STTH5R06DJF-TR

STTH5R06DJF Datasheet Ultrafast recovery diode high efficiency Features A(1) K A(2) K K A(2) A(2) A(1) A(1) PowerFLAT TM 5X6 • • • Suited for DC/DC converts Low losses High Tj • • • High surge current capability High energy avalanche capability 1 mm package thickness • ECOPACK®2 compliant component Description High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT™ 5x6, this device is intended to be used in low voltage high frequency inverters. PowerFLAT is a trademark of STMicroelectronics. Product status STTH5R06DJF Product summary IF(AV) 5A VRRM 600 V Tj(max.) 175 °C VF(typ.) 0.95 V trr(typ.) 30 ns DS8871 - Rev 2 - March 2018 For further information contact your local STMicroelectronics sales office. www.st.com STTH5R06DJF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 45 A 5 A 190 A -65 to +175 °C 175 °C IF(AV) Average forward current TC = 160 °C, δ = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Parameter Junction to case Max. value Unit 2.0 °C/W Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C VR = 600 V Tj = 125 °C Tj = 25 °C IF = 5 A Tj = 125 °C Min. Typ. Max. - Unit 60 - 60 600 - 1.55 2.00 - 0.95 1.20 µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.06 IF 2 (RMS) Table 4. Recovery characteristics Symbol trr IRM Sfactor Qrr DS8871 - Rev 2 Parameter Reverse recovery time Test conditions Tj = 25 °C IF = 1 A, VR = 30 V, dIF/dt = - 100 A/μs - 30 40 IF = 1 A, VR = 30 V, dIF/dt = - 50 A/μs - 40 55 - 6.0 8.0 - 0.5 - - 180 nC Reverse recovery current Reverse recovery softness factor Reverse recovery charges Min. Typ. Max. Unit Tj = 125 °C IF = 5 A, VR = 400 V, dIF/dt = - 200 A/μs ns A page 2/12 STTH5R06DJF Characteristics Table 5. Turn-on switching characteristics Symbol tfr VFP DS8871 - Rev 2 Parameter Forward recovery time Forward recovery voltage Test conditions Tj = 25 °C IF = 5 A, VFR = 1.6 V, dIF/dt = - 100 A/μs Min. Typ. - 2.3 Max. Unit 150 ns 3.5 V page 3/12 STTH5R06DJF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current Figure 2. Forward voltage drop versus forward current IF ( A ) 100.0 PF(AV) (W) 9 Tj = 125 °C (Typical values) Tj = 125 °C (Maximum values) 8 10.0 7 6 Tj = 25 °C (Maximum values) 5 1.0 4 3 T VF (V) 2 1 δ =tp/T I F(AV) (A) 0 0 2 1 3 3 0.1 0.0 tp 5 6 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) 1.0 0.5 Figure 4. Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 12 0.9 IF=I F(AV) VR=400 V Tj=125 °C 10 0.8 0.7 8 0.6 6 0.5 0.4 4 0.3 Single pulse 0.2 2 0.1 t p (s) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 dI F/dt(A/µs) 0 1.E+00 Figure 5. Reverse recovery time versus dIF/dt (typical values) 0 50 100 150 200 250 300 350 400 500 Figure 6. Reverse recovery charges versus dIF/dt (typical values) t rr (ns) QRR(nC) 140 280 IF=I F(AV) VR=400 V Tj=125 °C 120 IF=I F(AV) VR=400 V Tj=125 °C 240 100 200 80 160 60 120 40 80 20 40 dI F/dt(A/µs) dI F/dt(A/µs) 0 0 0 DS8871 - Rev 2 450 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 page 4/12 STTH5R06DJF Characteristics (curves) Figure 7. Softness factor versus dIF/dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature Sfactor 1.0 IF=I F(AV) VR=400 V Tj=125 °C 0.8 2.50 IF=I F(AV) VR=400 V Reference: T j=125 °C Sfactor 2.25 2.00 1.75 0.6 1.50 1.25 0.4 1.00 0.75 0.2 IRM 0.50 dI F/dt(A/µs) 0.25 0.0 0 50 100 150 200 250 300 350 400 450 500 QRR 25 Figure 9. Transient peak forward voltage versus dIF/dt (typical values) T j(°C) 0.00 50 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values) t FR(ns) VFP (V) 110 6 IF=I F(AV) Tj=125 °C 5 IF=I F(AV) VFR=1.6V Tj=125 °C 100 90 80 4 70 60 3 50 40 2 30 20 1 dIF/dt(A/µs) 10 0 dIF /dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) 50 150 200 250 300 350 250 450 500 Rth(j-a) (°C/W) PowerFLAT 5x6 epoxy printed circuit board Fr4 copper thic kness = 35 µm F=1 MHz VOSC=30 mVRMS Tj=25 °C 400 Figure 12. Thermal resistance junction to ambient versus copper surface under tab C(pF) 1000 100 200 150 100 100 50 Scu(cm 2) VR(V) 0 10 1 DS8871 - Rev 2 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 page 5/12 STTH5R06DJF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 PowerFLAT™ 5x6 package information • • DS8871 - Rev 2 Epoxy meets UL 94,V0 Cooling method: by conduction (C) page 6/12 STTH5R06DJF PowerFLAT™ 5x6 package information Figure 13. PowerFLAT™ 5x6 package outline DS8871 - Rev 2 page 7/12 STTH5R06DJF PowerFLAT™ 5x6 package information Table 6. PowerFLAT™ 5x6 mechanical data Dim. Ref Millimeters Min. Max. Min. Typ. Max. A 0.80 1.00 0.031 0.039 A1 0.02 0.05 0.001 0.002 A2 0.25 b 0.30 C 5.80 D 5.00 D2 4.15 D3 4.05 D4 0.010 0.50 0.012 6.00 6.20 0.228 0.236 0.244 5.20 5.40 0.196 0.205 0.212 4.45 0.163 4.20 4.35 0.159 0.165 0.171 4.80 5.00 5.20 0.188 0.196 0.204 D5 0.25 0.40 0.55 0.009 0.015 0.021 D6 0.15 0.30 0.45 0.005 0.011 0.017 e DS8871 - Rev 2 Typ. Inches 1.27 E 5.95 E2 6.15 0.020 0.175 0.050 6.35 0.234 3.50 3.70 0.138 0.146 E3 2.35 2.55 0.092 0.100 E4 0.40 0.60 0.015 0.023 E5 0.08 0.28 0.003 0.011 E6 0.20 0.325 0.45 0.007 0.012 0.017 E7 0.75 0.90 1.05 0.029 0.035 0.041 K 1.275 1.575 0.050 0.062 L 0.60 0.80 0.023 0.031 L1 0.05 0.25 0.001 θ 0° 12° 0° 0.15 0.242 0.005 0.250 0.009 12° page 8/12 STTH5R06DJF PowerFLAT™ 5x6 package information Figure 14. PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) Figure 15. Tape and reel specifications Dot identifying Pin A1 location 2.0 Ø 1.55 1.75 4.0 0.30 Ø 1.5 5.30 12.0 5.5 0.20 R 0.50 6.30 1.20 All dimensions are typical values in mm DS8871 - Rev 2 8.0 User direction of unreeling page 9/12 STTH5R06DJF Ordering information 3 Ordering information Table 7. Ordering information DS8871 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STTH5R06DJF-TR TH5R 06 PowerFLAT 5x6 0.095 g 3000 Tape and reel page 10/12 STTH5R06DJF Revision history Table 8. Document revision history DS8871 - Rev 2 Date Revision Changes 16-Mar-2012 1 Initial release. 12-Mar-2018 2 Updated package outline information. page 11/12 STTH5R06DJF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS8871 - Rev 2 page 12/12