STTH61R04TV

STTH61R04TV Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 30 A 400 V 150° C 0.95 V 24 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 A1 K1 K2 K1 Features and benefits ■ ■ ■ ■ ■ Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF A2 K2 ISOTOP STTH61R04TV1 A2 ISOTOP STTH61R04TV2 Order codes Part Number Marking STTH61R04TV1 STTH61R04TV2 STTH61R04TV1 STTH61R04TV2 Description The STTH61R04TV series uses ST's new 400 V planar Pt doping technology. The STTH61R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7 Characteristics STTH61R04TV 1 Table 1. Symbol VRRM VRSM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode tp = 5 µs, F = 1 kHz square Tc = 80° C Value 400 400 60 30 900 350 -65 to + 150 150 Unit V V A A A A °C °C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance 0.8 0.1 ° C/W Value 1.5 Unit When the diodes are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 15 µA 15 150 1.45 IF = 30 A 1.05 0.95 1.3 1.20 V Unit VF(2) Forward voltage drop Tj = 100° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.01 x IF2(RMS) 2/7 STTH61R04TV Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 65 31 24 10 0.4 250 2.9 ns V 45 35 14 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 30 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 30 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C dIF/dt = 100 A/µs IF = 30 A VFR = 1.5 x VFmax, Tj = 25° C IF = 30 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. P(W) 50 45 40 35 30 25 20 15 Conduction losses versus average current δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 Figure 2. 200 180 160 140 120 100 80 60 T Forward voltage drop versus forward current IFM(A) TJ=150°C (Maximum values) TJ=150°C (Typical values) 10 5 0 0 5 10 15 20 25 30 35 40 IF(AV)(A) 40 δ=tp/T tp 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ=25°C (Maximum values) VFM(V) 1.8 2.0 2.2 2.4 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 Single pulse ISOTOP 22 20 18 16 14 12 10 8 6 4 2 IRM(A) IF= 30A VR=200V Tj=125 °C Tj=25 °C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 dIF/dt(A/µs) 10 100 1000 0 3/7 Characteristics STTH61R04TV Figure 5. 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Reverse recovery time versus dIF/dt (typical values) IF= 60A VR=200V Figure 6. 600 550 500 450 400 Reverse recovery charges versus dIF/dt (typical values) tRR(ns) QRR(nC) IF= 30 A VR=320V Tj=125 °C Tj=125 °C 350 300 250 Tj=25 °C 200 150 100 Tj=25 °C dIF/dt(A/µs) 10 100 1000 50 0 10 100 dIF/dt(A/µs) 1000 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dIF/dt (typical values) 1.4 1.2 1.0 0.8 0.6 QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] IF= 100A VR=320V VFp(V) 12 11 10 9 8 IF=30A Tj=125°C IRM 7 6 5 QRR 4 3 2 0.4 0.2 T j(°C) 0.0 25 50 75 100 125 150 1 0 0 50 100 150 200 dIF/dt(A/µs) 250 300 350 400 450 500 Figure 9. Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) 1000 IF=30A VFR=1.1 x V F max. Tj=125°C 4000 3500 3000 2500 2000 1500 1000 500 0 tFR(ns) C(pF) F=1MHz VOSC=30mVRMS Tj=25°C 100 dIF/dt(A/µs) VR(V) 10 500 0 100 200 300 400 1 10 100 1000 4/7 STTH61R04TV Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions Dimensions Ref. Millimeters Min. E G2 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 A C 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A A1 C2 E2 B C C2 F1 F D D1 E P1 E1 G D1 D S E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 ØP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH61R04TV 3 Ordering information Part Number STTH61R04TV1 STTH61R04TV2 Marking STTH61R04TV1 STTH61R04TV2 Package ISOTOP ISOTOP Weight 27 g 27 g Base qty 10 10 Delivery mode Tube Tube 4 Revision history Date 31-Mar-2007 Revision 1 First issue Description of Changes 6/7 STTH61R04TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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