STTH3R02AFY

STTH3R02-Y Automotive ultrafast rectifier Datasheet - production data Description The STTH3R02-Y, implementing ST’s new 200 V planar technology, is especially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications in automotive functions. $ . $ Table 1. Device summary . 62')ODW Symbol Value IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (typ) 0.72 V Trr (typ) 16 ns Features • Low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable February 2015 This is information on a product in full production. DocID027545 Rev 1 1/8 www.st.com Characteristics 1 STTH3R02-Y Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol 1. Parameter Value Unit 200 V VRRM Repetitive peak reverse voltage Tj = -40 °C IF(AV) Average forward current, square waveform TL = 109 °C δ = 0.5 3 A IFSM Surge current non repetitive forward current tp = 8.3 ms sinusoidal 80 A Tstg Storage temperature range -65 to + 175 °C Tj(1) Operating temperature range -40 to + 175 °C 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Rth(j-l) Parameter Typ. Max. Unit 15 23 °C/W Junction to lead Table 4. Static electrical characteristics Symbol Parameter Tests conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 150 °C Typ. Max. Unit 1.6 VR = VRRM IF = 3A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.71 x IF(AV) + 0.04 x IF2(RMS) 2/8 Min. DocID027545 Rev 1 µA 2 16 0.91 1.02 0.72 0.83 V STTH3R02-Y Characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Tests conditions Tj = 25 °C trr Reverse recovery time Tj = 125 °C QRR Reverse recovery charge IRM Reverse recovery current Typ. Max. IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V 16 21 IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V 23 IF = 3 A, dIF/dt = 200 A/µs, VR = 160 V 24 IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V Tj = 125 °C Figure 1. Average forward power dissipation versus average forward current 3)$9 : į  į  į  į  Unit ns 50 nC 3.5 A Figure 2. Forward voltage drop versus forward current (typical values)    Min. ,)$ į    7  ƒ& M    7  ƒ& M 7    į WS7      WS   ,) $9   Figure 3. Forward voltage drop versus forward current (maximum values)  9 9 ) $ ,)$           Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration  =WKMO5WKMO    7  ƒ&  M   7  ƒ&  M       6LQJOHSXOVH  9 9 )          W3V  ( DocID027545 Rev 1 ( ( ( ( ( 3/8 8 Characteristics STTH3R02-Y Figure 5. Reverse recovery charges versus dIF/dt (typical values) 455Q& Figure 6. Reverse recovery time versus dIF/dt (typical values)   ,  $ ) 95 9 W55QV ,  $ ) 95 9 7  ƒ& M   7  ƒ& M     7  ƒ& M   GO GW$—V )     Figure 7. Peak reverse recovery current versus dIF/dt (typical values) ,50$  M GO GW$—V )    455,50>7M@455,50>7M ƒ&@ ,  $ ) 95 9    Figure 8. Dynamic parameters versus junction temperature  ,  $ ) 95 9  7  ƒ& 7  ƒ& M  , 50    4 55      7  ƒ& M    GO GW$—V )   7 ƒ& M        Figure 9. Junction capacitance versus reverse Figure 10. Thermal resistance junction to voltage applied (typical values) ambient versus copper surface under each lead (typical values) 5WKMDƒ&: &S)   (SR[\SULQWHGERDUG)5FRSSHUWKLFNQHVV —P ) 0+] 926& P9506  62')ODW  7  ƒ& M    4/8 6 FPð 959   &8     DocID027545 Rev 1           STTH3R02-Y 2 Package information Package information • Epoxy meets UL94,V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 11. SOD128Flat package outline / / / $ F ' ( ( E DocID027545 Rev 1 5/8 8 Package information STTH3R02-Y Table 6. SOD128Flat package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. A 0.93 1.03 0.037 0.041 b 1.69 1.81 0.067 0.071 c 0.10 0.22 0.004 0.009 D 2.30 2.50 0.091 0.098 E 4.60 4.80 0.181 0.189 E1 3.70 3.90 0.146 0.154 L 0.55 0.85 0.026 0.033 L1 0.30 0.012 L2 0.45 0.018 Figure 12. SOD128Flat footprint, dimensions in mm (inches)     6/8 Max.   DocID027545 Rev 1   STTH3R02-Y 3 Ordering information Ordering information Table 7. Ordering information 4 Order codes Marking Package Weight Base qty Delivery mode STTH3R02AFY 3R2AY SOD128Flat 26.4 mg 3000 Tape and reel Revision history Table 8. Document revision history Date Revision 24-Feb-2015 1 Changes Initial release. DocID027545 Rev 1 7/8 8 STTH3R02-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 8/8 DocID027545 Rev 1