STTH802BY-TR

STTH802-Y Automotive ultrafast recovery diode Datasheet  production data Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time ■ High junction temperature ■ AEC-Q101 qualified A K K A NC Description DPAK STTH802BY-TR The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application. October 2012 This is information on a product in full production. Table 1. Doc ID 018563 Rev 2 Device summary IF(AV) 8A VRRM 200 V Tj (max) 175 °C VF (typ) 0.8 V trr (typ) 17 ns 1/7 www.st.com 7 Characteristics STTH802-Y 1 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) Forward rms current 16 A 8 A 100 A IF(AV) Average forward current,  = 0.5 Tc = 145 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range -65 to + 175 °C Operating junction temperature range -40 to + 175 °C Value Unit 3.2 °C/W Tj Table 3. Thermal parameters Symbol Rth(j-c) Table 4. Symbol Parameter Junction to case Static electrical characteristics Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Min. Typ. Max. Unit 6 VR = VRRM µA 6 60 0.95 1.05 0.8 0.90 Typ. Max. Unit IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C 25 30 ns IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C 17 22 Reverse recovery current IF = 8 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125 °C 5.5 7 Forward recovery time IF = 8 A, dIF/dt = 50 A/µs VFR = 1.1 x VFmax, Tj = 25 °C 150 ns Forward recovery voltage IF = 8 A, dIF/dt = 50 A/µs, Tj = 25 °C 1.5 V Tj = 25 °C Tj = 150 °C IF = 8 A V 1. Pulse test: tp = 5 ms,  < 2% 2. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 0.73 x IF(AV) + 0.021 IF2(RMS) Table 5. Dynamic characteristics Symbol Parameter trr IRM tfr VFP 2/7 Reverse recovery time Test conditions Doc ID 018563 Rev 2 Min. A STTH802-Y Figure 1. Characteristics Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) IM(A) IFM(A) 100 200 T IM 180 δd=tp/T 80 tp 160 140 60 120 100 P=5W 80 40 Tj=150°C 60 P=2W P=1W Tj=25°C 40 20 δ 20 VFM(V) 0 0 0.0 0.0 0.1 Figure 3. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.5 1.0 1.5 2.0 2.5 3.0 1.0 Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Zth(j-c)/Rth(j-c) IFM(A) 200 1.0 Single pulse 180 160 140 120 100 80 Tj=150°C 60 40 Tj=25°C 20 VFM(V) tp(s) 0 0.0 Figure 5. 0.5 1.0 1.5 2.0 2.5 3.0 Junction capacitanceversus reverse applied voltage (typical values) 0.1 1.E-03 1.E-02 Figure 6. 1.E-01 1.E+00 Reverse recovery charges versus dIF/dt (typical values) QRR(nC) C(pF) 100 160 F=1MHz Vosc=30mVRMS Tj=25°C IF=8A VR=160V 140 120 100 Tj=125°C 80 60 40 Tj=25°C 20 dIF/dt(A/µs) VR(V) 10 0 1 10 100 1000 10 Doc ID 018563 Rev 2 100 1000 3/7 Characteristics Figure 7. STTH802-Y Reverse recovery time versus dIF/dt Figure 8. (typical values) tRR(ns) Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 80 12 IF=8A VR=160V IF=8A VR=160V 70 10 60 8 50 Tj=125°C 40 Tj=125°C 6 30 4 Tj=25°C 20 2 10 Tj=25°C dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 Figure 9. 1000 Dynamic parameters versus junction temperature 10 100 1000 Figure 10. Thermal resistance, junction to ambient, versus copper surface under tab QRR; IRM [T j] / Q RR; IRM [T j=125°C] Rth(j-a)(°CW) 1.4 100 IF=8A VR=160V 1.2 epoxy printed board copper thickness = 35 µm 90 80 1.0 70 IRM 0.8 60 50 0.6 40 QRR 30 0.4 20 0.2 10 Tj(°C) 0.0 4/7 S(cm²) 0 25 50 75 100 125 150 0 Doc ID 018563 Rev 2 2 4 6 8 10 12 14 16 18 20 STTH802-Y 2 Package information Package information ● Epoxy meets UL94, V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. DPAK dimensions Dimensions Ref. E A B2 C2 Millimeters Inches Min. Max. Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 D R H L4 A1 B G R C A2 0.60 MIN. V2 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Figure 11. Footprint (dimensions in mm) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 Doc ID 018563 Rev 2 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH802BY-TR STTH802Y DPAK 0.3 g 2500 Tape and reel Revision history Table 8. 6/7 STTH802-Y Document revision history Date Revision Changes 10-Mar-2011 1 First issue. 24-Oct-2012 2 Updated operating temperature range in Table 2. Doc ID 018563 Rev 2 STTH802-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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