STTH30L06GG-TR

® STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (max) FEATURES AND BENEFITS ■ ■ ■ ■ Up to 2 x 20 A 600 V 175°C 0.95 V 55 ns A1 K A2 A1 K A2 A1 K A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses TO-220AB STTH30L06CT K TO-247 STTH30L06CW DESCRIPTION The STTH30L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH30L06CT STTH30L06CW A2 A1 D2PAK STTH30L06CG Marking STTH30L06CT STTH30L06CW Part Number STTH30L06CG STTH30L06GG-TR Marking STTH30L06CG STTH30L06CG Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current δ = 0.5 Tc = 140°C Per diode Tc = 125°C Per device Tc = 120°C Per diode Tc = 110°C Per device tp = 10ms sinusoidal Value 600 30 15 30 20 40 130 -65 to + 175 175 Unit V A A IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature A °C °C September 2004 REV. 1 1/8 STTH30L06C Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 1.7 1.15 0.6 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 40 IF = 15A 0.95 IF = 30A 1.15 Tj = 150°C Forward voltage drop Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Pulse test: ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.94 x IF(AV) + 0.017 I F (RMS) * tp = 5 ms, δ < 2% Min. Typ Max. 15 400 1.55 1.2 1.76 1.45 Unit µA Reverse leakage current Tj = 25°C V 2 Table 6: Dynamic Characteristics (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25°C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/µs VR =30V Tj = 125°C IF = 15A VR = 400V dIF/dt = 100 A/µs Tj = 25°C Tj = 25°C IF = 15A dIF/dt = 100 A/µs VFR = 1.1 x VFmax IF = 15A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 3.0 60 8.5 Min. Typ Max. Unit 55 85 12 300 A ns V ns 2/8 STTH30L06C Figure 1: Conduction losses versus average forward current (per diode) P(W) 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 100 Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 90 80 Tj=150°C (maximum values) δ=1 70 60 50 40 Tj=150°C (typical values) Tj=25°C (maximum values) T 30 20 IF(AV)(A) δ=tp/T tp 10 0 0.0 0.5 1.0 1.5 VFM(V) 2.0 2.5 3.0 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 35 VR=400V Tj=125°C 30 25 IF=0.5 x IF(AV) IF=IF(AV) IF=2 x IF(AV) 20 15 10 5 T 0.2 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 0 1.E+00 0 50 100 150 dIF/dt(A/µs) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) 800 700 600 500 400 IF=IF(AV) IF=2 x IF(AV) VR=400V Tj=125°C Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(nC) 1800 1600 1400 1200 IF=IF(AV) VR=400V Tj=125°C IF=2 x IF(AV) 1000 800 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 300 200 100 600 400 200 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 100 dIF/dt(A/µs) 200 300 400 500 3/8 STTH30L06C Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 1.6 1.4 1.2 1.0 1.0 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 QRR IF=IF(AV) VR=400V Reference: Tj=125°C IF< 2 x IF(AV) VR=400V Tj=125°C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.4 S factor 1.2 trr IRM dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 0.0 25 50 Tj(°C) 75 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) Tj=125°C Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) 260 240 220 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C dIF/dt(A/µs) 20 0 0 100 dIF/dt(A/µs) 200 300 400 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C Figure 12: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35µm) (D2PAK) Rth(j-a)(°C/W) 80 70 60 50 100 40 30 20 10 VR(V) 10 1 10 100 1000 0 0 5 10 15 SCU(cm²) 20 25 30 35 40 4/8 STTH30L06C Figure 13: TO-247 Package Mechanical Data REF. V V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 5/8 STTH30L06C Figure 14: D2PAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° REF. A E L2 C2 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESSTHAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Figure 15: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/8 STTH30L06C Figure 16: TO-220AB Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Table 7: Ordering Information Ordering type Marking STTH30L06CT STTH30L06CT STTH30L06CG STTH30L06CG STTH30L06CG-TR STTH30L06CG STTH30L06CW STTH30L06CW ■ ■ ■ ■ Package TO-220AB D2PAK D2PAK TO-247 Weight 2.23 g 1.48 g 1.48 g 4.46 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & eel Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. (TO-220FPAC) / 0.55 m.N. (TO-220AB) Maximum torque value: 1.0 m.N. (TO-220FPAC) / 0.70 m.N. (TO-220AB) Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 7/8 STTH30L06C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8