STTH8L02DDJFY-TR

STTH8L02D-Y Automotive ultrafast rectifier Datasheet - production data A1 K1 Description A2 K2 The STTH8L02D-Y is especially suited for switching mode base drive and transistor circuits. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications in automotive functions. Table 1: Device summary Symbol Value IF(AV) 2x4A VRRM 200 V Tj (max.) 175 °C VF (typ.) 0.7 V trr (typ.) 20 ns Features          AEC-Q101 qualified Very low conduction losses Negligible switching losses Low forward voltage High junction temperature ECOPACK®2 compliant component PPAP capable Dual Island package Wettable flanks for automatic visual inspection June 2017 DocID030708 Rev 1 This is information on a product in full production. 1/10 www.st.com Characteristics 1 STTH8L02D-Y Characteristics Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage Tj = -40 °C to +175 °C IF(AV) Average forward current Tc = 160 °C , δ = 0.5 square pulse IF(RMS) Forward rms current Value Unit 200 V 4 A 10 A 75 A IFSM Surge non repetitive forward current Tstg Storage temperature range -65 to +175 °C Maximum operating junction temperature -40 to +175 °C Maximum Unit Tj tp = 10 ms sinusoidal Table 3: Thermal resistance parameters Symbol Rth(j-c) Parameter Junction to case Per diode 4.0 Total 2.0 °C/W Table 4: Static electrical characteristics (per diode) Symbol Parameter IR(1) Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C VF(2) Forward voltage drop IF = 4 A Min. - 20 1 - 0.85 Tj = 25 °C IF = 8 A 2 - - Tj = 150 °C Max. 3 - Tj = 150 °C Tj = 125 °C Typ. 0.7 1.1 - 0.81 Unit µA V 0.97 0.81 0.93 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.70 x IF(AV) + 0.030 x IF2(RMS) For more information, please refer to the following application notes related to the power losses:   2/10 AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DocID030708 Rev 1 STTH8L02D-Y Characteristics Table 5: Dynamic electrical characteristics per diode (Tj = 25 °C, unless otherwise specified) Symbol trr Parameters Reverse recovery time IRM Reverse recovery current Qrr Reverse recovery charge Test conditions Min. IF = 1 A dIF/dt = -50 A/μs VR = 30 V - IF = 1 A dIF/dt = -100 A/μs VR = 30 V - IF = 4 A dIF/dt = -200 A/μs VR = 160 V Tj = 125 °C DocID030708 Rev 1 Typ. Max. Unit 40 ns 20 28 35 - 6.8 - 110 8.5 A nC 3/10 Characteristics 1.1 STTH8L02D-Y Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (typical values, per diode) IFM (A) P F(AV)(W) 1.0E+02 5 δ = 0.1 δ = 0.05 4 δ = 0.2 δ = 0.5 1.0E+01 Tj=150°C Tj=25°C δ= 1 3 1.0E+00 2 T 1.0E-01 1 δ=tp/T IF(AV) (A) tp VFM (V) 0 0 1 2 3 4 5 1.0E-02 0.0 Figure 3: Forward voltage drop versus forward current (maximum values, per diode) 0.5 1.0 1.5 2.0 Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) IFM (A) C(pF) 1.0E+02 100 F=1MHz V OSC=30mV RMS T j=25°C 1.0E+01 Tj=150°C Tj=25°C 1.0E+00 1.0E-01 V R (V) VFM (V) 10 1.0E-02 0.0 1 0.5 1.0 1.5 2.0 10 100 1000 2.5 Figure 5: Reverse recovery charges versus dIF / dt (typical values, per diode) Figure 6: Reverse recovery time versus dIF / dt (typical values, per diode) t rr (ns) 80 IF = 4 A VR = 160 V 70 60 Tj = 125 °C 50 40 30 Tj = 25 °C 20 10 dI F/dt(A/µs) 0 10 4/10 DocID030708 Rev 1 100 1000 STTH8L02D-Y Characteristics Figure 7: Peak reverse recovery current versus dIF / dt (typical values, per diode) Figure 8: Dynamic parameters versus junction temperature (per diode) QRR; IRM[Tj] / QRR; IRM[Tj = 125 °C] IRM(A) 1.4 16 IF = 4 A VR = 160 V IF =4A VR =160V 1.2 Tj = 125 °C 12 1.0 IRM 0.8 8 0.6 Tj = 25 °C QRR 0.4 4 0.2 Tj(°C) dI F/dt(A/µs) 0 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Relative variation of thermal impedance junction to case total versus pulse duration Z th(j-c) / R th(j-c) 1.0 0.9 25 100 125 150 Rth(j-a) (°C/W) PowerFLAT 5x6 Dual Island printed circuit board FR4, copper thickness: 35 µm 100 0.8 75 Figure 10: Thermal resistance junction to ambient total versus copper surface under each tab (typical values) 120 Single pulse 50 0.7 80 0.6 0.5 60 0.4 40 0.3 0.2 20 0.1 tp(s) SCu(cm²) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 DocID030708 Rev 1 0 1 2 3 4 5 6 7 8 9 5/10 10 Package information 2 STTH8L02D-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 PowerFLAT5x6 dual pad package information Figure 11: PowerFLAT™ 5x6 dual pad package outline Bottom view Top view Side view 6/10 DocID030708 Rev 1 STTH8L02D-Y Package information Table 6: PowerFLAT™ 5x6 dual pad package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 0.80 1.00 0.0315 0.0394 A1 0.02 0.05 0.0008 0.0020 0.25 A2 b 0.30 0.0098 0.50 0.0118 0.0197 C 5.80 6.00 0.2283 0.2362 0.2402 D 5.00 5.20 5.40 0.1969 0.2047 0.2126 D2 4.15 4.45 0.1634 D3 4.05 4.20 4.35 0.1594 0.1654 0.1713 D4 4.80 5.00 5.10 0.1890 0.1969 0.2008 D5 0.25 0.40 0.55 0.0098 0.0157 0.0217 D6 0.15 0.30 0.45 0.0059 0.0118 0.0177 D7 1.68 1.98 0.0661 6.10 1.27 e E 6.20 E2 6.40 0.1752 0.0780 0.0500 0.2520 6.60 0.2441 3.50 3.70 0.1378 0.1457 E3 2.35 2.55 0.0925 0.1004 E4 0.40 0.60 0.0157 0.0236 E5 0.08 0.28 0.031 0.0110 E6 0.20 0.325 0.45 0.0079 0.0128 0.0177 E7 0.85 1.00 1.15 0.0335 0.0394 0.0453 E8 0.55 0.75 0.0217 E9 4.00 4.20 4.40 0.1575 0.1654 0.1732 E10 3.55 3.70 3.85 0.1398 0.1457 0.1516 K 1.05 1.35 0.0502 L 0.90 1.00 1.10 0.0285 0.0325 0.0364 L1 0.175 0.275 0.375 0.0069 0.0108 0.0148 Ɵ 0° 12° 0° DocID030708 Rev 1 0.2598 0.0295 0.0620 12° 7/10 Package information STTH8L02D-Y Figure 12: PowerFLAT™ 5x6 dual pad recommended footprint 8/10 DocID030708 Rev 1 STTH8L02D-Y 3 Ordering information Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH8L02DDJFY-TR TH8L 02DY PowerFLAT™ 5x6 dual Island 0.095 g 3000 Tape and reel Revision history Table 8: Document revision history Date 09-Jun-2017 Revision 1 Changes First issue DocID030708 Rev 1 9/10 STTH8L02D-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 10/10 DocID030708 Rev 1