STU6NA100

® STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE STU6NA100 s s V DSS 1000 V R DS(on) < 1.7 Ω ID 6A s s s s s TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD Max220 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature o o Value 1000 1000 ± 30 6 3.9 24 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area June 1998 1/5 STU6NA100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.8 62 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , VDD = 5 0 V) Max Value 6 800 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A VGS = 0 Min. 1000 50 500 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 3 0 V T c = 1 00 C o ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 1 0 V Test Conditions ID = 2 50 µ A ID = 3 A 6 Min. 2.25 Typ. 3 1.45 Max. 3.75 1.7 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz ID = 3 A V GS = 0 Min. 6 Typ. 7 3170 270 76 4100 351 99 Max. Unit S pF pF pF 2/5 STU6NA100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Parameter Turn-on Time Rise Time Test Conditions V DD = 5 00 V 3.5 A R G = 4 .7 Ω V DD = 8 00 V ID = 7 A ID = V GS = 1 0 V V GS = 1 0 V 125 17 58 150 nC nC nC Min. Typ. 28 19 Max. 40 27 Unit ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 8 00 V R G = 4 .7 Ω ID = 7 A V GS = 1 0 V Min. Typ. 35 15 55 Max. 50 21 77 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 d i/dt = 100 A/ µ s T j = 1 50 o C 835 14 33 I SD = 6 A V DD = 1 00 V Test Conditions Min. Typ. Max. 6 24 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STU6NA100 Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 C A A2 D b1 b2 b e E L1 L A1 P011R 4/5 STU6NA100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/5