STTH3006DPI

® STTH3006DPI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) 30 A 600 V 150 °C 2.4 V 6.7 A 25 ns 1 2 1 2 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=16pF s s s s s s DOP3I (insulated) DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal δ = 0.15 Tc = 120°C Value 600 32 180 50 -65 +150 + 150 Unit V A A A °C °C October 2003 - Ed: 2A 1/5 STTH3006DPI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case thermal resistance Test conditions Value 1.3 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C VF ** Forward voltage drop IF = 30 A Tj = 25°C Tj = 150°C Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% Min. Typ. Max. 40 Unit µA 60 400 3.6 V 1.95 2.4 To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.023 IF2(RMS) DYNAMIC CHARACTERISTICS Symbol trr Parameter Reverse recovery IF = 0.5 A time IR = 1 A Tests Conditions Irr = 0.25 A Tj = 25°C Min. Typ. 25 45 Tj = 125°C 6.7 0.3 145 8.5 A nC Max. Unit ns IF = 1 A dIF/dt = - 50 A/µs VR = 30 V IRM S Qrr Reverse recovery VR = 400 V IF = 30 A current dIF/dt = -200 A/µs Reverse recovery softness factor Reverse recovery charges TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Tests Conditions Tj = 25°C Min. Typ. Max. 400 6 Unit ns V Forward recovery IF = 30 A dIF/dt = 100 A/µs time VFR = 1.1 x VF max Transient peak forward recovery voltage IF = 30 A dIF/dt = 100 A/µs Tj = 25°C 2/5 STTH3006DPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) δ = 0.1 δ = 0.05 δ = 0.2 200 P(W) 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 80 60 δ = 0.5 180 160 140 Tj=125°C (maximum values) δ=1 120 100 Tj=125°C (typical values) Tj=25°C (maximum values) T 40 20 IF(AV)(A) δ=tp/T 35 tp 0 40 0 1 2 3 VFM(V) 4 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). IRM(A) 16 VR=400V Tj=125°C 14 12 IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse δ = 0.2 δ = 0.1 δ = 0.5 10 8 6 IF=0.25 x IF(AV) T 4 2 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 1.E+00 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 90 80 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 450 500 IF=2 x IF(AV) IF=IF(AV) VR=400V Tj=125°C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 300 275 250 IF=IF(AV) VR=400V Tj=125°C IF=2 x IF(AV) 225 IF=0.5 x IF(AV) 200 175 150 125 100 75 50 IF=0.5 x IF(AV) dIF/dt(A/µs) 25 0 0 50 100 150 dIF/dt(A/µs) 200 250 300 350 400 450 500 3/5 STTH3006DPI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). S 0.40 IF=IF(AV) VR=400V Tj=125°C Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 3.00 2.75 2.50 2.25 2.00 1.75 S IF=IF(AV) VR=400V Reference: Tj=125°C 0.35 0.30 1.50 1.25 1.00 0.75 IRM 0.25 0.50 0.25 dIF/dt(A/µs) 0.20 0 50 100 150 200 250 300 350 400 450 500 Tj(°C) 25 50 75 100 125 0.00 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). VFP(V) 12 11 10 9 8 IF=IF(AV) Tj=125°C Fig. 10: Forward recovery time versus dIF/dt (typical values). tfr(ns) 800 700 600 500 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 100 300 200 400 dIF/dt(A/µs) 0 0 100 dIF/dt(A/µs) 200 300 400 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 4/5 STTH3006DPI PACKAGE MECHANICAL DATA DOP3I DIMENSIONS REF. Millimeters Min. A B C D E F G H K L N P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 3.4 4.08 10.8 1.20 Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 3.65 4.17 11.3 1.40 Inches Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.134 0.161 0.425 0.047 Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.144 0.164 0.444 0.055 4.60 typ. 0.181 typ. Ordering code STTH3006DPI s Marking STTH3006DPI Package DOP3I Weight 4.46 g. Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. 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