STTH75S12W

STTH75S12 Turbo 2 ultrafast high voltage rectifier Datasheet − production data Description The STTH75S12 is developed using ST’s Turbo 2 1200 V technology. It is well-suited as a boost diode, especially for use in UPS. K Table 1. Device summary A DO-247 K Symbol Value IF(AV) 75 A VRRM 1200 V trr (typ) 40 ns VF (typ) 1.9 V Tj (max) 175 °C Features • Ultrafast switching • Low reverse current • Low thermal resistance • Reduces switching and conduction losses September 2014 This is information on a product in full production. DocID026666 Rev 1 1/8 www.st.com 8 Characteristics 1 STTH75S12 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 1200 V 106 A IF(AV) Average forward current, δ = 0.5 Tc = 80 °C 75 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 370 A Tstg Storage temperature range -65 to +175 °C 175 °C Value Unit 0.35 °C/W Tj Maximum operating junction temperature Table 3. Thermal parameters Symbol Rth(j-c) Parameter Junction to case Table 4. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Min. VR = VRRM Typ. Max. Unit 50 µA 2 mA 0.2 3.2 IF = 75 A V 1.9 2.7 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.8 x IF(AV) + 0.012 IF2(RMS) Table 5. Dynamic characteristics Symbol trr IRM S QRR 2/8 Test conditions Parameter Reverse recovery time Tj = 25 °C IF = 1 A, VR = 30 V, dIF/dt = 200 A/µs Tj = 125 °C IF = 75A, VR = 600 V, dIF/dt = 200 A/µs Reverse recovery current Softness factor Reverse recovery charge Min. Typ. Max. Unit 40 55 ns 26 37 A 1.2 5300 DocID026666 Rev 1 nC STTH75S12 Characteristics Figure 1. Average forward power dissipation versus average forward current IF(A) PF(AV) (W) 300 250 1000.0 δ=1 δ = 0.5 δ = 0.2 200 Figure 2. Forward voltage drop versus forward current (typical values) δ = 0.05 100.0 δ = 0.1 Tj = 150 °C 150 Tj = 25 °C 10.0 100 1.0 T 50 IF(AV) (A) δ = tp/T 0 0 10 20 30 40 50 60 70 VF(V) tp 80 90 100 Figure 3. Forward voltage drop versus forward current (maximum values) 1000.0 0.1 0.0 IF(A) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 100.0 0.7 Tj = 150 °C 0.6 10.0 0.5 Tj = 25 °C 0.4 0.3 1.0 Single pulse 0.2 0.1 VF(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Figure 5. Peak reverse recovery current versus dIF/dt (typical values) 50 IRM(A) 600 20 400 10 200 1.E-01 1.E+00 tRR(ns) IF = I F(AV) VR= 600 V Tj = 125 °C dIF/dt(A/µs) dIF/dt(A/µs) 0 50 1.E-02 800 30 0 1.E-03 Figure 6. Reverse recovery time versus dIF/dt (typical values) 1000 IF = I F(AV) VR= 600 V Tj = 125 °C 40 tP(s) 0.0 1.E-04 100 150 200 250 300 350 400 450 0 500 0 DocID026666 Rev 1 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics STTH75S12 Figure 7. Reverse recovery charges versus dIF/dt (typical values) 10000 Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) SFACTOR QRR(nC) 2.0 IF = I F(AV) VR = 600 V Tj = 125 °C 8000 1.6 6000 1.2 4000 0.8 2000 0.4 IF = I F(AV) VR = 600 V Tj = 125 °C dIF/dt(A/µs) dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 9. Relative variations of dynamic parameters versus junction temperature 1.6 1.4 0 50 100 150 200 250 300 350 400 450 500 Figure 10. Junction capacitance versus reverse voltage applied (typical values) 1000 IF = I F(AV) VR = 600 V Reference: Tj = 125 °C SFACTOR 0.0 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1.2 1.0 0.8 100 IRM 0.6 0.4 QRR 0.2 T j(°C) VR (V) 0.0 25 4/8 50 75 100 125 10 1 DocID026666 Rev 1 10 100 1000 10000 STTH75S12 2 Package information Package information • Epoxy meets UL94, V0 • Cooling method: by conduction (C) • Recommended torque value: 0.4 N·m to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 11. DO-247 dimension definitions V Dia V A H L5 L L2 L4 F2 L3 L1 F3 D V2 F G DocID026666 Rev 1 M E 5/8 Package information STTH75S12 Table 6. DO-247 dimension values Dimensions Ref. Millimeters Min. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 F3 2.00 2.00 G 0.078 2.40 0.078 10.90 0.094 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 L3 18.50 14.20 0.728 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 6/8 Typ. Inches 3.55 3.65 DocID026666 Rev 1 0.139 0.143 STTH75S12 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STTH75S12W STTH75S12W DO-247 4.46 g 50 Tube Revision history Table 8. Document revision history Date Revision 18-Sep-2014 1 Changes Initial release DocID026666 Rev 1 7/8 STTH75S12 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 8/8 DocID026666 Rev 1