STU11NM60ND

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Type STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND VDSS (@Tjmax) RDS(on) max 650 V 650 V 650 V 650 V 650 V < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω ID 10 A 10 A(1) 10 A 10 A 10 A 3 1 3 12 DPAK 3 2 1 I²PAK IPAK 3 1 2 1 2 3 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Marking 11NM60ND 11NM60ND 11NM60ND 11NM60ND 11NM60ND Rev 1 Package DPAK TO-220FP I 2PAK Order codes STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND April 2008 Packaging Tape and reel Tube Tube Tube Tube 1/18 www.st.com 18 TO-220 IPAK Contents STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter DPAK/I²PAK TO220/IPAK 600 ± 25 10 6.3 40 90 40 --55 to 150 150 2500 10 (1) 6.3(1) 40 (1) 25 Unit TO-220FP V V A A A W V/ns V °C °C VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Storage temperature Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter TO-220 I²PAK DPAK IPAK TO-220FP Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes -300 62.5 -Unit Rthj-case Rthj-amb Rthj-pcb Tl 1.38 -50 100 -- 5 62.5 -- °C/W °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive(1) Single pulse avalanche energy (2) Max value 3.5 200 Unit A mJ 1. Pulse width limited by Tj max 2. starting Tj= 25 °C, ID=IAS, VDD= 50 V 3/18 Electrical characteristics STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 480 V,ID = 10 A, VGS = 10 V VDS = max rating, VDS = max rating,@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 5 A 3 4 0.37 Min. 600 45 1 100 100 5 0.45 Typ. Max. Unit V V/ns µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) 1. Value measured at turn off under inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 7.5 850 44 5 130 Max. Unit S pF pF pF pF VGS = 0, VDS = 0V to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 480 V, ID = 10 A VGS = 10 V (see Figure 19) Rg 3.7 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 30 4 16 Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min Typ 16 7 50 9 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM 2. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VGS=0 ISD =10 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) VDD = 100 V di/dt =100 A/µs, ISD = 10 A Tj = 150 °C (see Figure 20) 130 0.69 11 200 1.2 12 Test conditions Min Typ Max 10 40 1.3 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / I²PAK Figure 3. Thermal impedance for TO-220 / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK / IPAK Figure 7. Thermal impedance for DPAK / IPAK 6/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Figure 15. Normalized on resistance vs temperature Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Test circuits 3 Test circuits Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/18 Package mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 L2 L5 E 123 L4 7012510-I 12/18 G STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data I²PAK (TO-262) mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 15/18 Packaging mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Revision history 6 Revision history Table 9. Date 23-Apr-2008 Document revision history Revision 1 First release Changes 17/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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