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STTH60L04W

STTH60L04W

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-247-2

  • 描述:

    DIODE GEN PURP 400V 60A DO247

  • 数据手册
  • 价格&库存
STTH60L04W 数据手册
STTH60L04W Ultrafast high voltage rectifier Datasheet - production data Features  Ultrafast switching  Low reverse current ) s ( ct  Low thermal resistance  Reduces switching and conduction losses A K u d o Description DO-247 STTH60L04W r P e The STTH60L04W uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. t e l o Table 1. Device summary Symbol Value IF(AV) 60 A VRRM 400 V Tj (max) 175 °C ) (s s b O t c u VF (typ) 0.83 V trr (max) d o r 50 ns P e t e l o s b O March 2013 This is information on a product in full production. DocID12825 Rev 2 1/9 www.st.com 9 Characteristics 1 STTH60L04W Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 90 A 60 A 600 A IF(AV) Average forward current Tc = 90 °C,  = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range -55 to + 175 °C Maximum operating junction temperature c u d °C Tj Per diode 175 Table 3. Thermal resistance Symbol Rth(j-c) Parameter e t e l Junction to case o s b o r P ) s ( t Value (max) Unit 0.70 °C/W Table 4. Static electrical characteristics (per diode) Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions O ) Tj = 25 °C s ( t c du o r P Tj = 150 °C Tj = 25 °C Tj = 150 °C Min. To evaluate the conduction losses use the following equation: 2/9 Unit µA 100 1000 1.2 IF = 60 A 2. Pulse test: tp = 380 µs,  < 2% s b O Max. 50 VR = VRRM 1. Pulse test: tp = 5 ms,  < 2% e t e ol Typ. P = 0.8 x IF(AV) + 0.0033 IF2(RMS) DocID12825 Rev 2 V 0.83 1.0 STTH60L04W Characteristics Table 5. Dynamic characteristics (per diode) Symbol Parameter Test conditions Reverse recovery time trr Tj = 25 °C Min. Typ. Max. IF = 1 A, dIF/dt = 50 A/µs VR = 30 V 66 90 IF = 1 A, dIF/dt = 200 A/µs VR = 30 V 36 ns Reverse recovery current Tj = 125 °C IF = 60 A, VR = 200 V dIF/dt = 100 A/µs Softness factor Tj = 125 °C IF = 60 A, VR = 200 V dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25 °C IF = 60 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25 °C IF = 60 A, dIF/dt = 200 A/µs, VFR = 1.1 x VFmax IRM Sfactor Figure 1. Conduction losses versus average forward current (per diode) P (W) d=1 d=0.2 ) (s d=0.1 50 d=0.05 40 ct 30 du 20 10 o r P T 0 10 20 e t e ol 30 40 50 u d o 3.2 V r P e TJ=150°C (Maximum values) 140 120 TJ=150°C (Typical values) 100 80 60 V FM (V) TJ=25°C (Maximum values) 0 60 70 0.0 80 I 45 Single pulse 35 0.7 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RM (A) IF=IF(AV) VR=200V Tj=125°C 40 0.8 0.2 Figure 4. Peak reverse recovery current versus dIF/dt (typical values, per diode) Z th(j-c) /R th(j-c) 0.9 ns (A) 20 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration s b O ) s ( ct 600 40 I F(AV) (A) 0 A 0.4 160 60 1.0 FM 180 70 15 t e l o s b O 200 d=0.5 50 Figure 2. Forward voltage drop versus forward current (per diode) I 80 Unit 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 0.1 1.E-04 5 t P (s) 0.0 1.E-03 1.E-02 dI F /dt(A/µs) 0 1.E-01 1.E+00 0 DocID12825 Rev 2 50 100 150 200 250 300 350 400 450 500 3/9 Characteristics STTH60L04W Figure 5. Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) t rr (ns) Q rr (nC) 3000 300 IF=IF(AV) VR=200V Tj=125°C 250 IF=IF(AV) VR=200V Tj=125°C 2500 200 2000 150 1500 100 1000 500 50 dI F /dt(A/µs) 0 0 50 100 150 200 250 300 dI F /dt(A/µs) 0 350 400 450 0 500 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values, per diode) S FACTOR 100 200 500 u d o r P e 1.6 0.7 400 Figure 8. Relative variations of dynamic parameters versus junction temperature 0.8 IF < 2 x IF(AV) VR=200V Tj=125°C ) s ( ct 300 SFACTOR 1.4 t e l o 1.2 0.6 1.0 0.5 bs 0.8 0.4 IRM & tRR 0.6 0.3 -O 0.4 0.2 0.1 ) s ( t dI F /dt(A/µs) 0.0 0 50 100 150 200 c u d 250 300 350 400 450 QRR 0.2 IF=IF(AV) VR=200V Reference: Tj=125°C T (°C) j 0.0 25 50 75 100 125 500 Figure 9. Transient peak forward voltage versus Figure 10. Forward recovery time versus dIF/dt dIF/dt (typical values, per diode) (typical values, per diode) VFP(V) e t e l 8 o r P t 1000 IF=IF(AV) Tj=125°C 7 b O IF=IF(AV) VFR=1.1 x V F max. Tj=125°C 800 700 5 600 4 500 400 3 300 2 200 1 100 dI /dt(A/µs) F 0 0 4/9 (ns) 900 so 6 fr 50 100 150 200 250 300 dI F /dt(A/µs) 0 350 400 450 500 0 DocID12825 Rev 2 50 100 150 200 250 300 350 400 450 500 STTH60L04W Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C (pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C V (V) R 100 1 10 100 1000 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID12825 Rev 2 5/9 Package information 2 STTH60L04W Package information  Epoxy meets UL94, V0  Cooling method: by conduction (C)  Recommended torque value: 0.8 to 1.0 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct Figure 12. DO-247 dimension definitions V r P e A H t e l o L5 L )- s ( t c L3 du e t e ol o r P s b O F2 L2 L4 L1 F3 D V2 F G s b O 6/9 u d o Dia V DocID12825 Rev 2 M E STTH60L04W Package information Table 6. DO-247 dimension values Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 2.00 F3 2.40 0.078 0.429 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 e t e ol 18.50 L3 14.20 14.80 L4 34.60 L5 5.50 M ) (s 2.00 t c u V V2 Dia. 0.094 10.90 L2 s b O 3.00 u d o Pr 0.559 0.582 1.362 0.216 0.078 0.118 60° 60° 3.65 0.793 0.728 5° 3.55 0.620 0.169 5° od r P e ) s ( ct 0.078 2.00 G Note: Inches 0.139 0.143 Leads and slug are pure tin plating finishing t e l o s b O DocID12825 Rev 2 7/9 Ordering information 3 STTH60L04W Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STTH60L04W STTH60L04W DO-247 4.4 g 30 Tube Revision history ) s ( ct Table 8. Document revision history Changes Revision 26-Oct-2006 1 First issue 18-Mar-2013 2 Updated Package information on page 6. r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/9 u d o Date DocID12825 Rev 2 STTH60L04W ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. r P e t e l o Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. s b O No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u d o r ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. P e t e l o s b O Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID12825 Rev 2 9/9
STTH60L04W 价格&库存

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