STTH30R03CW

® STTH30R03CW/CG HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM IRM (typ.) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s 2 x 15 A 300 V 4.5A 175 °C 1.4 V 35 ns K A1 A2 TO-247 STTH30R03CW s s Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 120°C δ = 0.5 Per diode Per device A1 A2 D PAK STTH30R03CG 2 Value 300 30 15 30 120 - 65 + 175 + 175 Unit V A A A °C °C tp = 10 ms sinusoidal July 2002 - Ed: 1C 1/6 STTH30R03CW/CG THERMAL AND POWER DATA Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 2.0 1.2 0.4 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1 x IF(AV) + 0.026 IF2(RMS) 1.1 30 Min. Typ. Max. 20 200 1.9 1.4 V Unit µA VF ** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A Tests conditions Irr = 0.25 A IR = 1A Tj = 25°C Min. Typ. 20 35 Tj = 125°C 4.5 0.4 6 A Max. Unit ns IF = 1 A dIF/dt = - 50 A/µs VR = 30V IRM S factor VR = 200 V IF = 15A dIF/dt = - 200A/µs TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Tests conditions Tj = 25°C IF = 15A dIF/dt = 100A/µs measured at 1.1xVFmax Tj = 25°C IF = 15A dIF/dt = 100A/µs Min. Typ. Max. 300 3.5 Unit ns V 2/5 STTH30R03CW/CG Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward current. IFM(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 P(W) 30 25 δ=1 200 100 Tj=125°C Typical values Tj=25°C Maximum values Tj=125°C Maximum values 20 15 10 T 10 5 IF(av) (A) 0 0 2 4 6 8 10 12 14 δ=tp/T tp VFM(V) 20 16 18 1 0 1 1 2 2 3 3 4 4 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse δ = 0.5 IRM(A) 12 10 8 6 IF= 0.5 x IF(av) VR=200V Tj=125°C IF=IF(av) IF= 2 x IF(av) δ = 0.2 δ = 0.1 T 4 2 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 tp(s) 1E-2 1E-1 0.0 1E-3 δ=tp/T tp 1E+0 0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). trr(ns) 80 70 60 50 40 30 20 10 0 0 50 IF=0.5 x IF(av) IF=2 x IF(av) IF=IF(av) VR=200V Tj=125°C Qrr(nC) 150 125 100 75 50 25 0 0 50 IF=IF(av) VR=200V Tj=125°C IF=2 x IF(av) IF=0.5 x IF(av) dIF/dt(A/µs) 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 100 150 200 250 300 350 400 450 500 3/6 STTH30R03CW/CG Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125°C). S factor 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 50 dIF/dt(A/µs) IF < 2 x IF(av) VR=200V Tj=125°C 100 150 200 250 300 350 400 450 500 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 S factor IRM Tj(°C) 50 75 100 125 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 20 18 16 14 12 10 8 6 4 2 0 IF=IF(av) Tj=125°C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 500 450 400 350 300 250 200 150 100 50 0 VFR=1.1 x VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 4/6 STTH30R03CW/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STTH30R03CW/CG PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 s s s s Ordering code Marking STTH30R03CW STTH30R03CW STTH30R03CG STTH30R03CG STTH30R03CG-TR STTH30R03CG Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL 94,V0 Package TO-247 D2PAK D2PAK Weight 4.36g 1.48g 1.48g Base qty 30 50 1000 Delivery mode Tube Tube Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6