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STTH602CFP

STTH602CFP

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO220FP

  • 描述:

    DIODE ARRAY GP 200V 3A TO220FP

  • 数据手册
  • 价格&库存
STTH602CFP 数据手册
STTH602C Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 2x3A 200 V 175° C 0.80 V 14 ns A1 A2 K Features and benefits ■ ■ ■ ■ ■ ■ Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability High junction temperature insulated package: TO-220FPAB A1 K A2 A2 A1 K Description Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection. TO-220AB STTH602CT TO-220FPAB STTH602CFP Order codes Part Number STTH602CT STTH602CFP Marking STTH602C STTH602C April 2006 Rev 1 www.st.com 1/9 Characteristics STTH602C 1 Table 1. Symbol VRRM IF(RMS) Characteristics Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current TO-220AB IF(AV) Average forward current, δ = 0.5 TO-220FPAB IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Per diode Tc = 160° C Per device Tc = 155° C Per diode Tc = 150° C Per device Tc = 140° C tp = 10 ms Sinusoidal Value 200 22 3 A 6 3 A 6 60 -65 to + 175 175 A °C °C Unit V A Table 2. Symbol Thermal parameters Parameter Per diode TO-220AB Per device 3.0 7.5 5.25 1 3 ° C/W Value 5 Unit Rth(j-c) Junction to case Per diode TO-220FPAB Per device TO-220AB Per diode Per diode Rth(c) Coupling TO-220FPAB When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Typ Max. 3 µA 3 0.98 IF = 3 A 0.8 1.1 IF = 6 A 0.9 30 1.1 0.95 V 1.25 1.05 Unit VF(2) Forward voltage drop Tj = 150° C Tj = 25° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.033 IF2(RMS) 2/9 STTH602C Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C Min. Typ 14 21 4 24 3.7 Max. 20 30 5.5 A ns V Unit ns trr Reverse recovery time IRM tfr VFP Reverse recovery current Forward recovery time Forward recovery voltage IF = 3 A, dIF/dt = 200 A/µs, VR = 160 V, Tj = 125 °C IF = 3 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax, Tj = 25 °C IF = 3 A, dIF/dt = 200 A/µs, Tj = 25 °C Figure 1. Peak current versus duty cycle (per diode) Figure 2. Forward voltage drop versus forward current (typical values per diode) IM(A) 100 T IM IFM(A) 100 80 δ d=tp/T tp 80 60 P = 10 W 60 40 P=5W P=3W 40 Tj=150°C 20 20 Tj=25°C δ 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. Forward voltage drop versus forward current (maximum values per diode) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (T0-220AB) IFM(A) Zth(j-c)/Rth(j-c) 1.0 Single pulse TO-220AB 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tj=25°C Tj=150°C VFM(V) 0.1 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 3/9 Characteristics STTH602C Figure 5. Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (TO-220FPAB) C(pF) 100 Junction capacitance versus reverse applied voltage (typical values per diode) F=1MHz Vosc=30mVRMS Tj=25°C Zth(j-c)/Rth(j-c) 1.0 Single pulse TO-220FPAB 0.1 10 tp(s) 0.0 1.E-03 1 VR(V) 1.E-02 1.E-01 1.E+00 1.E+01 1 10 100 1000 Figure 7. QRR(nC) 100 Reverse recovery charges versus dIF/dt (typical values) IF=3A VR=160V Figure 8. tRR(ns) 80 70 60 Reverse recovery time versus dIF/dt (typical values) IF=3A VR=160V 80 Tj=125°C 60 50 40 40 Tj=25°C Tj=125°C 30 20 Tj=25°C 20 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 10 0 dIF/dt(A/µs) 0 10 100 1000 Figure 9. Peak reverse recovery current versus dIF/dt (typical values) Figure 10. Dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125°C] 1.4 IF=3A VR=160V IRM(A) 10 IF=3A VR=160V 1.2 1.0 8 6 Tj=125°C 0.8 0.6 IRM 4 Tj=25°C QRR 0.4 0.2 2 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Tj(°C) 0.0 25 50 75 100 125 150 4/9 STTH602C Ordering information scheme 2 Ordering information scheme STTH Ultrafast switching diode Average forward current 6=6A Repetitive peak reverse voltage 02 = 200 V Package CT = TO-220AB CFP = TO-220FPAB 6 02 Cxx 5/9 Package information STTH602C 3 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm Maximum torque value: 1.0 Nm Table 5. TO-220AB Dimensions DIMENSIONS REF. Millimeters Min. A a1 B ØI L F A I4 l3 a1 l2 c2 b2 C Inches Min. Typ Max. 0.625 0.147 Typ Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.90 0.598 a2 B b1 b2 C c1 c2 e 14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 a2 M b1 e c1 F ØI I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066 6/9 STTH602C Table 6. TO-220FPAB Dimensions Package information DIMENSIONS REF. Millimeters Min. A B A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 E 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G L3 L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STTH602C 4 Ordering information Part Number STTH602CT STTH602CFP Marking STTH602C STTH602C Package TO-220AB TO-220FPAB Weight 2.23 g 2g Base qty 50 50 Delivery mode Tube Tube 5 Revision history Date 05-Apr-2006 Revision 1 First issue Description of Changes 8/9 STTH602C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9
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