STU65N3LLH5

STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 Ω, 65 A, DPAK, IPAK STripFET™ V Power MOSFET Features ■ Type VDSS RDS(on) max ID STD65N3LLH5 30 V 0.0069 Ω 65 A STU65N3LLH5 30 V 0.0073 Ω 65 A RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 3 3 2 1 DPAK 1 IPAK Application Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. Table 1. Device summary Order code Marking Package Packaging STD65N3LLH5 65N3LLH5 DPAK Tape and reel STU65N3LLH5 65N3LLH5 IPAK Tube May 2011 Doc ID 17281 Rev 1 1/17 www.st.com 17 Contents STD65N3LLH5, STU65N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 8 Doc ID 17281 Rev 1 STD65N3LLH5, STU65N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-source voltage Value Unit 30 V ± 22 V ID Drain current (continuous) at TC = 25 °C 65 A ID Drain current (continuous) at TC = 100 °C 46 A Drain current (pulsed) 260 A Total dissipation at TC = 25 °C 50 W Derating factor 0.3 W/°C IDM (1) PTOT EAS (2) Single pulse avalanche energy TBD mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, Id = 32.5 A, Vdd = 12 V. Table 3. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case max 3 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj Doc ID 17281 Rev 1 3/17 Electrical characteristics 2 STD65N3LLH5, STU65N3LLH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Min. Typ. Max. 30 1 Unit V 1.8 1 10 µA µA ±100 nA 3 V VGS= 10 V, ID= 32.5 A SMD version 0.0061 0.0069 Ω VGS= 10 V, ID= 32.5 A 0.0065 0.0073 Ω VGS= 4.5 V, ID= 32.5 A SMD version 0.0084 0.0093 Ω VGS= 4.5 V, ID= 32.5 A 0.0088 0.0097 Ω Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Rg 4/17 Static Min. Typ. VDS =25 V, f=1 MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 65 A VGS =4.5 V (Figure 14) Intrinsic gate resistance f=1 MHz Gate DC Bias=0 test signal level = 20 mV open drain Doc ID 17281 Rev 1 Max. Unit - 1290 240 32 - pF pF pF - 8 3.6 3.4 - nC nC nC 1.7 Ω STD65N3LLH5, STU65N3LLH5 Table 6. Symbol Electrical characteristics Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=10 V, ID= 65 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 8.6 11.2 - ns ns td(off) tf Turn-off delay time Fall time VDD=10 V, ID= 25 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 32.4 6 - ns ns Min. Typ. Max. Unit - 65 260 A A 1.1 V Table 7. Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage ISD=32.5 A, VGS=0 - trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD=32.5 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) - IRRM Test conditions 22 15 1.4 ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5%. Doc ID 17281 Rev 1 5/17 Electrical characteristics STD65N3LLH5, STU65N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM06486v2 ID (A) ) on D S( 100 O Li per m at ite io d ni by n m this ax a R rea is Tj=150°C Tc=25°C Single pulse 100µs 1ms 10 10ms 1 0.1 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics !-V )$ !  6'36  6        6      Figure 6. 6$36 6    !-V )$ ! 6    Normalized BVDSS vs temperature !-V "6$33 NORM    6$36  Figure 7.     6'36 Static drain-source on resistance AM06491v2 RDS(on) (mΩ) VGS=10V 14 12  10  8 6  4  2   6/17     4* # Doc ID 17281 Rev 1 0 3 5 7 9 11 13 15 17 ID(A) STD65N3LLH5, STU65N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6  6$$6 !-V # P&  )$!  Capacitance variations  #ISS           #OSS         1GN# Figure 10. Normalized gate threshold voltage vs temperature !-V 6'3TH   NORM #RSS   6$36 Figure 11. Normalized on resistance vs temperature !-V 2$3ON NORM            4* #          4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6 4*  #   4* #   4* #           )3$! Doc ID 17281 Rev 1 7/17 Test circuits 3 STD65N3LLH5, STU65N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE L A D G S 3.3 µF B B B VD L=100µH 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/17 0 Doc ID 17281 Rev 1 10% AM01473v1 STD65N3LLH5, STU65N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17281 Rev 1 9/17 Package mechanical data Table 8. STD65N3LLH5, STU65N3LLH5 DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 19. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 10/17 Doc ID 17281 Rev 1 AM08850v1 STD65N3LLH5, STU65N3LLH5 Package mechanical data Figure 20. DPAK (TO-252) drawing 0068772_G Doc ID 17281 Rev 1 11/17 Package mechanical data Table 9. STD65N3LLH5, STU65N3LLH5 IPAK (TO-251) mechanical data mm. Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 12/17 Max. 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 17281 Rev 1 1.00 STD65N3LLH5, STU65N3LLH5 Package mechanical data Figure 21. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 17281 Rev 1 13/17 Packaging mechanical data 5 STD65N3LLH5, STU65N3LLH5 Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/17 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17281 Rev 1 18.4 22.4 STD65N3LLH5, STU65N3LLH5 Packaging mechanical data Figure 22. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 23. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 17281 Rev 1 15/17 Revision history 6 STD65N3LLH5, STU65N3LLH5 Revision history Table 11. 16/17 Document revision history Date Revision 19-May-2011 1 Changes First release. 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