4 5 5 Doc ID10758 Rev 2 10 15 20 25 5/9 Package information 2 STTH2L06 Package information ● Epoxy meets UL 94, V0 ● Band indicates cathode ● Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. DO-41 (plastic) dimensions Dimensions Ref. Table 7. C A Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 25.4 D 0.71 ØD ØB C Millimeters 1 0.86 0.028 0.034 SMA dimensions Dimensions Ref. Millimeters Inches E1 D E A1 A2 C L 6/9 Min. Max. Min. Max. A1 1.90 2.45 0.075 0.094 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 E 4.80 5.35 0.189 0.211 E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 b Doc ID10758 Rev 2 STTH2L06 Package information Figure 15. Footprint (dimensions in mm) 2.63 1.4 1.4 1.64 5.43 Table 8. SMB dimensions Dimensions Ref. Millimeters Inches E1 D E A1 A2 C L b Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 L 0.75 1.50 0.030 0.059 Figure 16. Footprint (dimensions in mm) 1.62 2.60 1.62 2.18 5.84 Doc ID10758 Rev 2 7/9 Ordering information 3 Ordering information Table 9. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH2L06 STTH2L06 DO-41 0.34 g 2000 Ammopack STTH2L06RL STTH2L06 DO-41 0.34 g 5000 Tape and reel STTH2L06A L6A SMA 0.068 g 5000 Tape and reel STTH2L06U L6U SMB 0.11 g 2500 Tape and reel Revision history Table 10. 8/9 STTH2L06 Document revision history Date Revision Changes 07-Sep-2004 1 First issue. 30-Sep-2009 2 Updated table 6 package dimensions. Doc ID10758 Rev 2 STTH2L06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID10758 Rev 2 9/9