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STTH3R02RL

STTH3R02RL

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-201AD

  • 描述:

    DIODE GEN PURP 200V 3A DO201AD

  • 数据手册
  • 价格&库存
STTH3R02RL 数据手册
STTH3R02 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 3A 200 V 175° C 0.7 V 16 ns A K Features and benefits ■ ■ ■ ■ A K DO-201AD STTH3R02 A K DO-15 STTH3R02Q Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature A Description The STTH3R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-201AD, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. K SMC STTH3R02S Order codes Part Number STTH3R02 STTH3R02RL STTH3R02Q STTH3R02QRL STTH3R02S Marking STTH3R02 STTH3R02 STTH3R02 STTH3R02 3R2S October 2006 Rev 2 www.st.com 1/9 Characteristics STTH3R02 1 Table 1. Symbol VRRM IFRM IF(RMS) Characteristics Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage Repetitive peak forward RMS forward current SMC DO-15 Tlead = 50° C IF(AV) Average forward current, δ = 0.5 DO-201AD Tlead = 90° C SMC Tc = 110° C IFSM Tstg Tj TL Surge non repetitive forward current Storage temperature range Maximum operating junction temperature(1) Maximum lead temperature for soldering during 10 s at 4 mm from case tp = 10 ms Sinusoidal 75 -65 to + 175 175 230 A °C °C °C 3 A 70 current(1) tp = 5 µs, F = 5 kHz DO-201AD / DO-15 Value 200 110 70 A Unit V A 1. On infinite heatsink with 10 mm lead length Table 2. Symbol Rth(j-l) Rth(j-c) Thermal parameters Parameter DO-15 Junction to lead Junction to case Lead Length = 10 mm on infinite heatsink DO-201AD SMC 30 20 ° C/W Value 45 Unit Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM IF = 9 A 0.89 IF = 3 A 0.76 0.70 Min. Typ Max. 3 µA 3 30 1.20 1.0 V 0.85 0.80 Unit VF(2) Forward voltage drop Tj = 25° C Tj = 100° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.04 IF2(RMS) 2/9 STTH3R02 Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C Min. Typ 24 16 3.5 40 1.9 Max. 30 ns 20 4.5 A ns V Unit trr Reverse recovery time IRM tfr VFP Reverse recovery current Forward recovery time Forward recovery voltage IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125° C IF = 3 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25° C IF = 3 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. IM(A) 100 peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) IFM(A) T IM 50 80 δ d=tp/T tp 40 60 P = 10 W 30 40 P=5W P=3W 20 20 10 Tj=150°C Tj=25°C 0 0.0 δ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration - DO-201AD (Epoxy printed circuit board FR4, eCU = 35 µm) IFM(A) 50 1.0 0.9 Zth(j-a) /Rth(j-a) DO-201AD Lleads=10mm 40 0.8 0.7 30 0.6 0.5 20 Tj=150°C 0.4 0.3 Tj=25°C 10 0.2 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 0.1 0.0 1.E-01 Single pulse tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 3/9 Characteristics STTH3R02 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration - DO-15 (Epoxy printed circuit board FR4, eCU = 35 µm) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration - SMC (Epoxy printed circuit board FR4, eCU = 35 µm) Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-01 Single pulse DO-15 Lleads=10mm Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 SMC Scu=1cm² tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.1 0.0 Single pulse tP(s) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-03 1.E-02 Figure 7. Junction capacitance versus reverse applied voltage (typical values) F=1MHz Vosc=30mVRMS Tj=25°C Figure 8. Reverse recovery charges versus dIF/dt (typical values) C(pF) 100 QRR(nC) 80 70 60 50 IF=3A VR=160V 10 40 30 20 10 VR(V) Tj=125°C Tj=25°C dIF/dt(A/µs) 10 100 1000 1 1 10 100 1000 0 Figure 9. Reverse recovery time versus dIF/dt Figure 10. Peak reverse recovery current (typical values) versus dIF/dt (typical values) IRM(A) 8 IF=3A VR=160V IF=3A VR=160V tRR(ns) 60 50 7 6 40 5 Tj=125°C 30 Tj=25°C 4 Tj=125°C 20 3 2 10 1 Tj=25°C dIF/dt(A/µs) 0 10 100 1000 0 10 100 dIF/dt(A/µs) 1000 4/9 STTH3R02 Ordering information scheme Figure 11. Dynamic parameters versus junction temperature Figure 12. Thermal resistance junction to ambient versus copper surface under each lead for DO-15 and DO-201AD (Epoxy printed circuit board FR4, eCU = 35µm) Rth(j-a) (°C/W) QRR; IRM [T j] / Q RR; IRM [T j=125°C] 1.4 1.2 1.0 0.8 0.6 QRR IRM IF=3A VR=160V 100 90 80 70 60 50 DO-201AD DO-15 40 30 20 0.4 0.2 Tj(°C) 0.0 25 50 75 100 125 150 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 SCu(cm²) 4.0 4.5 5.0 Figure 13. Thermal resistance versus copper surface under each lead for SMC (Epoxy printed circuit board FR4, eCU = 35µm) Rth(j-a) (°C/W) 100 SMC Figure 14. Thermal resistance versus lead length for DO-201AD package Rth(°C/W) 100 90 80 70 Rth(j-a) DO-201AD 80 60 60 50 40 40 Rth(j-l) 30 20 SCU(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 10 0 5 10 15 20 25 Lleads(mm) 2 Ordering information scheme STTH Ultrafast switching diode Average forward current 3=3A 3R 02 XXX Model R Repetitive peak reverse voltage 02 = 200 V Package Blank = DO-201 in Ammopack RL = DO-201 in Tape and reel Q = DO-15 in Ammopack QRL = DO-15 in Tape and reel S= SMC in Tape and reel 5/9 Package information STTH3R02 3 Package information ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) DO-201AD Dimensions Dimensions Ref. Millimeters Min. B Note 1 Table 5. Inches Min. Max. 0.374 1.000 Max. 9.50 A E E Note 1 B A B 25.40 ØD Note 2 C D E Notes 5.30 1.30 1.25 0.209 0.051 0.049 ØC 1 - The lead diameter ø D is not controlled over zone E 2 - The minimum length which must stay straight between the right angles after bending is 0.59"(15mm) Table 6. DO-15 dimensions Dimensions C A C Ref. Millimeters Min. Max. 6.75 3.53 31 0.88 Inches Min. 0.238 0.116 1.024 0.028 Max. 0.266 0.139 1.220 0.035 A D B 6.05 2.95 26 0.71 B C D 6/9 STTH3R02 Table 7. SMC dimensions Package information Dimensions Ref. E1 Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 A1 D 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 A2 b E c E A1 E1 b C E2 L A2 E2 D L Figure 15. SMC footprint (dimensions in mm) 2.20 4.25 2.20 3.30 8.65 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STTH3R02 4 Ordering information Part Number STTH3R02 STTH3R02RL STTH3R02Q STTH3R02QRL STTH3R02S Marking STTH3R02 STTH3R02 STTH3R02 STTH3R02 3R2S Package DO-201AD DO-201AD DO-15 DO-15 SMC Weight 1.16 g 1.16 g 0.4 g 0.4 g 0.243 g Base qty 600 1900 1000 6000 2500 Delivery mode Ammopack Tape and reel Ammopack Tape and reel Tape and reel 5 Revision history Date 03-May-2006 10-Oct-2006 Revision 1 2 First issue Added SMC package Description of Changes 8/9 STTH3R02 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9
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