STTH6010W

STTH6010 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 60 A VRRM 1000 V Tj 175° C VF (typ) 1.3 V trr (typ) 49 ns A A Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature K K DO-247 STTH6010W Order codes Description Part Number Marking STTH6010W STTH6010W The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8 Characteristics STTH6010 1 Characteristics Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Table 2. IR(1) 1000 V 80 A 60 A 450 A 400 A -65 to + 175 °C 175 °C tp = 5 µs, F = 5 kHz square Maximum operating junction temperature Thermal parameters Parameter Junction to case Rth(j-c) Symbol Unit Tc = 75° C Symbol Table 3. Value Value Unit 0.78 °C/W Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ Forward voltage drop Tj = 100° C µA 20 IF = 60 A 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: 2/8 200 2.0 Tj = 150° C P = 1.3 x IF(AV) + 0.0067 IF2(RMS) Unit 20 VR = VRRM Tj = 25° C VF(2) Max. 1.4 1.8 1.3 1.7 V STTH6010 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Unit 115 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 61 80 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 49 65 Reverse recovery current IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 31 40 A S Softness factor IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 1 tfr Forward recovery time dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C 750 ns Forward recovery voltage IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C Reverse recovery time trr IRM VFP Figure 1. Conduction losses versus average current Figure 2. ns 4 V Forward voltage drop versus forward current IFM(A) P(W) 200 140 =1 =0.5 180 Tj=150°C (Maximum values) 120 =0.2 100 160 140 =0.1 =0.05 Tj=150°C (Typical values) 120 80 100 60 60 40 T 40 20 20 IF(AV)(A) VFM(V) 0 0 0 10 Figure 3. 20 30 40 50 60 70 0.0 80 Relative variation of thermal impedance junction to case versus pulse duration 0.5 Figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 70 1.0 0.9 Tj=25°C (Maximum values) 80 VR=600V Tj=125°C Single pulse 60 IF= 2 x IF(AV) 0.8 IF= IF(AV) 50 0.7 0.6 40 IF=0.5 x IF(AV) 0.5 30 0.4 20 0.3 0.2 10 0.1 dIF/dt(A/µs) tp(s) 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH6010 Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) trr(ns) 10 700 VR=600V Tj=125°C 600 VR=600V Tj=125°C 9 IF= 2 x IF(AV) 8 IF= 2 x IF(AV) 500 7 IF= IF(AV) 6 400 IF= IF(AV ) 5 300 4 IF=0.5 x IF(AV) 3 200 2 100 IF=0.5 x IF(AV) dIF/dt(A/µs) 1 dIF/dt(A/µs) 0 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 0 500 Softness factor versus dIF/dt (typical values) 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature S factor 1.50 2.0 IF = 2 x IF(AV) VR=600V Tj=125°C 1.8 IF = IF(AV) VR=600V Reference: Tj=125°C Sfactor 1.6 1.25 1.4 1.2 1.0 1.00 0.8 IRM 0.6 0.75 0.4 tRR QRR 0.2 dIF/dt(A/µs) 25 0 4/8 50 100 150 200 250 300 350 Tj(°C) 0.0 0.50 400 450 500 50 75 100 125 STTH6010 Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) tfr(ns) 1200 20 IF = IF(AV) Tj=125°C 18 IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 1000 16 14 800 12 10 600 8 6 400 4 2 dIF/dt(A/µs) dIF/dt(A/µs) 200 0 0 100 200 300 400 500 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8 Package information 2 STTH6010 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.80 Nm Maximum torque value: 1.0 Nm Table 5. DO-247 dimensions DIMENSIONS REF. V Dia V Millimeters Inches Min. Max Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 2.00 0.078 A H F3 2.00 G L5 L L2 2.40 0.078 10.90 0.094 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.169 L4 F2 L3 L1 F3 L2 D V2 L3 F G M E 0.145 18.50 14.20 0.728 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH6010 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6010W STTH6010W DO-247 4.4 g 30 Tube Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. 7/8 STTH6010 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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