STTH60SW03CW

STTH60W03C High efficiency rectifier Datasheet - production data Description A1 K The STTH60W03C uses ST 300 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. A2 Table 1: Device summary A2 K Symbol Value IF(AV) 2 x 30 A VRRM 300 V Tj 175 °C Features VF (typ.) 0.94 V      trr (typ.) 25 ns A1 TO-247 Ultrafast switching Low reverse current Low thermal resistance Reduced switching losses ECOPACK®2 compliant component February 2018 DocID023144 Rev 2 This is information on a product in full production. 1/9 www.st.com Characteristics 1 STTH60W03C Characteristics Table 2: Absolute ratings (limiting values, per diode, limiting values at 25°C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 50 A Average forward current δ = 0.5, square wave Tc = 110 °C Per diode 30 A IF(AV) Tc = 95 °C Per device 60 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 280 A Tstg Storage temperature range -65 to +175 °C +175 °C Tj Maximum operating junction temperature range Table 3: Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Junction to case Max. value Unit Per diode 1.5 °C/W Total 0.9 °C/W 0.3 °C/W Coupling When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 30 A IF = 60 A Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 μs, δ < 2 % To evaluate the conduction losses, use the following equation: P = 0.85 x IF(AV) + 0.010 x IF2(RMS) 2/9 DocID023144 Rev 2 Min. Typ. - 20 20 - 200 Unit µA 1.45 0.94 - Max. 1.15 1.7 1.18 1.45 V STTH60W03C Characteristics Table 5: Dynamic electrical characteristics (per diode) Symbol Parameters IRM Reverse recovery current Tj = 125 °C IF = 30 A, VR = 200 V, dIF/dt = -200 A/μs - 7 QRR Reverse recovery charge Tj = 125 °C IF = 30 A, VR = 200 V, dIF/dt = -200 A/μs - 180 Sfactor Softness factor Tj = 125 °C IF = 30 A, VR = 200 V, dIF/dt = -200 A/μs - 0.3 trr Reverse recovery time Tj = 25 °C IF = 1 A, dIF/dt = -100 A/μs, VR = 30 V - 25 tfr Forward recovery time Tj = 25 °C IF = 30 A, dIF/dt = 200 A/μs, VFR = 1.5 V VFP Test conditions Forward recovery voltage DocID023144 Rev 2 Min. Typ. - 2.0 Max. 9 Unit A nC 35 ns 180 ns 3.0 V 3/9 Characteristics 1.1 STTH60W03C Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) PF(AV)(W) 1000.0 50 δ = 0.2 45 δ=1 δ = 0.5 Tj = 150 °C (Maximum values) δ = 0. 1 40 100.0 δ = 0. 05 35 Tj = 150 °C (Typical values) Tj = 25 °C (Maximum values) 30 10.0 25 20 15 1.0 T 10 5 δ = tp/T VFM (V) IF(AV)(A) tp 0.1 0.0 0 0 5 10 15 20 25 30 35 40 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 0.5 1.0 1.5 2.0 2.5 3.0 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) Zth(j-c) /Rth(j-c) IRM (A) 1.0 16 0.9 IF = IF(AV) VR = 200 V Tj = 125 °C 14 0.8 12 0.7 0.6 10 0.5 8 0.4 6 0.3 4 Single pulse 0.2 2 0.1 dI F /dt(A/µs) t p(s) 0 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) Q RR(nC) t rr (ns) 350 100 IF = I F(AV) V R = 200 V T j = 125 °C 90 80 IF = IF(AV) VR = 200 V Tj = 125 °C 300 250 70 60 200 50 150 40 30 100 20 50 10 dI F /dt(A/µs) dI F /dt(A/µs) 0 0 0 4/9 50 100 150 200 250 300 350 400 450 500 DocID023144 Rev 2 0 50 100 150 200 250 300 350 400 450 500 STTH60W03C Characteristics Figure 7: Relative variation of dynamic parameters versus junction temperature Figure 8: Reverse recovery softness factor versus dIF/dt (typical values, per diode) 0.8 2. 5 IF = I F(AV) VR = 200 V Reference: Tj =125 °C SFACTOR 2. 0 0.7 0.6 0.5 1. 5 0.4 0.3 1. 0 0.2 IRM 0. 5 0.1 Tj (°C) QRR 0. 0 25 50 75 100 0.0 0 125 50 100 150 200 250 300 350 400 450 500 Figure 10: Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP (V) t fr (ns) 5 180 IF =I F(AV) Tj=125 °C IF = IF(AV) VFR = 1.5 V Tj = 125 °C 160 140 4 120 3 100 80 2 60 40 1 20 0 150 dI F/dt(A/µs) dI F/dt(A/µs) 200 250 300 350 400 450 500 0 100 150 200 250 300 350 400 450 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 100 VR(V) 10 1 10 DocID023144 Rev 2 100 1000 5/9 500 Package information 2 STTH60W03C Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m (TO-247) Maximum torque value: 1.0 N·m (TO-247) TO-247 with Inches package information Figure 12: TO-247 package outline 0075325_8 6/9 DocID023144 Rev 2 Package information STTH60W03C Table 6: TO-247 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 5.45 18.50 0.215 0.220 0.728 ØP(2) 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 Notes: (1)Dimension (2)Resin D plus gate protusion does not exceed 20.5 mm thickness around the mounting hole is not less than 0.9 mm. DocID023144 Rev 2 7/9 Ordering information 3 STTH60W03C Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH60W03CW STTH60W03CW TO-247 4.43 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 07-Sep-2004 1 First issue. 08-Feb-2018 2 Updated Description and package information. DocID023144 Rev 2 STTH60W03C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DocID023144 Rev 2 9/9