STTH50W03CW

STTH50W03C Turbo 2 ultrafast high voltage rectifier Datasheet  production data Description The STTH50W03C uses ST Turbo 2 300 V technology. It is especially suited to be used for DC/DC and DC/AC converters in the secondary stage of MIG/MMA/TIG welding machines. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. A1 K A2 Table 1. Device summary A1 K A2 TO-247 STTH50W03CW Symbol Value IF(AV) 2 x 25 A VRRM 300 V trr (typ) 20 ns Tj 175 °C VF (typ) 1V Features  Ultrafast switching  Low reverse recovery current  Low thermal resistance  Reduces switching losses  ECOPACK®2 compliant component August 2013 This is information on a product in full production. DocID024734 Rev1 1/9 www.st.com Characteristics 1 STTH50W03C Characteristics Table 2. Absolute ratings (limiting values per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 40 A IF(AV) Average forward current,  = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Tc = 105 °C Per diode 25 Tc = 100°C Per device 50 A tp = 10 ms sinusoidal 200 A -65 to + 175 °C + 175 °C Maximum operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Per diode Rth(j-c) Junction to case Rth(c) Coupling 1.8 1 Total Unit °C / W 0.2 When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Static electrical characteristics per diode Symbol IR (1) Parameter Test conditions Tj = 25 °C Reverse leakage current Tj = 125° C Tj = 25° C VF (2) Tj = 150 °C Forward voltage drop Tj = 25° C Tj = 150° C Typ Max. Unit 15 VR = VRRM µA 15 150 1.5 IF = 25 A 1.0 1.2 V 1.8 IF = 50 A 1. Pulse test: tp = 5 ms,  < 2% 2. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.012 IF2(RMS) 2/9 Min. DocID024734 Rev1 1.25 1.5 STTH50W03C Characteristics Table 5. Dynamic electrical characteristics per diode Symbol Parameter IRM Reverse recovery current QRR Test conditions Reverse recovery charge Sfactor IF = 25 A, VR = 200 V dIF/dt = -200 A/µs tfr Forward recovery time Forward recovery voltage Tj = 25 °C IF = 1 A, VR = 30 V dIF/dt = -100 A/µs Tj = 25 °C IF = 25 A, VFR = 1.2 V dIF/dt = 400 A/µs Figure 1. Average forward power dissipation versus average forward current (per diode) PF A(V)(W ) d = 0.2 35 Unit 7 9 A nC d = 0.5 20 2.5 27 ns 120 ns 3.6 V Figure 2. Forward voltage drop versus forward current (typical values, per diode) I F (A) 1000.0 40 Max. 0.3 Reverse recovery time 45 Typ 170 Softness factor trr VFP Tj = 125 °C Min. d=1 100.0 d = 0.1 d = 0.05 30 T j = 150 °C 25 T j = 25 °C 10.0 20 15 T 10 5 d=tp/T IF(AV)(A) 1.0 tp 0 V F (V) 0.1 0 5 10 15 20 25 30 35 0.0 Figure 3. Forward voltage drop versus forward current (maximum values, per diode) 1000.0 I F (A) 0.5 1.0 1.5 2.0 2.5 3.0 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Z th(j-c) /Rth(j-c) 0.9 0.8 100.0 T j = 150 °C 0.7 0.6 10.0 0.5 T j = 25 °C 0.4 0.3 1.0 0.2 0.1 V F (V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 Single pulse 3.0 0.0 1.E-04 DocID024734 Rev1 tp(s) 1.E-03 1.E-02 1.E-01 1.E+00 3/9 9 Characteristics STTH50W03C Figure 5. Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM (A) 16 tRR(ns) 100 I F = I F(AV) V R = 200 V Tj = 125 °C 14 Figure 6. Reverse recovery time versus dIF/dt (typical values, per diode) IF = I F(AV) VR= 200 V Tj = 125°C 90 80 12 70 10 60 8 50 6 40 30 4 20 2 10 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode) 0 250 150 200 250 300 350 400 450 500 S FACTOR 0.8 IF=IF(AV) VR=200 V Tj=125 °C 100 Figure 8. Reverse recovery softness factor versus dIF/dt (typical values, per diode) QRR(nC) 300 50 IF=IF(AV) VR=200 V Tj=125 °C 0.7 0.6 200 0.5 150 0.4 0.3 100 0.2 50 dIF/dt(A/µs) 0.1 0 0 50 100 150 200 250 300 350 400 450 500 Figure 9. Relative variations of dynamic parameters versus junction temperature 0 5 IF=IF(AV) VR=200 V Reference: Tj=125 °C 1.5 0.0 25 150 200 250 300 350 400 450 500 VFP (V) 4 3 IRM 2 Q RR 1 50 75 Tj (°C) 4/9 100 IF= IF(AV) Tj= 125°C 1.0 0.5 50 Figure 10. Transient peak forward voltage versus dIF/dt (typical values, per diode) 2.0 S FACTOR dIF/dt(A/µs) 0.0 100 125 dIF/dt(A/µs) 0 200 DocID024734 Rev1 250 300 350 400 450 500 STTH50W03C Characteristics Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus reverse (typical values, per diode) voltage applied (typical values, per diode) 140 C(pF) tFR(ns) 100 IF= I F(AV) VR= 1.2 V Tj= 125°C 120 F = 1 MHz V OSC= 30 mVRMS T j = 25°C 100 80 60 40 20 dIF/dt(A/µs) 0 200 VR(V) 10 250 300 350 400 450 500 1 DocID024734 Rev1 10 100 1000 5/9 9 Package information 2 STTH50W03C Package information  Epoxy meets UL94, V0  Cooling method: by conduction (C)  Recommended torque value: 0.5 N·m  Maximum torque value: 1.0 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. TO-247 dimension definitions V Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = 6/9 = DocID024734 Rev1 E STTH50W03C Package information Table 6. TO-247 dimension values Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 P (2) 5.45 18.50 typ. 0.215 0.220 0.728 typ. 3.55 3.65 0.139 0.143 R 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 1. Dimension D plus gate protrusion does not exceed 20.5 mm. 2. Resin thickness around the mounting hole is not less than 0.9 mm. DocID024734 Rev1 7/9 9 Ordering information 3 STTH50W03C Ordering information Table 7. Ordering information 4 Ordering type Marking Package Weight Base qty Delivery mode STTH50W03CW STTH50W03CW TO-247 4.46 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision 09-Aug-2013 1 Changes First issue. DocID024734 Rev1 STTH50W03C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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