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STTH810GY-TR

STTH810GY-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO263

  • 描述:

    DIODE GEN PURP 1KV 8A D2PAK

  • 数据手册
  • 价格&库存
STTH810GY-TR 数据手册
STTH810-Y Automotive ultrafast recovery - high voltage diode Datasheet  production data Features AEC-Q101 qualified ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature K A ■ K A NC D2PAK STTH810GY Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Table 1. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. Device summary IF(AV) 8A VRRM 1000 V Tj 175 °C VF (typ) 1.30 V trr (typ) 47 ns The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. October 2012 This is information on a product in full production. Doc ID 018922 Rev 1 1/8 www.st.com 8 Characteristics STTH810-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 1000 V 30 A 8 A IF(AV) Average forward current,  = 0.5 IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 100 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 60 A Tstg Storage temperature range -65 to + 175 °C Operating junction temperature range -40 to +175 °C Tj Table 3. Thermal parameters Symbol Rth(j-c) Table 4. Symbol IR(1) Tc = 130 °C Parameter Value Unit 2.5 °C/W Junction to case Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Min. Typ. Forward voltage drop Tj = 100 °C µA 2 20 2 IF = 8 A Tj = 150 °C 1. Pulse test: tp = 5 ms,  < 2% 2. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.05 IF2(RMS) 2/8 Unit 5 VR = VRRM Tj = 25 °C VF(2) Max. Doc ID 018922 Rev 1 1.4 1.8 1.3 1.7 V STTH810-Y Characteristics Table 5. Dynamic characteristics Symbol Parameter Test conditions Typ. Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C 64 85 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C 47 65 Reverse recovery current IF = 8 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125 °C 12 16 A S Softness factor IF = 8 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125 °C 2 tfr Forward recovery time dIF/dt = 50 A/µs IF = 8 A VFR = 1.5 x VFmax, Tj = 25 °C 300 ns Forward recovery voltage IF = 8 A, dIF/dt = 50 A/µs, Tj = 25 °C trr Reverse recovery time IRM VFP Figure 1. Conduction losses versus average current Figure 2. Unit ns 5.5 V Forward voltage drop versus forward current IFM(A) P(W) 18 80 =0.1 =0.05 =1 =0.5 =0.2 16 70 14 Tj=150°C (Maximum values) 60 12 50 Tj=150°C (Typical values) 10 Tj=25°C (Maximum values) 40 8 30 6 20 T 4 2 10 IF(AV)(A) 0 0 1 Figure 3. 2 3 4 5 6 7 8 9 10 Relative variation of thermal impedance junction to case versus pulse duration 0 0.0 VFM(V) 0.5 Figure 4. Zth(j-c)/Rth(j-c) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 1.0 0.9 Min. 25 Single pulse VR=600V Tj=125°C 0.8 IF= 2 x IF(AV) 20 0.7 IF= IF(AV) 0.6 15 IF=0.5 x IF(AV) 0.5 10 0.4 0.3 5 0.2 0.1 0.0 1.E-03 dIF/dt(A/µs) tp(s) 1.E-02 1.E-01 0 1.E+00 0 50 Doc ID 018922 Rev 1 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH810-Y Reverse recovery time versus dIF/dt Figure 6. (typical values) Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) trr(ns) 500 2.5 VR=600V Tj=125°C 450 400 VR=600V Tj=125°C IF= 2 x IF(AV) 2.0 IF= 2 x IF(AV) 350 300 1.5 IF= IF(AV ) IF= IF(AV) 250 200 1.0 IF=0.5 x IF(AV) 150 100 0.5 IF=0.5 x IF(AV) 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0.0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature S factor 2.0 3.0 IF = 2 x IF(AV) VR=600V Tj=125°C 1.8 IF = IF(AV) VR=600V Reference: Tj=125°C Sfactor 1.6 2.5 1.4 1.2 1.0 2.0 0.8 IRM 0.6 1.5 0.4 tRR QRR 0.2 dIF/dt(A/µs) 0.0 25 1.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 Tj(°C) 50 75 100 125 500 Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 600 45 IF = IF(AV) Tj=125°C 40 IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 550 35 500 30 450 25 400 20 350 15 300 10 5 250 dIF/dt(A/µs) 0 4/8 dIF/dt(A/µs) 200 0 100 200 300 400 500 0 Doc ID 018922 Rev 1 100 200 300 400 500 STTH810-Y Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values) Figure 12. Thermal resistance junction to ambient versus copper surface under tab Rth(j-a)(°C/W) C(pF) 80 100 F=1MHz Vosc=30mVRMS Tj=25°C Epoxy printed circuit board FR4, copper thickness = 35 µm 70 D²PAK 60 50 10 40 30 20 10 VR(V) 1 SCU(cm²) 0 1 10 100 1000 0 Doc ID 018922 Rev 1 5 10 15 20 25 30 35 40 5/8 Package information 2 STTH810-Y Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 6/8 Doc ID 018922 Rev 1 3.70 0.016 typ. 0° 8° STTH810-Y 3 Ordering information Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH810GY-TR STTH810GY D2PAK 1.48 g 1000 Tape & reel Revision history Table 8. Document revision history Date Revision 24-Oct-2012 1 Changes First issue. Doc ID 018922 Rev 1 7/8 STTH810-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 018922 Rev 1
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