STD3N80K5, STF3N80K5,
STP3N80K5, STU3N80K5
N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
60 W
STD3N80K5
STF3N80K5
800 V
3.5 Ω
2.5 A
STP3N80K5
20 W
60 W
STU3N80K5
PTOT
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
STD3N80K5
STF3N80K5
STP3N80K5
3N80K5
STU3N80K5
July 2017
Package
Packing
DPAK
Tape and reel
TO-220FP
TO-220
Tube
IPAK
DocID025000 Rev 4
This is information on a product in full production.
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www.st.com
Contents
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
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4.1
DPAK (TO-252) type A package information................................... 10
4.2
DPAK (TO-252) type E package information................................... 13
4.3
DPAK (TO-252) packing information ............................................... 15
4.4
TO-220FP package information ...................................................... 17
4.5
TO-220 type A package information................................................ 19
4.6
IPAK (TO-251) type A package information .................................... 21
Revision history ............................................................................ 23
DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP
DPAK
VGS
TO-220
IPAK
Unit
Gate-source voltage
±30
V
ID
Drain current (continuous) at
TC = 25 °C
2.5
A
ID
Drain current (continuous) at
TC = 100 °C
1.6
A
ID(1)
Drain current (pulsed)
10
A
PTOT
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS)
from all three leads to external
heat-sink (t = 1 s, TC = 25 °C)
dv/dt(2)
Peak diode recovery voltage slope
4.5
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tj
20
60
60
2.5
Operating junction temperature range
Tstg
60
kV
V/ns
-55 to 150
Storage temperature range
W
°C
Notes:
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area.
≤ 2.5 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.
DS
≤ 640 V.
Table 3: Thermal data
Value
Symbol
Parameter
Unit
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb
(1)
DPAK
TO-220FP
2.08
6.25
Thermal resistance junction-pcb
62.5
TO-220
IPAK
2.08
62.5
°C/W
100
50
°C/W
°C/W
Notes:
(1)When
mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax)
1
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
65
mJ
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Electrical characteristics
2
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
Unit
800
V
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V,
TC = 125 ° C(1)
50
µA
±10
µA
4
5
V
2.8
3.5
Ω
Min.
Typ.
Max.
Unit
-
130
-
pF
-
14
-
pF
-
0.6
-
pF
-
20
-
pF
-
9
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 100 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 1 A
3
Notes:
(1)Defined
by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Co(tr)(1)
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance
energy related
Rg
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
15.5
-
Ω
Qg
Total gate charge
-
9.5
-
nC
Qgs
Gate-source charge
-
1.5
-
nC
Qgd
Gate-drain charge
VDD = 640 V, ID = 2.5 A
VGS= 0 to 10 V
(see Figure 19: "Test circuit
for gate charge behavior")
-
7.5
-
nC
VGS = 0 V, VDS = 0 to 640 V
Notes:
(1)C
o(tr)
is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)C
o(er)
is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to
80% VDSS.
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Electrical characteristics
Table 7: Switching times
Symbol
td(on)
Parameter
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
Test conditions
VDD= 400 V, ID = 1.25 A, RG = 4.7 Ω
VGS = 10 V
(see Figure 18: "Test circuit for
resistive load switching times" and
Figure 23: "Switching time
waveform")
Min.
Typ.
Max.
Unit
-
8.5
-
ns
-
10.5
-
ns
-
20.5
-
ns
-
25
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Source-drain
current
-
2.5
A
ISDM(1)
Source-drain
current (pulsed)
-
10
A
VSD(2)
Forward on voltage
-
1.5
V
ISD
Reverse recovery
time
trr
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 2.5 A, VGS = 0 V
ISD = 2.5 A, di/dt = 100 A/μs,
VDD = 60 V (see Figure 20: "Test
circuit for inductive load switching
and diode recovery times")
ISD = 2.5 A, di/dt = 100 A/μs,
VDD= 60 V, Tj= 150 °C ( see Figure
20: "Test circuit for inductive load
switching and diode recovery times")
-
265
ns
-
1.2
μC
-
9.2
A
-
430
ns
-
1.9
μC
-
8.8
A
Min.
Typ.
Max.
Unit
±30
-
-
V
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 μs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
V(BR)GSO
Gate-source
breakdown voltage
Test conditions
IGS = ±1 mA, ID = 0 A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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Electrical characteristics
2.1
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Electrical characteristics (curves)
Figure 2: Safe operating area for DPAK and IPAK
Figure 3: Thermal impedance for DPAK and IPAK
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-220
Figure 7: Thermal impedance for TO-220
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Electrical characteristics
Figure 8: Output characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source voltage
Figure 11: Static drain-source on-resistance
Figure 12: Capacitance variations
Figure 13: Output capacitance stored energy
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Electrical characteristics
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 14: Normalized gate threshold voltage vs
temperature
Figure 15: Normalized on-resistance vs temperature
Figure 16: Normalized VDS vs temperature
Figure 17: Source-drain diode forward
characteristics
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
3
Test circuits
Test circuits
Figure 18: Test circuit for resistive load
switching times
Figure 19: Test circuit for gate charge
behavior
VDD
RL
IG= CONST
VGS
+
pulse width
2200
μF
100 Ω
D.U.T.
2.7 kΩ
VG
47 kΩ
1 kΩ
AM01469v10
Figure 20: Test circuit for inductive load
switching and diode recovery times
Figure 21: Unclamped inductive load test
circuit
Figure 22: Unclamped inductive waveform
Figure 23: Switching time waveform
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Package information
4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
DPAK (TO-252) type A package information
Figure 24: DPAK (TO-252) type A package outline
10/24
DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Package information
Table 10: DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
5.10
5.25
6.60
1.00
0.20
0°
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 25: DPAK (TO-252) type A recommended footprint (dimensions are in mm)
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.2
Package information
DPAK (TO-252) type E package information
Figure 26: DPAK (TO-252) type E package outline
DocID025000 Rev 4
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 11: DPAK (TO-252) type E mechanical data
mm
Dim.
Min.
A
Typ.
2.18
Max.
2.39
A2
0.13
b
0.65
0.884
b4
4.95
5.46
c
0.46
0.61
c2
0.46
0.60
D
5.97
6.22
D1
5.21
E
6.35
E1
4.32
6.73
e
2.286
e1
4.572
H
9.94
10.34
L
1.50
1.78
L1
L2
2.74
0.89
L4
1.27
1.02
Figure 27: DPAK (TO-252) type E recommended footprint (dimensions are in mm)
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.3
Package information
DPAK (TO-252) packing information
Figure 28: DPAK (TO-252) tape outline
DocID025000 Rev 4
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Figure 29: DPAK (TO-252) reel outline
Table 12: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
16/24
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID025000 Rev 4
18.4
22.4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.4
Package information
TO-220FP package information
Figure 30: TO-220FP package outline
7012510_Rev_12_B
DocID025000 Rev 4
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 13: TO-220FP package mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
18/24
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.5
Package information
TO-220 type A package information
Figure 31: TO-220 type A package outline
DocID025000 Rev 4
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 14: TO-220 type A package mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
D1
20/24
Typ.
15.75
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID025000 Rev 4
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
4.6
Package information
IPAK (TO-251) type A package information
Figure 32: IPAK (TO-251) type A package outline
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Package information
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
Table 15: IPAK (TO-251) type A package mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
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Max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
DocID025000 Rev 4
1.00
STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
5
Revision history
Revision history
Table 16: Document revision history
Date
Revision
Changes
12-Jul-2013
1
First release.
15-Jan-2014
2
– Modified: PTOT and EAS values in Table 2
– Modified: Rthj-case values in Table 3
– Modified: the entire typical values in Table 5 and 6
– Modified: ISD and ISDM max values and typical values in Table 7
– Updated: Table 24 and Table 9
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
17-Jan-2014
3
– Modified: Figure 8 and 9
– Minor text changes
17-Jul-2017
4
Updated Table 7: "Switching times" and Section 4: "Package information".
Minor text changes.
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STD3N80K5, STF3N80K5, STP3N80K5,
STU3N80K5
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