STU6NF10

STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω 6 A, DPAK, IPAK , low gate charge STripFET™ Power MOSFET Features Type STD6NF10 STU6NF10 ■ ■ VDSS 100 V 100 V RDS(on) max < 0.250 Ω < 0.250 Ω ID 6A 6A 2 1 3 1 3 Exceptional dv/dt capability 100% avalanche tested IPAK DPAK Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Figure 1. Internal schematic diagram Table 1. Device summary Marking D6NF10 6NF10 Package DPAK IPAK Packaging Tape and reel Tube Order codes STD6NF10T4 STU6NF10 November 2008 Rev 6 1/14 www.st.com 14 Contents STD6NF10, STU6NF10 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STD6NF10, STU6NF10 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 100 ± 20 6 4 24 30 0.2 40 200 -65 to 175 Max. operating junction temperature Unit V V A A A W W/°C V/ns mJ °C Ptot dv/dt (2) EAS (3) Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Tstg Tj 2. 1. Pulse width limited by safe operating area. ISD ≤ 6 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V Table 3. Symbol Rthj-case Rthj-amb TJ Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 5 100 300 Unit °C/W °C/W °C 3/14 Electrical characteristics STD6NF10, STU6NF10 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS =0 VDS = max rating VDS =max rating, TC = 125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3 A 2 0.22 Min. 100 1 10 ±100 4 0.25 Typ. Max. Unit V µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) Table 5. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = > ID(on) x RDS(on)max, ID = 3A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 34 280 45 20 6 10 20 3 10 2.5 4 14 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 50 V, ID = 3 A RG = 4.7 Ω, VGS = 10 V (see Figure 13) VDD = 80 V, ID = 6 A, VGS = 10 V, RG = 4.7 Ω (see Figure 14) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14 STD6NF10, STU6NF10 Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 6 A, VGS = 0 70 175 5 Test conditions Min. Typ. Max. 6 24 1.3 Unit A A V ns nC A Reverse recovery time ISD = 6 A, di/dt = 100 A/µs, Reverse recovery charge VDD = 10 V, Tj = 150 °C Reverse recovery current (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14 Electrical characteristics STD6NF10, STU6NF10 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 STD6NF10, STU6NF10 Figure 8. Gate charge vs. gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuits STD6NF10, STU6NF10 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/14 STD6NF10, STU6NF10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD6NF10, STU6NF10 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 10/14 STD6NF10, STU6NF10 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 11/14 Packing mechanical data STD6NF10, STU6NF10 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 STD6NF10, STU6NF10 Revision history 6 Revision history Table 7. Date 21-Jun-2004 20-Jul-2006 16-Sep-2008 19-Nov-2008 Document revision history Revision 3 4 5 6 Complete version New template, no content change Corrected part number: STU6NF10 Marking label in Table 1 for the device in IPAK has been updated. IGSS value in Table 4 has been updated Changes 13/14 STD6NF10, STU6NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14