STU10NC70Z

N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU10NC70Z STU10NC70ZI s s s s s s STU10NC70Z STU10NC70ZI VDSS 700 V 700 V RDS(on) ID(on) x RDS(on)max, ID =5.3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 13 3550 250 30 Max. Unit S pF pF pF 2/10 STU10NC70Z/STU10NC70ZI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 350V, ID = 5.3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 10.6 A, VGS = 10V Min. Typ. 34 12 72 19 24 100 Max. Unit ns ns nC nC nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 560V, ID = 10.6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 34 36 80 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 9.4 A, VGS = 0 ISD = 10.6 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 660 8.7 26 Test Conditions Min. Typ. Max. 9.4 37.6 1.6 Unit A A V ns µC A GATE-SOURCE ZENER DIODE Symbol BVGSO αT Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± 1mA (Open Drain) T=25°C Note(3) IGS = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/°C Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU10NC70Z/STU10NC70ZI Safe Operating Area For Max220 Safe Operating Area For I-Max220 Thermal Impedance For Max220 Thermal Impedance For I-Max220 Output Characteristics Transfer Characteristics 4/10 STU10NC70Z/STU10NC70ZI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 STU10NC70Z/STU10NC70ZI Source-drain Diode Forward Characteristics 6/10 STU10NC70Z/STU10NC70ZI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STU10NC70Z/STU10NC70ZI Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 A A2 C D b1 b2 E b e L1 L A1 P011R 8/10 STU10NC70Z/STU10NC70ZI I-Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.6 1.95 0.7 1.25 1.2 0.45 15.9 12.5 0.6 1.75 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.75 2.15 0.93 1.4 1.38 0.6 16.3 12.9 1 2.15 2.64 10.35 13.6 3.4 MIN. 0.169 0.102 0.077 0.027 0.049 0.047 0.017 0.626 0.492 0.023 0.069 0.096 0.396 0.520 0.118 inch TYP. MAX. 0.181 0.108 0.084 0.036 0.055 0.054 0.023 0.641 0.508 0.039 0.084 0.104 0.407 0.535 0.133 P011S 9/10 STU10NC70Z/STU10NC70ZI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10