STU16N65M2

STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet − production data Features 7$% 7$%       Order code VDS @ TJmax RDS(on) max ID STP16N65M2 710 V 0.36 Ω 11 A STU16N65M2 710 V 0.36 Ω 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested 72 • Zener-protected ,3$. Applications Figure 1. Internal schematic diagram , TAB • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STP16N65M2 16N65M2 TO-220 Tube STU16N65M2 16N65M2 IPAK Tube October 2014 This is information on a product in full production. DocID027086 Rev 1 1/16 www.st.com Contents STP16N65M2, STU16N65M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/16 .............................................. 9 4.1 TO-220, STP16N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 IPAK, STU16N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID027086 Rev 1 STP16N65M2, STU16N65M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC = 100 °C 6.9 A IDM (1) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V (BR)DSS, VDD=400 V. 3. VDS ≤ 520 V Table 3. Thermal data Value Symbol TO-220 Rthj-case Rthj-amb Unit Parameter Thermal resistance junction-case max Thermal resistance junction-amb max(1) IPAK 1.14 62.50 °C/W 100 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.9 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 360 mJ DocID027086 Rev 1 3/16 16 Electrical characteristics 2 STP16N65M2, STU16N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 650 V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ±10 µA 3 4 V 0.32 0.36 Ω Min. Typ. Max. Unit - 718 - pF - 32 - pF - 1.1 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 5.5 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0 to 520 V - 189 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.2 - Ω Qg Total gate charge - 19.5 - nC - 4 - nC - 8.3 - nC Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 100 V, f = 1 MHz VDD = 520 V, ID = 11 A, VGS = 10 V (see Figure 17) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 DocID027086 Rev 1 STP16N65M2, STU16N65M2 Electrical characteristics Table 7. Switching times Symbol td(on) Parameter Test conditions td(off) tf Typ. Max. Unit - 11.3 - ns - 8.2 - ns - 36 - ns - 11.3 - ns Turn-on delay time VDD = 325 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and 21) Rise time tr Min. Turn-off delay time Fall time Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 11 A ISDM (1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage - 1.6 V ISD trr VGS = 0, ISD = 11 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) ISD = 11 A, di/dt = 100 A/µs VDD = 60 V, Tj=150 °C (see Figure 18) - 342 ns - 3.5 µC - 20.4 A - 458 ns - 4.6 µC - 20.5 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027086 Rev 1 5/16 16 Electrical characteristics 2.1 STP16N65M2, STU16N65M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 *,3')65 ,' $ LV HD  DU 6RQ  ' LV WK 5 LQ D[ Q LR E\P W UD G SH WH 2 LPL /  —V —V PV  PV 7M ƒ& 7F ƒ& 6LQJOHSXOVH      9'69 Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK GIPD221020141405FSR ID (A) 10 s hi ar ea 10µs is DS (o n) R t in ax n m tio by a r d pe te O imi L 100µs 1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics *,3')65 ,' $ 9*6 9  Figure 7. Transfer characteristics     9 9'6 9       *,3')65 ,' $  9  6/16 Figure 3. Thermal impedance for TO-220  9    9'69   DocID027086 Rev 1     9*69 STP16N65M2, STU16N65M2 Electrical characteristics Figure 8. Normalized gate threshold voltage vs. temperature GIPD180920141442FSR VGS(th) (norm) ID = 250 µA 1.1 Figure 9. Normalized V(BR)DSS vs. temperature 1.08 1.0 1.04 0.9 1.00 0.8 0.96 0.7 0.92 0.6 -75 -25 25 75 125 Tj(°C) Figure 10. Static drain-source on-resistance *,3')65 5'6RQ ȍ 9*6 9 0.88 -75 ID= 1mA -25 75 25 125 Tj(°C) Figure 11. Normalized on-resistance vs. temperature GIPD180920141459FSR RDS(on) (norm) 2.2  GIPD180920141448FSR V(BR)DSS (norm) VGS= 10V 1.8  1.4  1  0.6        ,'$ Figure 12. Gate charge vs. gate-source voltage 9*6 9 *,3')65 9'6 9 9'6 9'' 9 ,' $         0.2 -75 -25 75 25 125 Tj(°C) Figure 13. Capacitance variations *,3')65 & S) &LVV   &RVV  &UVV           4JQ&    DocID027086 Rev 1    9'69 7/16 16 Electrical characteristics STP16N65M2, STU16N65M2 Figure 14. Output capacitance stored energy *,3')65 ( —- Figure 15. Source-drain diode forward characteristics *,3')65 96' 9   7M ƒ&    7M ƒ&      8/16 7M ƒ&          9'69  DocID027086 Rev 1       ,6'$ STP16N65M2, STU16N65M2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID027086 Rev 1 10% AM01473v1 9/16 16 Package mechanical data 4 STP16N65M2, STU16N65M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID027086 Rev 1 STP16N65M2, STU16N65M2 4.1 Package mechanical data TO-220, STP16N65M2 Figure 22. TO-220 type A drawing BW\SH$B5HYB7 DocID027086 Rev 1 11/16 16 Package mechanical data STP16N65M2, STU16N65M2 Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/16 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027086 Rev 1 STP16N65M2, STU16N65M2 4.2 Package mechanical data IPAK, STU16N65M2 Figure 23. IPAK (TO-251) type A drawing 0068771_L DocID027086 Rev 1 13/16 16 Package mechanical data STP16N65M2, STU16N65M2 Table 10. IPAK (TO-251) type A mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 14/16 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID027086 Rev 1 1.00 STP16N65M2, STU16N65M2 5 Revision history Revision history Table 11. Document revision history Date Revision 24-Oct-2014 1 Changes First release. DocID027086 Rev 1 15/16 16 STP16N65M2, STU16N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 16/16 DocID027086 Rev 1