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STTH3010W

STTH3010W

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-247

  • 描述:

    DIODE GEN PURP 1KV 30A DO247

  • 数据手册
  • 价格&库存
STTH3010W 数据手册
STTH3010 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 30 A VRRM 1000 V Tj 175° C VF (typ) 1.30 V trr (typ) 42 ns A A K TO-220AC STTH3010D Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated package: – DOP3I Electrical insulation = 2500 VRMS Capacitance = 12 pF K A A K DO-247 STTH3010W K DOP3I STTH3010PI Order codes Description Part Number Marking The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. STTH3010D STTH3010D STTH3010W STTH3010W STTH3010PI STTH3010PI Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/10 www.st.com 10 Characteristics STTH3010 1 Characteristics Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current TO-220 / DO-247 Tc = 105° C DOP3I Tc = 65° C IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Table 2. IR(1) 1000 V 50 A 30 A 300 A 180 A -65 to + 175 °C 175 °C Maximum operating junction temperature Thermal parameters Parameter Rth(j-c) Symbol Unit tp = 5 µs, F = 5 kHz square Symbol Table 3. Value Value TO-220 / DO-247 1.1 DOP3I 1.8 Junction to case °C/W Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ VF Forward voltage drop Tj = 100° C Unit µA 10 100 2 IF = 30 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.013 IF2(RMS) 2/10 Max. 15 VR = VRRM Tj = 25° C (2) Unit 1.4 1.8 1.3 1.7 V STTH3010 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Unit 100 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 53 70 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 42 55 Reverse recovery current IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 24 32 A S Softness factor IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 1 tfr Forward recovery time dIF/dt = 100 A/µs IF = 30 A VFR = 1.5 x VFmax, Tj = 25° C 450 ns Forward recovery voltage IF = 30 A, dIF/dt = 100 A/µs, Tj = 25° C Reverse recovery time trr IRM VFP Figure 1. Conduction losses versus average current Figure 2. 5 ns V Forward voltage drop versus forward current IFM(A) P(W) 200 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 =0.5 =0.2 =1 180 =0.1 160 Tj=150°C (Maximum values) 140 =0.05 120 Tj=150°C (Typical values) 100 80 Tj=25°C (Maximum values) 60 T 40 20 IF(AV)(A) 0 5 Figure 3. 10 15 20 25 30 35 40 Relative variation of thermal impedance junction to case versus pulse duration 0.5 Figure 4. Zth(j-c)/Rth(j-c) 1.0 1.5 2.0 2.5 3.0 3.5 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 1.0 0.9 VFM(V) 0 0.0 60 Single pulse VR=600V Tj=125°C 50 0.8 0.7 IF= 2 x IF(AV) IF= IF(AV) 40 0.6 0.5 30 IF=0.5 x IF(AV) 0.4 20 0.3 0.2 10 0.1 0.0 1.E-03 tp(s) dIF/dt(A/µs) 0 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 3/10 Characteristics Figure 5. STTH3010 Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) trr(ns) 7 700 VR=600V Tj=125°C 600 IF= 2 x IF(AV) 500 VR=600V Tj=125°C 6 IF= 2 x IF(AV) 5 IF= IF(AV) 400 4 IF= IF(AV ) 300 3 200 2 IF=0.5 x IF(AV) 100 1 IF=0.5 x IF(AV) dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature S factor 1.50 2.0 IF = 2 x IF(AV) VR=600V Tj=125°C 1.8 IF = IF(AV) VR=600V Reference: Tj=125°C Sfactor 1.6 1.25 1.4 1.2 1.0 1.00 0.8 tRR 0.6 0.75 0.4 dIF/dt(A/µs) 0.50 0 4/10 50 100 150 200 250 300 350 400 450 500 IRM 0.2 QRR 0.0 25 50 Tj(°C) 75 100 125 STTH3010 Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) tfr(ns) 25 800 IF = IF(AV) Tj=125°C IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 700 20 600 15 500 10 400 5 300 dIF/dt(A/µs) 0 dIF/dt(A/µs) 200 0 100 200 300 400 500 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/10 Package information 2 STTH3010 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC) Recommended torque value: 0.80 Nm (SOD93, DOP31, and DO-247) Maximum torque value: 0.7 Nm (TO-220AC) Maximum torque value: 1.0 Nm (SOD93, DOP31, and DO-247) Table 5. DO-247 dimensions DIMENSIONS REF. V Dia V Millimeters Inches Min. Max Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 2.00 0.078 A H F3 2.00 G L5 2.40 0.078 10.90 0.094 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.169 L L2 L4 F2 L3 L1 F3 L2 D V2 L3 0.145 18.50 14.20 0.728 14.80 0.559 0.582 F G M E L4 34.60 1.362 L5 5.50 0.216 M 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 6/10 2.00 3.55 3.65 0.139 0.143 STTH3010 Package information Table 6. T0-220AC dimensions DIMENSIONS REF. A H2 ØI C L5 L7 L6 L2 F1 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 D L9 L4 L2 16.40 typ. 0.645 typ. F M E G L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 7/10 Package information STTH3010 Table 7. DOP3I dimensions DIMENSIONS REF. E E1 c ØP G Y D L c1 b Q e Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 1.20 1.40 0.047 0.055 c 1.45 1.55 0.057 0.061 c1 0.50 0.70 0.020 0.028 D 12.15 13.10 0.474 0.516 E 15.10 15.50 0.594 0.610 E1 7.55 7.75 0.297 0.305 e 10.80 11.30 0.425 0.445 G 20.4 21.10 0.815 0.831 L 14.35 15.60 0.565 0.614 P 4.08 4.17 0.161 0.164 Q 2.70 2.90 0.106 0.114 A R Millimeters R Y 4.60 typ. 15.80 16.50 0.181 typ. 0.622 0.650 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 STTH3010 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH3010D STTH3010D TO-220AC 1.86 g 50 Tube STTH3010PI STTH3010PI DOP3I 4.46 g 30 Tube STTH3010W STTH3010W DO-247 4.4 g 30 Tube Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. 9/10 STTH3010 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10
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