STTH302

® STTH302 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 3A 200 V 175 °C 0.75 V 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature s s s s DESCRIPTION The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF (AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TI = 107°C tp = 10ms DO-201AD STTH302 Value 200 δ = 0.5 Sinusoidal 3 130 - 65 to + 175 175 Unit V A A °C °C THERMAL PARAMETERS Symbol Rth (j-a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. November 2001 - Ed: 1A 1/5 STTH302 STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Test Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min. Typ. Max. 3 Unit µA VR = VRRM 4 IF = 3A 0.66 75 0.95 0.75 V To evaluate the maximum conduction losses use the following equations: P = 0.60 x IF(AV) + 0.05 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Test conditions Tj = 25°C Tj = 25°C Tj = 25°C 70 1.6 Min. Typ. Max. 35 Unit ns ns V Reverse recovery IF = 1A dIF/dt = - 50A/µs time VR = 30V Forward recovery IF = 3A dIF/dt = 50A/µs time VFR = 1.1 x VF max Forward recovery voltage 2/5 STTH302 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 3.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l) 2.5 δ=1 3.0 2.5 2.0 2.0 1.5 1.5 1.0 T Rth(j-a)=75°C/W 1.0 0.5 0.5 IF(av)(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 δ=tp/T 3.0 tp Tamb(°C) 0.0 3.5 0 25 50 75 100 125 150 175 Fig. 3: Thermal resistance versus lead length. Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm). Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 δ = 0.5 Rth(°C/W) 90 80 70 60 50 40 30 20 10 0 5 10 15 20 25 Rth(j-l) Rth(j-a) 0.4 0.3 0.2 δ = 0.2 δ = 0.1 Single pulse T Lleads(mm) 0.1 tp(s) 1.E+00 1.E+01 0.0 1.E-01 δ=tp/T 1.E+02 tp 1.E+03 Fig. 5: Forward voltage drop versus forward current. IFM(A) 100.0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25°C Tj=125°C (Maximum values) 10.0 Tj=125°C (Typical values) Tj=25°C (Maximum values) 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 1 10 VR(V) 100 1000 3/5 STTH302 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 100 90 80 70 60 50 40 Tj=25°C Tj=125°C IF=3A VR=100V Tj=125°C Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 6 IF=3A VR=100V Tj=125°C 5 4 Tj=125°C 3 Tj=25°C 30 20 10 0 1 10 100 1000 2 1 dIF/dt(A/µs) 0 1 10 dIF/dt(A/µs) 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 5.0 4.5 4.0 3.5 3.0 2.5 IRM IF=3A dIF/dt=200A/µs VR=100V Qrr 2.0 1.5 trr Tj(°C) 1.0 25 50 75 100 125 150 175 4/5 STTH302 PACKAGE MECHANICAL DATA DO-201AD B A B ØC note 1 E E note 1 ØD ØD note 2 DIMENSIONS REF. A B ∅C ∅D E 25.40 5.30 1.30 1.25 Millimeters Min. Max. 9.50 Inches Min. 1.000 0.209 0.051 0.049 NOTES 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Max. 0.374 Ordering code STTH302 STTH302RL s Marking STTH302 STTH302 Package DO-201AD DO-201AD Weight 1.16 g 1.16 g Base qty 600 1900 Delivery mode Ammopack Tape and reel s White band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5