STU3N62K3

STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features Type STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 VDSS 620 V 620 V 620 V 620 V 620 V RDS(on) max < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω ID 2.7 A 2.7 A 2.7 A(1) 2.7 A 2.7 A Pw 1 3 2 1 3 45 W 45 W 20 W 45 W 45 W IPAK 3 1 DPAK D²PAK 3 1 2 1 2 3 1. Limited by package ■ ■ ■ ■ ■ 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. Device summary Order codes STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 July 2008 Marking 6N62K3 6N62K3 6N62K3 6N62K3 6N62K3 Rev 1 Package D²PAK DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tape and reel Tube Tube Tube 1/19 www.st.com 19 Contents STB/D/F/P/U3N62K3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STB/D/F/P/U3N62K3 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220 D²PAK DPAK IPAK 620 ± 30 2.7 1.7 10.8 45 0.36 2500 9 --55 to 150 150 2500 2.7 (1) Unit TO-220FP V V A A A W W/°C V V/ns V °C °C VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor 1.7 (1) 10.8(1) 20 0.16 PTOT VESD(G-S) dv/dt (3) VISO Tstg Tj Gate source ESD (HBM-C = 100 pF, R = 1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 2.7 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose -62.5 TO-220 D²PAK DPAK IPAK TO-220FP 2.78 50 100 300 -6.25 -62.5 Unit °C/W °C/W °C/W °C Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 2.7 100 Unit A mJ 3/19 Electrical characteristics STB/D/F/P/U3N62K3 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 620 1 50 ± 10 3 3.75 2.2 4.5 2.5 Typ. Max. Unit V µA µA µA V Ω VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 20 V Gate threshold voltage VDS = VGS, ID = 50 µA Static drain-source on resistance VGS = 10 V, ID = 1.4 A Table 6. Symbol gfs (1) Ciss Coss Crss COSS eq(1) RG Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 1.4 A Min. Typ. 2.1 385 55 6 32.3 10 13 2.5 7.5 Max. Unit S pF pF pF pF Ω nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 496 V f = 1 MHz open drain VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 17) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 310 V, ID =1.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Min. Typ. 9 6.8 22 15.6 Max Unit ns ns ns ns 4/19 STB/D/F/P/U3N62K3 Electrical characteristics Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.7 A, VGS = 0 ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) 190 825 9 255 1100 10 Test conditions Min. Typ. Max. Unit 2.7 10.8 1.6 A A V ns nC A ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1 mA (open drain) Min 30 Typ Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/19 Electrical characteristics STB/D/F/P/U3N62K3 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, IPAK, DPAK, D²PAK Figure 3. Thermal impedance for TO-220, IPAK, DPAK, D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/19 STB/D/F/P/U3N62K3 Figure 8. Normalized BVDSS vs temperature Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/19 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB/D/F/P/U3N62K3 Figure 15. Maximum avalanche energy vs temperature 8/19 STB/D/F/P/U3N62K3 Test circuits 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/19 Package mechanical data STB/D/F/P/U3N62K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/19 STB/D/F/P/U3N62K3 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/19 Package mechanical data STB/D/F/P/U3N62K3 TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 E L2 L5 123 L4 7012510-I 12/19 G STB/D/F/P/U3N62K3 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 13/19 Package mechanical data STB/D/F/P/U3N62K3 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/19 STB/D/F/P/U3N62K3 Package mechanical data D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/19 Package mechanical data STB/D/F/P/U3N62K3 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/19 STB/D/F/P/U3N62K3 Package mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 17/19 Revision history STB/D/F/P/U3N62K3 6 Revision history Table 10. Date 10-Jul-2008 Document revision history Revision 1 First release Changes 18/19 STB/D/F/P/U3N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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