STTH506DTI

STTH506DTI ® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS 1 IF(AV) 5A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 3.6 A trr (typ.) 12 ns 2 2 1 Insulated TO-220AC FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN Package Capacitance: C=7pF ■ DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ■ ■ ■ ■ ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 14 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 60 A Ipeak Peak current waveform δ = 0.15 Tc = 140°C 8 A -65 +150 °C + 150 °C Tstg Tj Storage temperature range Maximum operating junction temperature October 2003 - Ed: 2A 1/5 STTH506DTI THERMAL AND POWER DATA Symbol Parameter Test conditions Rth (j-c) Junction to case thermal resistance Value Unit 3.0 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current VR = VRRM Min. Tj = 25°C 8 Tj = 125°C VF ** Forward voltage drop IF = 5 A Typ. Max. Unit 6 µA 60 3.6 Tj = 25°C 1.95 Tj = 150°C V 2.4 Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.14 IF2(RMS) DYNAMIC CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tests Conditions IF = 0.5 A IR = 1 A Irr = 0.25 A Min. Typ. 12 Tj = 25°C Reverse recovery VR = 400 V IF = 5 A current dIF/dt = -200 A/µs Unit ns 25 IF = 1 A dIF/dt = - 50 A/µs VR = 30 V IRM Max. 3.6 Tj = 125°C 4.5 A S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 45 nC TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Parameter Tests Conditions Min. Typ. Max. Unit Forward recovery IF = 5 A dIF/dt = 100 A/µs time VFR = 1.1 x VF max Tj = 25°C 100 ns Transient peak forward recovery voltage Tj = 25°C 7 V IF = 5 A dIF/dt = 100 A/µs STTH506DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 20 18 100 δ = 0.2 δ = 0.1 90 δ = 0.5 16 80 δ = 0.05 Tj=125°C (maximum values) 70 14 12 60 δ=1 10 50 8 40 6 Tj=125°C (typical values) Tj=25°C (maximum values) 30 T 4 20 2 IF(AV)(A) 0 1 2 3 10 δ=tp/T 0 4 5 VFM(V) tp 0 6 7 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 2 3 4 5 6 7 8 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). Zth(j-c)/Rth(j-c) IRM(A) 1.0 9 0.9 8 0.8 VR=400V Tj=125°C IF=2 x IF(AV) 7 IF=IF(AV) IF=0.5 x IF(AV) 0.7 6 δ = 0.5 0.6 IF=0.25 x IF(AV) 5 0.5 4 0.4 δ = 0.2 0.3 δ = 0.1 3 T 2 0.2 Single pulse 0.1 δ=tp/T tp(s) 1 tp dIF/dt(A/µs) 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 5: Reverse recovery time versus dIF/dt (typical values). 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (typical values). trr(ns) Qrr(nC) 100 50 VR=400V Tj=125°C 45 VR=400V Tj=125°C 90 IF=2 x IF(AV) IF=2 x IF(AV) IF=IF(AV) 80 40 IF=IF(AV) 35 70 IF=0.5 x IF(AV) 30 60 25 50 20 40 15 30 10 20 5 IF=0.5 x IF(AV) 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH506TDI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). S 2.50 0.60 IF=IF(AV) VR=400V Tj=125°C IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 2.00 0.50 S 1.75 1.50 1.25 0.40 1.00 0.75 IRM 0.50 0.30 0.25 dIF/dt(A/µs) Tj(°C) 0.00 0.20 25 0 50 100 150 200 250 300 350 400 450 50 75 100 125 500 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). Fig. 10: Forward recovery time versus dIF/dt (typical values). VFP(V) tfr(ns) 200 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 140 120 100 80 60 40 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25°C 10 VR(V) 1 1 4/5 10 100 1000 0 100 200 300 400 500 STTH506DTI PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS B C REF. b2 Millimeters Inches Min. Typ. Max. Min. Typ. Max. A L F I c2 a1 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 a2 M c1 e ■ ■ ■ ■ 0.625 0.147 13.00 l2 b1 15.90 0.598 3.75 a2 A l4 15.20 a1 M 2.60 0.102 Ordering code Marking Package Weight Base qty Delivery mode STTH506DTI STTH506DTI TO-220AC 2.3 g. 50 Tube Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5