STTH60L04W
Ultrafast high voltage rectifier
Datasheet - production data
Features
Ultrafast switching
Low reverse current
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Low thermal resistance
Reduces switching and conduction losses
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Description
DO-247
STTH60L04W
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The STTH60L04W uses ST 400 V technology
and is specially suited for use in switching power
supplies, welding equipment, and industrial
applications, as an output rectification diode.
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Table 1. Device summary
Symbol
Value
IF(AV)
60 A
VRRM
400 V
Tj (max)
175 °C
)
(s
s
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VF (typ)
0.83 V
trr (max)
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50 ns
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March 2013
This is information on a product in full production.
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www.st.com
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Characteristics
1
STTH60L04W
Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(RMS)
Forward rms current
90
A
60
A
600
A
IF(AV)
Average forward current
Tc = 90 °C, = 0.5
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
Tstg
Storage temperature range
-55 to + 175
°C
Maximum operating junction temperature
c
u
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°C
Tj
Per diode
175
Table 3. Thermal resistance
Symbol
Rth(j-c)
Parameter
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Junction to case
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t
Value (max)
Unit
0.70
°C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Reverse leakage
current
VF(2)
Forward voltage drop
Test conditions
O
)
Tj = 25 °C
s
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du
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Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Min.
To evaluate the conduction losses use the following equation:
2/9
Unit
µA
100
1000
1.2
IF = 60 A
2. Pulse test: tp = 380 µs, < 2%
s
b
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Max.
50
VR = VRRM
1. Pulse test: tp = 5 ms, < 2%
e
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Typ.
P = 0.8 x IF(AV) + 0.0033 IF2(RMS)
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V
0.83
1.0
STTH60L04W
Characteristics
Table 5. Dynamic characteristics (per diode)
Symbol
Parameter
Test conditions
Reverse recovery
time
trr
Tj = 25 °C
Min.
Typ.
Max.
IF = 1 A, dIF/dt = 50 A/µs
VR = 30 V
66
90
IF = 1 A, dIF/dt = 200 A/µs
VR = 30 V
36
ns
Reverse recovery
current
Tj = 125 °C
IF = 60 A, VR = 200 V
dIF/dt = 100 A/µs
Softness factor
Tj = 125 °C
IF = 60 A, VR = 200 V
dIF/dt = 100 A/µs
tfr
Forward recovery
time
Tj = 25 °C
IF = 60 A, dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25 °C
IF = 60 A, dIF/dt = 200 A/µs,
VFR = 1.1 x VFmax
IRM
Sfactor
Figure 1. Conduction losses versus average
forward current (per diode)
P (W)
d=1
d=0.2
)
(s
d=0.1
50
d=0.05
40
ct
30
du
20
10
o
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P
T
0
10
20
e
t
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ol
30
40
50
u
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3.2
V
r
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TJ=150°C
(Maximum values)
140
120
TJ=150°C
(Typical values)
100
80
60
V FM (V)
TJ=25°C
(Maximum values)
0
60
70
0.0
80
I
45
Single pulse
35
0.7
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RM
(A)
IF=IF(AV)
VR=200V
Tj=125°C
40
0.8
0.2
Figure 4. Peak reverse recovery current versus
dIF/dt (typical values, per diode)
Z th(j-c) /R th(j-c)
0.9
ns
(A)
20
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
s
b
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)
s
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ct
600
40
I F(AV) (A)
0
A
0.4
160
60
1.0
FM
180
70
15
t
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s
b
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200
d=0.5
50
Figure 2. Forward voltage drop versus forward
current (per diode)
I
80
Unit
30
0.6
25
0.5
20
0.4
15
0.3
10
0.2
0.1
1.E-04
5
t P (s)
0.0
1.E-03
1.E-02
dI F /dt(A/µs)
0
1.E-01
1.E+00
0
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500
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Characteristics
STTH60L04W
Figure 5. Reverse recovery time versus dIF/dt
(typical values, per diode)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
t rr (ns)
Q rr (nC)
3000
300
IF=IF(AV)
VR=200V
Tj=125°C
250
IF=IF(AV)
VR=200V
Tj=125°C
2500
200
2000
150
1500
100
1000
500
50
dI F /dt(A/µs)
0
0
50
100
150
200
250
300
dI F /dt(A/µs)
0
350
400
450
0
500
Figure 7. Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
S FACTOR
100
200
500
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1.6
0.7
400
Figure 8. Relative variations of dynamic
parameters versus junction temperature
0.8
IF < 2 x IF(AV)
VR=200V
Tj=125°C
)
s
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ct
300
SFACTOR
1.4
t
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1.2
0.6
1.0
0.5
bs
0.8
0.4
IRM & tRR
0.6
0.3
-O
0.4
0.2
0.1
)
s
(
t
dI F /dt(A/µs)
0.0
0
50
100
150
200
c
u
d
250
300
350
400
450
QRR
0.2
IF=IF(AV)
VR=200V
Reference: Tj=125°C
T (°C)
j
0.0
25
50
75
100
125
500
Figure 9. Transient peak forward voltage versus Figure 10. Forward recovery time versus dIF/dt
dIF/dt (typical values, per diode)
(typical values, per diode)
VFP(V)
e
t
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8
o
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P
t
1000
IF=IF(AV)
Tj=125°C
7
b
O
IF=IF(AV)
VFR=1.1 x V F max.
Tj=125°C
800
700
5
600
4
500
400
3
300
2
200
1
100
dI /dt(A/µs)
F
0
0
4/9
(ns)
900
so
6
fr
50
100
150
200
250
300
dI F /dt(A/µs)
0
350
400
450
500
0
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100
150
200
250
300
350
400
450
500
STTH60L04W
Characteristics
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
C (pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
V (V)
R
100
1
10
100
1000
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Package information
2
STTH60L04W
Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 to 1.0 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Figure 12. DO-247 dimension definitions
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L5
L
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L3
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F2
L2
L4
L1
F3
D
V2
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STTH60L04W
Package information
Table 6. DO-247 dimension values
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.85
5.15
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
F2
2.00
F3
2.40
0.078
0.429
H
15.45
15.75
0.608
L
19.85
20.15
0.781
L1
3.70
4.30
0.145
e
t
e
ol
18.50
L3
14.20
14.80
L4
34.60
L5
5.50
M
)
(s
2.00
t
c
u
V
V2
Dia.
0.094
10.90
L2
s
b
O
3.00
u
d
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Pr
0.559
0.582
1.362
0.216
0.078
0.118
60°
60°
3.65
0.793
0.728
5°
3.55
0.620
0.169
5°
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0.078
2.00
G
Note:
Inches
0.139
0.143
Leads and slug are pure tin plating finishing
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Ordering information
3
STTH60L04W
Ordering information
Table 7. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STTH60L04W
STTH60L04W
DO-247
4.4 g
30
Tube
Revision history
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Table 8. Document revision history
Changes
Revision
26-Oct-2006
1
First issue
18-Mar-2013
2
Updated Package information on page 6.
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