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STTH61W04SW

STTH61W04SW

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    DIODE GEN PURP 400V 60A TO247

  • 数据手册
  • 价格&库存
STTH61W04SW 数据手册
STTH61W04S Turbo 2 ultrafast high voltage rectifier Datasheet  production data Features ■ Ultrafast switching A ■ Low reverse recovery current A ■ Low thermal resistance ■ Reduces switching losses ■ ECOPACK®2 compliant component ■ Ribbon bonding for more robustness K A A K Description The STTH61W04SW, uses ST Turbo 2, 400 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST's TO-247, this device offers high power integration for all welding machines. October 2012 This is information on a product in full production. TO-247 STTH61W04SW Table 1. Doc ID 023613 Rev 1 Device summary Symbol Value IF(AV) 60 A VRRM 400 V trr (typ) 40 ns Tj(max) 175 °C VF (typ) 0.93 V 1/7 www.st.com 7 Characteristics 1 STTH61W04S Characteristics Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 90 A IF(AV) Average forward current,  = 0.5 Tc = 110°C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Table 3. Table 4. 60 A 500 A -65 to + 175 °C + 175 °C Maximum operating junction temperature Thermal resistance Symbol Rth(j-c) Per diode Parameter Junction to case Total Value Unit 0.7 °C / W Static electrical characteristics Symbol Parameter Test conditions IR (1) Reverse leakage current VF (2) Forward voltage drop Tj = 25 °C Min. Typ. Max. Unit 20 Tj = 125 °C Tj = 25 °C µA VR = VRRM 20 200 1.35 Tj = 150 °C IF = 60 A 0.93 1.15 1. Pulse test: tp = 5 ms,  < 2% 2. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.005 IF2(RMS) Table 5. Dynamic electrical characteristics Symb ol Parameter IRM Reverse recovery current QRR Test conditions Reverse recovery charge 2/7 Typ. 19 Tj = 125 °C IF = 60 A, VR = 320 V dIF/dt = -200 A/µs Sfactor Softness factor Max. Unit 26 1400 A nC 0.3 trr Reverse recovery time Tj = 25 °C tfr Forward recovery time Tj = 25 °C Forward recovery voltage Tj = 25 °C VFP Min. IF = 1 A, VR = 30 V dIF/dt = -100 A/µs IF = 60 A, VFR = 1.2 V dIF/dt = 400 A/µs Doc ID 023613 Rev 1 40 2 55 ns 250 ns 3 V STTH61W04S Figure 1. Characteristics Average forward power dissipation Figure 2. versus average forward current PF(AV)(W) Forward voltage drop versus forward current IFM(A) 110 1000.0 100 δ=1 δ = 0.5 Tj=150°C (Maximum values) 90 δ = 0.2 80 Tj=150 °C (Typical values) δ = 0.1 70 δ = 0.05 60 100.0 Tj=25 °C (Maximum values) 10.0 50 40 30 1.0 T 20 10 δ = tp/T VFM (V) IF(AV)(A) tp 0.1 0 0 10 Figure 3. 20 30 40 50 60 70 0.0 80 0.4 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.8 1.2 1.6 2.0 2.4 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 1.0 40 0.9 IF=I F(AV) VR=320 V Tj=125 °C 35 0.8 30 0.7 0.6 25 0.5 20 0.4 15 0.3 10 0.2 Single pulse 5 tp(s) 0.1 dIF/dt(A/µs) 0 0.0 1.E-04 1.E-03 Figure 5. 1.E-02 1.E-01 1.E+00 0 50 100 Reverse recovery time versus dIF/dt Figure 6. (typical values) trr(ns) 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) QRR(nC) 200 2500 IF=I F(AV) VR=320 V Tj=125 °C 160 IF=I F(AV) VR=320 V Tj=125 °C 2000 120 1500 80 1000 500 40 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 Doc ID 023613 Rev 1 50 100 150 200 250 300 350 400 450 500 3/7 Characteristics Figure 7. STTH61W04S Reverse recovery softness factor versus dIF/dt (typical values) S factor Figure 8. Relative variation of dynamic parameters versus junction temperature 2.5 0.5 IF=I F(AV) VR=320 V Reference: T j=125 °C IF=I F(AV) VR=320 V Tj=125 °C 2.0 SFACTOR 0.4 1.5 0.3 1.0 0.2 IRM 0.5 0.1 dIF/dt(A/µs) QRR Tj(°C) 0.0 0.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 500 Transient peak forward voltage versus dIF/dt (typical values) 25 50 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 180 3.0 IF=I F(AV) Tj=125 °C IF=I F(AV) VFR=1.2 V Tj=125 °C 160 2.5 140 120 2.0 100 1.5 80 60 1.0 40 0.5 20 dIF/dt(A/µs) 0.0 250 300 350 400 450 500 dIF/dt(A/µs) 0 250 300 350 400 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1 MHz VOSC=30 mVRMS Tj=25 °C 100 VR(V) 10 1 4/7 10 100 Doc ID 023613 Rev 1 1000 450 500 STTH61W04S 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 N·m (1.0 N·m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-247 dimensions Dimensions Ref. Millimeters Min. Heat-sink plane A E ∅P S Typ. Inches Max. Min. Typ Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.169 ∅R D L2 L1 b1 L b2 1 2 3 b c A1 e 3 2 1 BACK VIEW L2 P (2) 5.45 5.60 18.50 typ. 0.209 0.215 0.220 0.145 0.728 typ. 3.55 3.65 0.139 0.143 R 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 0.216 0.224 5.50 1. Dimension D plus gate protrusion does not exceed 20.5 mm 2. Resin thickness around the mounting hole is not less than 0.9 mm Doc ID 023613 Rev 1 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Ordering type Marking Package Weight Base qty Delivery mode STTH61W04SW STTH61W04SW TO-247 4.46 g 50 Tube Revision history Table 8. 6/7 STTH61W04S Document revision history Date Revision 05-Oct-2012 1 Changes First issue. Doc ID 023613 Rev 1 STTH61W04S Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 023613 Rev 1 7/7
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