STTH802CT

® STTH802CT/CB/CFP HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 2 x 4A 200 V 175 °C 0.95 V 20 ns A1 K A2 s s s s Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB K A1 A2 A2 K A1 TO-220AB STTH802CT K TO-220FPAB STTH802CFP DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ =0.5 TO-220AB / TO-220FPAB / DPAK TO-220AB / DPAK TO-220FPAB TO-220AB / DPAK TO-220FPAB IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 155°C Tc = 145°C Tc = 150°C Tc = 130°C K A1 A2 DPAK STTH802CB Value 200 10 Per diode 4 Unit V A A Per device 8 A tp = 10 ms Sinusoidal 50 - 65 + 175 175 A °C °C April 2002 - Ed: 1A 1/8 STTH802/CT/CB/CFP THERMAL PARAMETERS Symbol Rth (j-c) Junction to case Parameter TO-220AB / DPAK TO-220FPAB TO-220AB / DPAK TO-220FPAB Rth (j-c) Coupling TO-220AB / DPAK TO-220FPAB When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% Maximum Per diode 4.0 6.5 Total 2.5 5 1 3.5 Unit °C/W °C/W Min. Typ. Max. 4 Unit µA VR = VRRM 2 IF = 4 A IF = 4 A IF = 8 A IF = 8 A 0.95 0.81 40 1.1 0.95 1.25 1.1 V VF** To evaluate the maximum conduction losses use the following equation : P = 0.80 x IF(AV) + 0.037 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25°C Tj = 25°C Tj = 25°C Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 4 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax IF = 4 A dIF/dt = 100 A/µs Min. Typ. 13 50 2.4 Max. 20 Unit ns ns V 2/8 STTH802/CT/CB/CFP Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Peak current versus form factor (per diode). IM(A) 60 T 50 4 P = 5W δ=1 δ=tp/T tp 40 3 30 2 20 1 T P = 10W 10 IF(av)(A) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 δ=tp/T 4.0 4.5 tp P = 2W δ 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 5.0 0 0.0 0.1 Fig. 3: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Tj=125°C Typical values Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, DPAK). Zth(j-c) / Rth(j-c) 1.0 δ = 0.5 10.0 Tj=125°C Maximum values δ = 0.2 Tj=25°C Maximum values δ = 0.1 1.0 Single pulse T VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 tp(s) 0.1 1.E-03 1.E-02 1.E-01 δ=tp/T tp 1.E+00 Fig. 4-2: Relative variation of thermal impedance junction to case versus duration (TO-220FPAB). Zth(j-c) / Rth(j-c) 1.0 δ = 0.5 Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB, DPAK). IM(A) 70 60 δ = 0.2 δ = 0.1 50 40 Tc=25°C Tc=75°C 0.1 Single pulse 30 20 10 IM t Tc=125°C T tp(s) 0.0 1.E-03 1.E-02 1.E-01 δ=tp/T 1.E+00 tp δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 1.E+01 0 1.E-03 3/8 STTH802/CT/CB/CFP Fig. 5-2: Non repetitive surge peak forward current versus overload duration per diode (TO-220FPAB). IM(A) 60 5.0 4.5 Rth(j-a)=Rth(j-c) TO-220AB/DPAK Fig. 6: Average forward current versus ambient temperature ( δ = 0.5, per diode). IF(av)(A) 50 4.0 40 Tc=25°C 3.5 3.0 2.5 Tc=75°C TO-220FPAB 30 2.0 1.5 1.0 DPAK (S=0.5cm²) Rth(j-a)=70°C:W 20 Tc=125°C IM t 10 δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 0.5 0.0 0 25 50 Tamb(°C) 75 100 125 150 175 0 1.E-03 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 100 F=1MHz Vosc=30mVRMS Tj=25°C Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence, per diode). QRR(nC) 1000 IF=4A VR=200V Tj=125°C 100 VR(V) 10 1 10 100 1000 dIF/dt(A/µs) 10 10 100 1000 Fig. 9: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 100.0 IF=4A VR=200V Tj=125°C Fig. 10: Dynamic parameters versus junction temperature. QRR; IRM [Tj] / QRR; IRM [Tj = 125°C] 1.4 1.2 1.0 IF=4A VR=200V 10.0 0.8 0.6 IRM 1.0 0.4 0.2 QRR dIF/dt(A/µs) 0.1 10 100 1000 Tj(°C) 0.0 0 25 50 75 100 125 150 4/8 STTH802CT/CB/CFP Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) for DPAK. Rth(j-a)(°CW) 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 S(cm²) PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 5/8 STTH802CT/CB/CFP PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 0° Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8° Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.023 0° Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8° 0.80 typ. 0.031 typ. FOOTPRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/8 STTH802/CT/CB/CFP PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS REF. A A H B Millimeters Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15.9 9.00 3.00 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 30.6 10.6 3.6 16.4 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 1.126 0.386 0.114 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.142 0.646 0.366 0.126 B D E Dia L6 L2 L3 L5 D F1 L4 F2 L7 F F1 F2 G G1 H L2 L3 L4 E 16 Typ. 0.63 Typ. F G1 G L5 L6 L7 Dia. Ordering code STTH802CT STTH802CB STTH802CB-TR STTH802CFP s s Marking STTH802CT STTH802CB STTH802CB STTH802CFP Package TO-220AB DPAK DPAK TO-220FPAB Weight 2.23 g 0.3 g 0.3 g 2.0 g Base qty 50 75 2500 50 Delivery mode Tube Tube Tape & reel Tube s s s s Cooling method: by conduction (method C) Recommended torque value (TO-220AB): 0.8 N.m Maximum torque value (TO-220AB): 1.0 N.m Recommended torque value (TO-220FPAB): 0.55 N.m Maximum torque value (TO-220FPAB): 0.7 N.m Epoxy meets UL 94,V0 7/8 STTH802CT/CB/CFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8