STU16N60M2

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code STP16N60M2 STU16N60M2 TAB IPAK TO-220 12 1 2 VDS RDS(on) max. ID 600 V 0.32 Ω 12 A 3 3 • • • • Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications • Figure 1: Internal schematic diagram D(2, TAB) Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. G(1) S(3) AM15572v1_tab Table 1: Device summary Order code STP16N60M2 STU16N60M2 March 2015 Marking 16N60M2 DocID027198 Rev 1 This is information on a product in full production. Package TO-220 IPAK Packaging Tube 1/16 www.st.com Contents STP16N60M2, STU16N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 5 2/16 4.1 TO-220 type A package information................................................ 11 4.2 IPAK (TO-251) Type A package information ................................... 13 Revision history ............................................................................ 15 DocID027198 Rev 1 STP16N60M2, STU16N60M2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C Gate-source voltage 12 A ID Drain current (continuous) at TC= 100 °C 7.6 A (1) IDM Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 110 W (2) Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C dv/dt dv/dt . Tstg Tj Storage temperature Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 480 V Table 3: Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. IPAK 1.14 62.5 °C/W 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 2.9 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ DocID027198 Rev 1 3/16 Electrical characteristics 2 STP16N60M2, STU16N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA ±10 µA 3 4 V 0.28 0.32 Ω Min. Typ. Max. Unit - 700 - pF - 38 - pF - 1.2 - pF IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 6 A 2 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 V to 480 V, VGS = 0 V - 140 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.3 - Ω - 19 - nC - 3.3 - nC - 9.5 - nC Coss eq. (1) Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 12 A, VGS = 10 V (see Figure 17: "Gate charge test circuit") Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 6 A RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Switching times test circuit for resistive load" and Figure 21: "Switching time waveform") DocID027198 Rev 1 Min. Typ. Max. Unit - 10.5 - ns - 9.5 - ns - 58 - ns - 18.5 - ns STP16N60M2, STU16N60M2 Electrical characteristics Table 8: Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 12 A (1) Source-drain current (pulsed) - 48 A (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.6 V trr Reverse recovery time - 316 ns Qrr Reverse recovery charge - 3.25 µC IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 20.5 A - 454 ns - 4.8 µC - 21 A ISDM VSD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") Notes: (1) (2) Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027198 Rev 1 5/16 Electrical characteristics 2.1 STP16N60M2, STU16N60M2 Electrical characteristics (curves) Figure 2: TO-220 safe operating area Figure 3: TO-220 thermal impedance CG20930 K δ = 0.5 δ = 0.2 δ = 0.1 10-1 Z Zthth == kk R Rthj-C thj-C δδ == ttp // Ƭ Ƭ p δ = 0.05 δ = 0.02 δ = 0.01 tp SINGLE PULSE 10-2 10-5 Figure 4: IPAK safe operating area 10-4 10-3 10-2 ƬƬ 10-1 tp(s) Figure 5: IPAK thermal impedance GC20460 K 100 δ = 0.5 δ = 0.2 Zth = KRthj-c δ = tp / Ƭ δ = 0.1 10-1 10-2 10-5 Figure 6: Output characteristics 6/16 DocID027198 Rev 1 δ = 0.05 δ = 0.02 δ = 0.01 tp SINGLE PULSE -4 10 -3 10 2 10 Ƭ 101 Tp(s) Figure 7: Transfer characteristics STP16N60M2, STU16N60M2 Electrical characteristics Figure 8: Normalized gate threshold voltage vs. temperature Figure 9: Normalized V(BR)DSS vs. temperature Figure 10: Static drain-source on-resistance Figure 11: Normalized on-resistance vs. temperature Figure 12: Gate charge vs. gate-source voltage Figure 13: Capacitance variations DocID027198 Rev 1 7/16 Electrical characteristics STP16N60M2, STU16N60M2 Figure 14: Output capacitance stored energy 8/16 DocID027198 Rev 1 Figure 15: Source- drain diode forward characteristics STP16N60M2, STU16N60M2 3 Test circuits Test circuits Figure 16: Switching times test circuit for resistive load Figure 17: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω 1 kΩ PW AM01469v 1 Figure 18: Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B Figure 19: Unclamped inductive load test circuit A D G S 25 Ω L=100 µH 3.3 µF B 1000 µF D G RG VDD D.U.T. S AM01470v1 Figure 21: Switching time waveform Figure 20: Unclamped inductive waveform t on V(BR)DSS t d(on) toff tr t d(off) tf VD 90% 90% I DM 10% 0 ID VDD 10% VDD AM01472v 1 VGS 0 DocID027198 Rev 1 10% VDS 90% AM01473v 1 9/16 Package mechanical data 4 STP16N60M2, STU16N60M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 10/16 DocID027198 Rev 1 STP16N60M2, STU16N60M2 4.1 Package mechanical data TO-220 type A package information Figure 22: TO-220 type A package outline DocID027198 Rev 1 11/16 Package mechanical data STP16N60M2, STU16N60M2 Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/16 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027198 Rev 1 STP16N60M2, STU16N60M2 4.2 Package mechanical data IPAK (TO-251) Type A package information Figure 23: IPAK (TO-251) type A drawing DocID027198 Rev 1 13/16 Package mechanical data STP16N60M2, STU16N60M2 Table 10: IPAK (TO-251) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 14/16 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID027198 Rev 1 1.00 STP16N60M2, STU16N60M2 5 Revision history Revision history Table 11: Document revision history Date Revision 11-Mar-2015 1 DocID027198 Rev 1 Changes Initial release. 15/16 STP16N60M2, STU16N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID027198 Rev 1