STTH302S

STTH302S ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature ■ SMC ■ ■ ■ DESCRIPTION The STTH302S, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(AV) Average forward current Tl = 107°C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature Value Unit 200 V 3 A 100 A - 65 + 175 °C 175 °C δ =0.5 THERMAL PARAMETERS Symbol Rth (j-l) Parameter Junction to lead April 2002 - Ed: 1A Maximum Unit 20 °C/W 1/5 STTH302S STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR* Tests conditions Reverse leakage current VF** Tj = 25°C Min. VR = VRRM Tj = 125°C Forward voltage drop Typ. 4 Tj = 25°C IF = 3 A Tj = 125°C IF = 3 A Max. Unit 3 µA 75 0.95 0.66 V 0.75 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.05 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tj = 25°C IF =1 A Irr = -50 A/µs VR = 30V tfr Forward recovery time Tj = 25°C IF = 3 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax 70 ns VFP Forward recovery voltage Tj = 25°C IF = 3 A dIF/dt = 50 A/µs 1.6 V 2/5 Tests conditions Min. Typ. Max. Unit 35 ns STTH302S Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ = 0.5) PF(AV)(W) IF(AV)(A) 3.0 δ = 0.05 δ = 0.1 3.5 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 δ=1 2.0 2.5 2.0 1.5 1.5 1.0 Rth(j-a)=75°C/W S=1cm² 1.0 T 0.5 0.5 IF(AV)(A) δ=tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 Tamb(°C) tp 3.0 0.0 0 3.5 Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4). 25 Fig. 4: current. 50 75 100 125 150 175 Forward voltage drop versus forward IFM(A) Zth(j-a)/Rth(j-a) 100.0 1.0 0.9 Tj=125°C (Maximum values) 0.8 0.7 Tj=125°C (Typical values) 10.0 δ = 0.5 0.6 Tj=25°C (Maximum values) 0.5 0.4 δ = 0.2 0.3 1.0 δ = 0.1 T 0.2 0.1 Single pulse tp(s) δ=tp/T 0.0 1.E-01 1.E+00 1.E+01 1.E+02 VFM(V) tp 0.1 0.0 1.E+03 Fig. 5: Junction capacitance versus reverse voltage applied (typical values). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). C(pF) tRR(ns) 100 100 F=1MHz Vosc=30mV Tj=25°C IF=3A VR=100V 90 80 70 Tj=125°C 60 50 40 Tj=25°C 30 20 VR(V) 10 10 dIF/dt(A/µs) 0 1 10 100 1000 1 10 100 1000 3/5 STTH302S Fig. 7: Peak reverse recovery current versus dIF/dt (90% confidence). Fig. 8: Reverse recovery charges versus dI F/dt (90% confidence). IRM(A) QRR(nC) 6.0 100 IF=3A VR=100V IF=3A VR=100V 90 5.0 80 70 4.0 Tj=125°C 60 Tj=125°C 3.0 50 40 2.0 30 Tj=25°C 1.0 Tj=25°C 20 10 dIF/dt(A/µs) 0.0 dIF/dt(A/µs) 0 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. 1 10 100 1000 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, e = 35µm). Rth(j-a)(°C/W) IRM; tRR; QRR [Tj] / IRM; tRR; QRR [Tj = 25°C] 100 3.5 IF=3A dIF/dt=200A/µs VR=100V 90 80 3.0 70 QRR 60 2.5 50 40 2.0 30 tRR 20 1.5 Tj(°C) 10 IRM S(cm²) 0 1.0 25 4/5 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 STTH302S PACKAGE MECHANICAL DATA SMC DIMENSIONS REF. E1 D E A1 A2 C E2 L b Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 FOOTPRINT 3.3 2.0 ■ 4.2 2.0 Ordering code Marking Package Weight Base qty Delivery mode STTH302S U32 SMC 0.245 g 2500 Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5