STTH6004W

® STTH6004W Ultrafast high voltage rectifier Table 1: Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) Features and benefits ■ ■ ■ ■ 60 A 400 V 175 °C 0.83 V 50 ns K A DO-247 STTH6004W Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses Description The STTH6004W uses ST 400V technology and is specially suited for use in switching power supplies, welding equipment and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH6004W Marking STTH6004W Table 3: Absolute ratings (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 125 °C δ = 0.5 tp = 10 ms sinusoidal Parameter Repetitive peak reverse voltage Value 400 90 60 600 -65 to + 175 175 Unit V A A A °C °C October 2005 REV. 1 1/6 STTH6004W Table 4: Thermal Resistance Symbol Rth(j-c) Junction to case Parameter Value (max). 0.70 Unit °C/W Table 5: Static electrical characteristics Symbol IR * VF ** Parameter Test conditions VR = VRRM 100 IF = 60 A 0.83 Min. Typ Max. 50 1000 1.2 1.0 V Unit µA Reverse leakage current Tj = 25 °C Tj = 150 °C Forward voltage drop Tj = 25 °C Tj = 150 °C Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF (RMS) 2 Table 6: Dynamic characteristics Symbol trr IRM Sfactor tfr VFP Parameter Reverse recovery Tj = 25 °C time Test conditions IF = 1 A dIF/dt = 50 A/µs VR =30 V IF = 1 A dIF/dt = 200 A/µs VR =30 V Min Typ Max Unit 66 36 90 50 15 0.4 600 3.2 ns V A ns Reverse recovery Tj = 125 °C IF = 60 A VR = 200 V current dIF/dt = 100 A/µs Softness factor Tj = 125 °C IF = 60 A VR = 200 V dIF/dt = 100 A/µs IF = 60 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax IF = 60 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax Forward recovery Tj = 25 °C time Forward recovery Tj = 25 °C voltage Figure 1: Conduction losses versus average forward current P (W) 80 d=0.5 d=1 Figure 2: Forward voltage drop versus forward current I 200 180 FM (A) 70 d=0.2 160 140 120 100 80 60 60 d=0.1 TJ=150°C (Maximum values) 50 40 30 20 10 0 0 10 d=0.05 TJ=150°C (Typical values) T 40 20 0 I F(AV) (A) 20 30 40 50 60 70 80 V FM (V) 0.0 0.2 0.4 0.6 0.8 1.0 TJ=25°C (Maximum values) 1.2 1.4 1.6 2/6 STTH6004W Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 1.0 0.9 0.8 0.7 0.6 25 Figure 4: Peak reverse recovery current versus dIF/dt (typical values) I 45 40 35 30 Z th(j-c) /R th(j-c) Single pulse RM (A) IF=IF(AV) VR=200V Tj=125°C 0.5 0.4 0.3 0.2 0.1 0.0 1.E-04 20 15 10 t P (s) 1.E-03 1.E-02 1.E-01 1.E+00 5 0 0 50 100 150 dI F /dt(A/µs) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values) t rr (ns) 300 IF=IF(AV) VR=200V Tj=125°C Figure 6: Reverse recovery charges versus dIF/dt (typical values) Q rr (nC) 3000 IF=IF(AV) VR=200V Tj=125°C 250 2500 200 2000 150 1500 100 1000 50 500 0 0 50 100 150 dI F /dt(A/µs) 200 250 300 350 400 450 500 0 0 100 dI F /dt(A/µs) 200 300 400 500 Figure 7: Reverse recovery softness factor versus dIF/dt (typical values) S FACTOR 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 200 250 300 350 400 450 500 IF < 2 x IF(AV) VR=200V Tj=125°C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 1.4 1.2 1.0 0.8 0.6 0.4 QRR SFACTOR IRM & tRR 0.2 dI F /dt(A/µs) T (°C) j 25 50 75 IF=IF(AV) VR=200V Reference: Tj=125°C 0.0 100 125 3/6 STTH6004W Figure 9: Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 8 7 6 5 4 3 300 IF=IF(AV) Tj=125°C Figure 10: Forward recovery time versus dIF/dt (typical values) t 1000 900 800 700 600 500 400 fr (ns) IF=IF(AV) VFR=1.1 x V F max. Tj=125°C 2 1 0 0 50 100 150 200 dI /dt(A/µs) F 200 250 300 350 400 450 500 100 0 0 50 100 150 dI F /dt(A/µs) 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values) C (pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C V (V) R 100 1 10 100 1000 4/6 STTH6004W Figure 12: DO-247 Package mechanical data REF. V V Dia H A L5 L L2 L4 F2 L3 F3 V2 F G M E L1 D DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering information Ordering type STTH6004W ■ ■ Marking STTH6004W Package DO-247 Weight 4.40 g Base qty 30 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) ■ Recommended torque value: 0.8 Nm. ■ Maximum torque value: 1.0 Nm. Table 8: Revision history Date 18-Oct-2005 Revision 1 First issue Description of Changes 5/6 STTH6004W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6