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STTH30R06W

STTH30R06W

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-247

  • 描述:

    DIODE GEN PURP 600V 30A DO247

  • 数据手册
  • 价格&库存
STTH30R06W 数据手册
STTH30R06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections. It is also intended for use as a freewheeling diode in power supplies and other power switching applications. Table 1: Device summary Features     Ultrafast switching Low reverse current Low thermal resistance Reduce switching and conduction losses June 2017 DocID10938 Rev 3 This is information on a product in full production. Symbol Value IF(AV) 30 A VRRM 600 V Tj 175 °C VF (typ.) 1.10 V trr (max.) 50 ns 1/11 www.st.com Characteristics 1 STTH30R06 Characteristics Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 50 A IF(AV) Average forward current δ = 0.5, square wave DO-247 TC = 115 °C DOP-3I TC = 85 °C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A Tstg Storage temperature range -65 to +175 °C 175 °C Tj Maximum operating junction temperature Table 3: Thermal parameters Symbol Parameter Max. value Junction to case Rth(j-c) DO-247 1.1 DOP-3I 1.7 Unit °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 30 A Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.07 x IF(AV) + 0.011 x IF2(RMS) 2/11 DocID10938 Rev 3 Min. Typ. - 25 80 - Max. 800 1.85 1.10 1.40 Unit µA V STTH30R06 Characteristics Table 5: Dynamic electrical characteristics Symbol trr IRM tfr VFP Parameter Test conditions Reverse recovery time Reverse recovery current Typ. Max. Unit IF = 0.5 A IR = 1 A Irr = 0.25 A - IF = 1 A VR = 30 V dlF/dt = 50 A/µs - 50 70 Tj = 125 °C IF = 30 A VR = 400 V dlF/dt = 100 A/µs - 8 11 A IF = 30 A VFR = 1.1 x VFmax. dlF/dt = 100 A/µs 500 ns Tj = 25 °C Tj = 25 °C Forward recovery time Forward recovery voltage Min. DocID10938 Rev 3 50 ns - 2.5 V 3/11 Characteristics 1.1 STTH30R06 Characteristics (curves) Figure 2: Forward voltage drop versus forward current Figure 1: Conduction losses versus average forward current PF( AV )(W) 55 δ = 0.5 50 δ = 0.2 45 δ = 0.1 40 δ=1 δ = 0.05 35 30 25 20 15 T 10 5 IF( AV ) ( A) δ=tp/T tp 0 0 5 10 15 20 25 30 35 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Figure 4: Peak reverse recovery current versus dlF/dt (typical values) Zth (j-c) /Rth(j-c) IRM(A) 1.0 30 25 0.8 IF =2 x I F(AV ) VR = 400 V Tj = 125°C 0.9 IF =I F(AV ) IF =0.5 x I F(AV ) 0.7 20 IF =0.25 x I F(AV ) 0.6 15 0.5 0.4 10 0.3 5 0.2 Single pulse t P (s) 0.1 dIF/dt(A/µs) 0 0 0.0 1.E -03 1.E -02 1.E -01 50 100 150 200 250 300 350 400 450 500 1.E +00 Figure 5: Reverse recovery time versus dlF/dt (typical values) Figure 6: Reverse recovery charges versus dlF/dt (typical values) Qrr(µC) trr(ns) 3.0 20 0 VR = 400 V Tj = 125°C VR = 400 V Tj = 125°C 2.5 IF =2 x I F(AV ) IF =2 x I F(AV ) 15 0 2.0 IF =I F(AV ) IF =I F(AV ) IF =0.5 x I F(AV ) 10 0 1.5 IF =0.5 x I F(AV ) 1.0 50 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 2 00 40 0 60 0 800 10 00 0.0 0 4/11 DocID10938 Rev 3 200 400 600 800 1000 STTH30R06 Characteristics Figure 7: Softness factor versus dlF/dt (typical values) Figure 8: Relative variation of dynamic parameters versus junction temperature Sfactor 2.50 0.6 IF ≤ 2 x IF(AV) VR = 400 V Tj = 125°C 0.5 IF≤ 2 x IF (AV) VR = 400 V Reference: T j = 125 °C SFATOR 2.25 2.00 1.75 0.4 1.50 1.25 0.3 1.00 0.2 IRM 0.75 0.50 0.1 QRR 0.25 dIF/dt(A/µs) 0.0 Tj (°C) 0.00 0 50 100 150 200 250 300 350 400 450 5 00 25 Figure 9: Transient peak forward voltage versus dlF/dt (typical values, per diode) 50 75 100 125 Figure 10: Forward recovery time versus dlF/dt (typical values) t FR(ns) VFP(V) 8.0 800 7.5 IF = IF(AV) Tj = 125°C 7.0 IF ≤ 2 x IF(AV) VR = 1.1 x V max. F Tj = 125°C 700 6.5 6.0 600 5.5 5.0 500 4.5 4.0 400 3.5 3.0 300 2.5 2.0 200 1.5 1.0 100 0.5 dIF/dt(A/µs) 0.0 dIF/dt(A/µs) 0 0 10 0 20 0 300 400 500 0 10 0 200 300 400 Figure 11: Junction capacitance versus reverse voltage applied (typical values) 1000 C(pF) F=1MHz VOSC =30mVRMS Tj=25°C 100 VR(V) 10 1 10 DocID10938 Rev 3 100 1000 5/11 50 0 Package information 2 STTH30R06 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.      6/11 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m (DO-247) Recommended torque value: 0.9 to 1.2 N·m (DOP3I) Maximum torque value: 1.0 N·m (DO-247) DocID10938 Rev 3 Package information STTH30R06 2.1 DO-247 package information Figure 12: DO-247 package outline DocID10938 Rev 3 7/11 Package information STTH30R06 Table 6: DO-247 package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 F3 2.00 typ. 2.00 G 0.078 typ. 2.40 0.078 10.90 typ. 0.094 0.429 typ. H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 L3 18.50 typ. 14.20 0.728 typ. 14.80 0.559 0.582 L4 34.60 typ. 1.362 typ. L5 5.50 typ. 0.216 typ. M 2.00 V 3.00 0.078 5° V2 Dia. 8/11 Inches 5° 60° 3.55 0.118 60° 3.65 DocID10938 Rev 3 0.139 0.143 Package information STTH30R06 2.2 DOP-3I package information Figure 13: DOP-3I package outline Table 7: DOP-3I package mechanical data Dimensions Ref. A b Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.20 1.40 0.047 0.055 c 1.45 1.55 0.057 0.061 c1 0.50 0.70 0.020 0.028 D 12.15 13.10 0.474 0.516 E 15.10 15.50 0.594 0.610 E1 7.55 7.75 0.297 0.305 e 10.80 11.30 0.425 0.445 G 20.4 21.10 0.815 0.831 L 14.35 15.60 0.565 0.614 P 4.08 4.17 0.161 0.164 Q 2.70 2.90 0.106 0.114 R Y 4.60 15.80 0.181 16.50 DocID10938 Rev 3 0.622 0.650 9/11 Ordering information 3 STTH30R06 Ordering information Table 8: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH30R06PI STTH30R06W STTH30R06PI DOP-3I 4.46 g 30 Tube STTH30R06W DO-247 4.40 g 30 Tube Revision history Table 9: Document revision history 10/11 Date Revision Changes 18-Oct-2004 1 Initial release. 07-Sep-2011 2 Updated IFSM from 160 A to 300 A. 17-May-2017 3 Removed SOD-93 and TO-220AC package information. DocID10938 Rev 3 STTH30R06 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID10938 Rev 3 11/11
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