STTH3003CW

® STTH3003CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY 2 x 15 A 300 V 175 °C 1V 40 ns K A1 A2 TO-247 DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature Tc = 135°C δ = 0.5 Per diode Per device Value 300 30 15 30 140 7 -65 +175 +175 Unit V A A A A °C °C tp = 10 ms sinusoidal tp = 20 µs square October 1999 - Ed: 5A 1/5 STTH3003CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 2.0 1.05 0.1 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.017 IF2(RMS) 0.85 40 Min. Typ. Max. 40 400 1.25 1 V Unit µA VF ** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM Tests conditions Irr = 0.25 A IR = 1A Tj = 25°C Min. Typ. Max. 30 40 Tj = 25°C Tj = 125°C 0.3 8.5 300 3.5 ns V A Unit ns dIF/dt = - 50 A/µs VR = 30V IF = 15 A dIF/dt = 100 A/µs VFR = 1.1 x VF max. Vcc = 200 V IF = 15 A dIF/dt = 200A/µs 2/5 STTH3003CW Fig. 1: Conduction losses versus average current (per diode). P1(W) 20 18 16 14 12 10 8 6 4 2 0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200 100 δ=1 Tj=125°C Tj=25°C 10 T Tj=75°C IF(av) (A) 0 2 4 6 8 10 12 14 δ=tp/T tp VFM(V) 16 18 20 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 δ = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 16 14 12 10 8 IF=0.5*IF(av) VR=200V Tj=125°C IF=IF(av) IF=2*IF(av) δ = 0.2 δ = 0.1 Single pulse 6 T 4 tp tp(s) 1E-2 1E-1 δ=tp/T 2 0 0 50 dIF/dt(A/µs) 100 150 200 250 300 350 400 450 500 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 100 80 60 40 20 0 0 IF=0.5*IF(av) IF=2*IF(av) IF=IF(av) VR=200V Tj=125°C Fig. 6: Softness factor versus dIF/dt (typical values, per diode). S factor 0.60 0.50 0.40 0.30 0.20 VR=200V Tj=125°C dIF/dt(A/µs) 0.10 0.00 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450 500 3/5 STTH3003CW Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). VFP(V) 8 7 6 IF=IF(av) Tj=125°C S factor 5 4 3 IRM 2 1 Tj(°C) 50 75 100 125 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 450 400 350 300 250 200 150 100 50 0 VFR=1.1*VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 4/5 STTH3003CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Weight 4.36g Base qty 30 Ordering code Marking Package STTH3003CW STTH3003CW TO-247 Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL 94,V0 Delivery mode Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5