STU7N65M2

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB TAB IPAK TO-220 12 1 2 3     3 Figure 1: Internal schematic diagram Order code VDS RDS(on) max ID STP7N65M2 650 V 1.15 Ω 5A STU7N65M2 650 V 1.15 Ω 5A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications  Switching applications D(2, TAB) Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. G(1) S(3) AM01476v1_tab Table 1: Device summary Order code Marking Package Packaging STP7N65M2 7N65M2 TO-220 Tube STU7N65M2 7N65M2 IPAK Tube May 2015 DocID026788 Rev 3 This is information on a product in full production. 1/18 www.st.com Contents STP7N65M2, STU7N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/18 4.1 TO-220 type A package information................................................ 11 4.2 IPAK(TO-251) type A package information ..................................... 13 4.3 IPAK (TO-251) type C package information .................................... 15 Revision history ............................................................................ 17 DocID026788 Rev 3 STP7N65M2, STU7N65M2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC = 100 °C 3.2 A (1) IDM Drain current (pulsed) 20 A PTOT W Total dissipation at TC = 25 °C 60 dv/dt (2) Peak diode recovery voltage slope 15 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature Tj V/ns - 55 to 150 Operating junction temperature °C Notes: (1) Pulse width limited by safe operating area (2) ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD=400 V (3) VDS ≤ 520 V Table 3: Thermal data Value Symbol Unit Parameter TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max IPAK 2.08 62.5 °C/W 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) 1 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50 V) 103 mJ DocID026788 Rev 3 3/18 Electrical characteristics 2 STP7N65M2, STU7N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA Gate-body leakage current VDS = 0, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.5 A 0.98 1.15 Ω Min. Typ. Max. Unit - 270 - IDSS Zero gate voltage drain current IGSS 2 Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance Coss Output capacitance Crss Reverse transfer capacitance C (1) oss eq. Equivalent output capacitance RG VDS = 100 V, f = 1 MHz, VGS = 0 - 14.5 - - 0.8 - VDS = 0 to 520 V, VGS = 0 - 108 - pF Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω VDD = 520 V, ID = 5 A, VGS = 10 V (see Figure 17: "Gate charge test circuit") - 9 - nC - 2.3 - nC - 4.3 - nC Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge pF Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf 4/18 Parameter Test conditions VDD = 325 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Switching times test circuit for resistive load"and Figure 21: "Switching time waveform" ) Fall time DocID026788 Rev 3 Min. Typ. Max. Unit - 8 - ns - 20 - ns - 30 - ns - 20 - ns STP7N65M2, STU7N65M2 Electrical characteristics Table 8: Source drain diode Symbol Parameter ISD Source-drain current (1) Source-drain current (pulsed) (2) Forward on voltage ISDM VSD trr Test conditions ISD = 5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21: "Switching time waveform") ISD = 5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21: "Switching time waveform") Min. Typ. Max. Unit - 5 A - 20 A - 1.6 V - 275 ns - 1.62 µC - 11.8 A - 430 ns - 2.54 µC - 11.9 A Notes: (1) (2) Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026788 Rev 3 5/18 Electrical characteristics 2.1 STP7N65M2, STU7N65M2 Electrical characteristics (curves) Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 Figure 4: Safe operating area for IPAK Figure 5: Thermal impedance for IPAK CG34360 K 0 10 c -1 10 -2 10 -5 10 Figure 6: Output characteristics 6/18 DocID026788 Rev 3 -4 10 -3 10 -2 10 -1 10 Figure 7: Transfer characteristics tp (s) STP7N65M2, STU7N65M2 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Output capacitance stored energy Figure 12: Normalized gate threshold voltage vs temperature Figure 13: Normalized on-resistance vs temperature DocID026788 Rev 3 7/18 Electrical characteristics STP7N65M2, STU7N65M2 Figure 14: Source-drain diode forward characteristics 8/18 Figure 15: Normalized V(BR)DSS vs temperature DocID026788 Rev 3 STP7N65M2, STU7N65M2 3 Test circuits Test circuits Figure 16: Switching times test circuit for resistive load Figure 17: Gate charge test circuit Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform DocID026788 Rev 3 9/18 Package information 4 STP7N65M2, STU7N65M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 10/18 DocID026788 Rev 3 STP7N65M2, STU7N65M2 4.1 Package information TO-220 type A package information Figure 22: TO-220 type A package outline DocID026788 Rev 3 11/18 Package information STP7N65M2, STU7N65M2 Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/18 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026788 Rev 3 STP7N65M2, STU7N65M2 4.2 Package information IPAK(TO-251) type A package information Figure 23: IPAK (TO-251) type A package outline DocID026788 Rev 3 13/18 Package information STP7N65M2, STU7N65M2 Table 10: IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 14/18 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID026788 Rev 3 1.00 STP7N65M2, STU7N65M2 4.3 Package information IPAK (TO-251) type C package information Figure 24: IPAK (TO-251) type C package outline 0068771_IK_typeC_rev13 DocID026788 Rev 3 15/18 Package information STP7N65M2, STU7N65M2 Table 11: IPAK (TO-251) type C package mechanical data mm Dim. Min. Typ. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 16/18 Max. 0.90 b4 5.23 5.33 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.90 1.00 1.20 L2 0.90 1.08 1.25 ϑ1 3° 5° 7° ϑ2 1° 3° 5° DocID026788 Rev 3 5.43 STP7N65M2, STU7N65M2 5 Revision history Revision history Table 12: Document revision history Date Revision Changes 07-Aug-2014 1 First release. 09-Oct-2014 2 Added and . Updated not found. Minor text changes. 28-May-2015 3 Document status promoted form preliminary to production data. Updated package information. DocID026788 Rev 3 17/18 STP7N65M2, STU7N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 18/18 DocID026788 Rev 3